Технічний опис APT20M16B2FLLG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W, Type of transistor: N-MOSFET, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 694W, Case: TO247MAX, Gate-source voltage: ±30V, On-state resistance: 16mΩ, Mounting: THT, Gate charge: 0.14µC, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT20M16B2FLLG
| Фото | Назва | Виробник | Інформація |
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| APT20M16B2FLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT20M16B2FLLG | Виробник : Microsemi | MOSFET Power FREDFET - MOS7 |
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| APT20M16B2FLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
товар відсутній |