Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 27 з 69
| Фото | Назва | Виробник | Інформація |
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| APT12080JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.8Ω Pulsed drain current: 60A Power dissipation: 450W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT12080LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Technology: POWER MOS 5® Mounting: THT Power dissipation: 520W Case: TO264 Polarisation: unipolar Gate charge: 485nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.8Ω Type of transistor: N-MOSFET |
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APT12080LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Technology: POWER MOS 5® Mounting: THT Power dissipation: 520W Case: TO264 Polarisation: unipolar Gate charge: 485nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.8Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT12M80B | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 Case: TO247-3 Drain-source voltage: 800V Drain current: 8A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar Gate charge: 80nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 45A Mounting: THT |
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APT12M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 Case: TO247-3 Drain-source voltage: 800V Drain current: 8A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar Gate charge: 80nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 45A Mounting: THT кількість в упаковці: 1 шт |
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APT13F120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V |
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APT13F120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT13F120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V |
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APT13F120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT13GP120BDQ1G | MICROCHIP (MICROSEMI) |
APT13GP120BDQ1G THT IGBT transistors |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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| APT13GP120BG | MICROCHIP (MICROSEMI) |
APT13GP120BG THT IGBT transistors |
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APT14F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247 Mounting: THT Case: TO247 Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 14A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 980mΩ Gate-source voltage: ±30V |
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APT14F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247 Mounting: THT Case: TO247 Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 14A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 980mΩ Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT14F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 980mΩ Gate-source voltage: ±30V Pulsed drain current: 56A |
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APT14F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 980mΩ Gate-source voltage: ±30V Pulsed drain current: 56A кількість в упаковці: 1 шт |
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APT14M100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V |
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APT14M100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT14M100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V |
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APT14M100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT14M120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A |
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APT14M120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A кількість в упаковці: 1 шт |
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APT14M120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A |
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APT14M120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A кількість в упаковці: 1 шт |
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| APT150GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 99A Pulsed collector current: 450A |
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| APT150GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 99A Pulsed collector current: 450A кількість в упаковці: 1 шт |
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| APT150GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 99A Pulsed collector current: 450A |
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| APT150GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 99A Pulsed collector current: 450A кількість в упаковці: 1 шт |
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APT150GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max Type of transistor: IGBT Collector current: 123A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Kind of package: tube Gate charge: 970nC |
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APT150GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max Type of transistor: IGBT Collector current: 123A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Kind of package: tube Gate charge: 970nC кількість в упаковці: 1 шт |
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| APT150GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Case: SOT227B Pulsed collector current: 450A Collector current: 123A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: Field Stop; Trench Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT150GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Case: SOT227B Pulsed collector current: 450A Collector current: 123A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: Field Stop; Trench Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT150GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Case: SOT227B Pulsed collector current: 450A Collector current: 123A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: Field Stop; Trench Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT150GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Case: SOT227B Pulsed collector current: 450A Collector current: 123A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: Field Stop; Trench Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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APT150GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC |
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APT150GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC кількість в упаковці: 1 шт |
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| APT150GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 90A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw |
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| APT150GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 90A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT15D100BCTG | MICROCHIP (MICROSEMI) |
APT15D100BCTG THT universal diodes |
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APT15D100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 15A Reverse recovery time: 28ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 1.9V |
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APT15D100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 15A Reverse recovery time: 28ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 1.9V кількість в упаковці: 1 шт |
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| APT15D100BHBG | MICROCHIP (MICROSEMI) |
APT15D100BHBG THT universal diodes |
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APT15D100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 1.9V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 28ns |
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APT15D100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 1.9V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 28ns кількість в упаковці: 1 шт |
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APT15D120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 2V |
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APT15D120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 2V кількість в упаковці: 1 шт |
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APT15D120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Technology: FRED Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Reverse recovery time: 32ns Heatsink thickness: 1.14...1.4mm Type of diode: rectifying Max. forward voltage: 2V Load current: 15A |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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APT15D120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Technology: FRED Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Reverse recovery time: 32ns Heatsink thickness: 1.14...1.4mm Type of diode: rectifying Max. forward voltage: 2V Load current: 15A кількість в упаковці: 1 шт |
на замовлення 304 шт: термін постачання 14-21 дні (днів) |
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APT15D40BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 400V Type of diode: rectifying Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Technology: FRED Reverse recovery time: 19ns Max. forward voltage: 1.3V Load current: 15A |
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APT15D40BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 400V Type of diode: rectifying Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Technology: FRED Reverse recovery time: 19ns Max. forward voltage: 1.3V Load current: 15A |
