Технічний опис APT20M18B2VRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 625W, Case: TO247MAX, Gate-source voltage: ±30V, On-state resistance: 18mΩ, Mounting: THT, Gate charge: 330nC, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT20M18B2VRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT20M18B2VRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
| APT20M18B2VRG | Виробник : Microsemi | MOSFET Power MOSFET - MOS5 |
товар відсутній |
||
| APT20M18B2VRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
товар відсутній |