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APT20M34BLLG MICROCHIP (MICROSEMI)
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис APT20M34BLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 200V 74A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V.
Інші пропозиції APT20M34BLLG
Фото | Назва | Виробник | Інформація |
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APT20M34BLLG | Виробник : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V |
товар відсутній |
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APT20M34BLLG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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