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APT15D40KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns |
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APT15D40KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns кількість в упаковці: 1 шт |
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APT15D60BCAG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED Load current: 15A Semiconductor structure: common anode; double Reverse recovery time: 21ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V |
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APT15D60BCAG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED Load current: 15A Semiconductor structure: common anode; double Reverse recovery time: 21ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V кількість в упаковці: 1 шт |
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| APT15D60BCTG | MICROCHIP (MICROSEMI) |
APT15D60BCTG THT universal diodes |
товар відсутній |
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| APT15D60BG | MICROCHIP (MICROSEMI) |
APT15D60BG THT universal diodes |
товар відсутній |
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APT15D60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns |
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APT15D60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns кількість в упаковці: 1 шт |
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APT15DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V Case: TO247AC Mounting: THT Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 29A Max. forward voltage: 2.5V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 235ns Max. forward impulse current: 80A Type of diode: rectifying |
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APT15DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V Case: TO247AC Mounting: THT Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 29A Max. forward voltage: 2.5V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 235ns Max. forward impulse current: 80A Type of diode: rectifying кількість в упаковці: 1 шт |
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APT15DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED Case: TO247-2 Mounting: THT Application: automotive industry Features of semiconductor devices: fast switching Technology: FRED Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns Type of diode: rectifying |
товар відсутній |
| APT12080JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.8Ω
Pulsed drain current: 60A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.8Ω
Pulsed drain current: 60A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT12080LVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
товар відсутній
| APT12080LVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT12M80B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
Case: TO247-3
Drain-source voltage: 800V
Drain current: 8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 45A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
Case: TO247-3
Drain-source voltage: 800V
Drain current: 8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 45A
Mounting: THT
товар відсутній
| APT12M80B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
Case: TO247-3
Drain-source voltage: 800V
Drain current: 8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 45A
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
Case: TO247-3
Drain-source voltage: 800V
Drain current: 8A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 45A
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| APT13F120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
товар відсутній
| APT13F120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT13F120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
товар відсутній
| APT13F120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT13GP120BDQ1G |
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Виробник: MICROCHIP (MICROSEMI)
APT13GP120BDQ1G THT IGBT transistors
APT13GP120BDQ1G THT IGBT transistors
на замовлення 82 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1048.32 грн |
| 2+ | 674.53 грн |
| 5+ | 638.38 грн |
| APT14F100B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
товар відсутній
| APT14F100B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT14F100S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
товар відсутній
| APT14F100S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
кількість в упаковці: 1 шт
товар відсутній
| APT14M100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
товар відсутній
| APT14M100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT14M100S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
товар відсутній
| APT14M100S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT14M120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
товар відсутній
| APT14M120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
кількість в упаковці: 1 шт
товар відсутній
| APT14M120S |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
товар відсутній
| APT14M120S |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
кількість в упаковці: 1 шт
товар відсутній
| APT150GN120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
товар відсутній
| APT150GN120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
кількість в упаковці: 1 шт
товар відсутній
| APT150GN120JDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
товар відсутній
| APT150GN120JDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 99A
Pulsed collector current: 450A
кількість в упаковці: 1 шт
товар відсутній
| APT150GN60B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
товар відсутній
| APT150GN60B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
кількість в упаковці: 1 шт
товар відсутній
| APT150GN60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT150GN60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT150GN60JDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT150GN60JDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Case: SOT227B
Pulsed collector current: 450A
Collector current: 123A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: Field Stop; Trench
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT150GN60LDQ4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
товар відсутній
| APT150GN60LDQ4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
кількість в упаковці: 1 шт
товар відсутній
| APT150GT120JR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
товар відсутній
| APT150GT120JR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT15D100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
товар відсутній
| APT15D100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
кількість в упаковці: 1 шт
товар відсутній
| APT15D100KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
товар відсутній
| APT15D100KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
кількість в упаковці: 1 шт
товар відсутній
| APT15D120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
товар відсутній
| APT15D120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
| APT15D120KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Reverse recovery time: 32ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2V
Load current: 15A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Reverse recovery time: 32ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2V
Load current: 15A
на замовлення 304 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 182 грн |
| 5+ | 161.65 грн |
| 6+ | 158.71 грн |
| 10+ | 155.04 грн |
| 15+ | 149.9 грн |
| 25+ | 146.96 грн |
| 100+ | 144.02 грн |
| APT15D120KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Reverse recovery time: 32ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2V
Load current: 15A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Technology: FRED
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Reverse recovery time: 32ns
Heatsink thickness: 1.14...1.4mm
Type of diode: rectifying
Max. forward voltage: 2V
Load current: 15A
кількість в упаковці: 1 шт
на замовлення 304 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.4 грн |
| 5+ | 201.44 грн |
| 6+ | 190.46 грн |
| 10+ | 186.05 грн |
| 15+ | 179.87 грн |
| 25+ | 176.35 грн |
| 100+ | 172.82 грн |
| APT15D40BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
товар відсутній
| APT15D40BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
товар відсутній
| APT15D40KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
товар відсутній
| APT15D40KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
кількість в упаковці: 1 шт
товар відсутній
| APT15D60BCAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
товар відсутній
| APT15D60BCAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
кількість в упаковці: 1 шт
товар відсутній
| APT15D60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
товар відсутній
| APT15D60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
кількість в упаковці: 1 шт
товар відсутній
| APT15DQ100BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
товар відсутній
| APT15DQ100BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
кількість в упаковці: 1 шт
товар відсутній
| APT15DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Case: TO247-2
Mounting: THT
Application: automotive industry
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Case: TO247-2
Mounting: THT
Application: automotive industry
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Type of diode: rectifying
товар відсутній