Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 29 з 69
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT20GN60SDQ2G | MICROCHIP (MICROSEMI) |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| APT20M11JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT20M11JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M11JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT20M11JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT20M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M11JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced |
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APT20M11JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® |
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| APT20M120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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| APT20M120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® |
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| APT20M120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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| APT20M16B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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| APT20M16B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M16B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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| APT20M16B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M16LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M16LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M18B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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| APT20M18B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M18B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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| APT20M18B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M18LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M18LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M20B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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| APT20M20B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M20B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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| APT20M20B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M20JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 416A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 104A On-state resistance: 20mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT20M20JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 416A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 104A On-state resistance: 20mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M20JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 416A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 104A On-state resistance: 20mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT20M20JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 416A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 104A On-state resistance: 20mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M20LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT20M20LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M20LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT20M20LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M22JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 388A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 97A On-state resistance: 22mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT20M22JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 388A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 97A On-state resistance: 22mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M22JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 388A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 72A On-state resistance: 22mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® |
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| APT20M22JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 388A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 72A On-state resistance: 22mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® кількість в упаковці: 1 шт |
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| APT20M22JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 388A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 72A On-state resistance: 22mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® |
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| APT20M22JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 388A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 72A On-state resistance: 22mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® кількість в упаковці: 1 шт |
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APT20M22LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced |
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APT20M22LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M22LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced |
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APT20M22LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M34BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT20M34BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M34BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT20M34BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M34SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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APT20M34SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M36BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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APT20M36BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M36BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 260A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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| APT20GN60SDQ2G |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| APT20M11JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT20M11JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M11JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT20M11JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M11JVFR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT20M11JVFR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M11JVR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
товар відсутній
| APT20M11JVR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M120JCU2 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
товар відсутній
| APT20M120JCU2 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APT20M120JCU3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
товар відсутній
| APT20M120JCU3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APT20M16B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M16B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M16LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M16LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M18B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M18B2VRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18B2VRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M18LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M18LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M20B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M20B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M20JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT20M20JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M20JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT20M20JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 416A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 104A
On-state resistance: 20mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M20LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M20LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M22JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 97A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 97A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT20M22JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 97A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 97A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M22JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
товар відсутній
| APT20M22JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
товар відсутній
| APT20M22JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
товар відсутній
| APT20M22JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 388A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 22mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
товар відсутній
| APT20M22LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
товар відсутній
| APT20M22LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M22LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
товар відсутній
| APT20M22LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M34BFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
товар відсутній
| APT20M34BFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M34BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
товар відсутній
| APT20M34BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M34SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT20M34SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M36BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT20M36BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT20M36BLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
товар відсутній