Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 31 з 69
| Фото | Назва | Виробник | Інформація |
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APT25GT120BRG | MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs |
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APT25GT120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs кількість в упаковці: 1 шт |
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| APT25M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 16A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 140A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT25M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 16A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 140A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT26F120B2 | MICROCHIP (MICROSEMI) |
APT26F120B2 THT N channel transistors |
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APT26F120L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264 Mounting: THT Pulsed drain current: 105A Power dissipation: 1135W Gate charge: 300nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 16A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: TO264 On-state resistance: 0.58Ω Gate-source voltage: ±30V |
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APT26F120L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264 Mounting: THT Pulsed drain current: 105A Power dissipation: 1135W Gate charge: 300nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 16A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: TO264 On-state resistance: 0.58Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT26M100JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W Pulsed drain current: 140A Power dissipation: 543W Polarisation: unipolar Technology: POWER MOS 8® Drain current: 20A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: ISOTOP On-state resistance: 396mΩ Gate-source voltage: ±30V Topology: boost chopper |
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| APT26M100JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W Pulsed drain current: 140A Power dissipation: 543W Polarisation: unipolar Technology: POWER MOS 8® Drain current: 20A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: ISOTOP On-state resistance: 396mΩ Gate-source voltage: ±30V Topology: boost chopper кількість в упаковці: 1 шт |
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| APT26M100JCU3 | MICROCHIP (MICROSEMI) |
APT26M100JCU3 Transistor modules MOSFET |
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| APT27GA90BD15 | MICROCHIP (MICROSEMI) |
APT27GA90BD15 THT IGBT transistors |
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| APT28M120B2 | MICROCHIP (MICROSEMI) |
APT28M120B2 THT N channel transistors |
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| APT28M120L | MICROCHIP (MICROSEMI) |
APT28M120L THT N channel transistors |
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| APT29F100B2 | MICROCHIP (MICROSEMI) |
APT29F100B2 THT N channel transistors |
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APT29F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264 Mounting: THT Case: TO264 On-state resistance: 440mΩ Pulsed drain current: 120A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 19A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V |
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APT29F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264 Mounting: THT Case: TO264 On-state resistance: 440mΩ Pulsed drain current: 120A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 19A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT29F80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 19A On-state resistance: 0.21Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT29F80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 19A On-state resistance: 0.21Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT2X100D100J | MICROCHIP (MICROSEMI) |
APT2X100D100J Diode modules |
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| APT2X100D120J | MICROCHIP (MICROSEMI) |
APT2X100D120J Diode modules |
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APT2X100D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Technology: FRED Max. off-state voltage: 200V Max. load current: 171A Max. forward voltage: 1.4V Load current: 100A x2 Semiconductor structure: double independent |
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APT2X100D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Technology: FRED Max. off-state voltage: 200V Max. load current: 171A Max. forward voltage: 1.4V Load current: 100A x2 Semiconductor structure: double independent кількість в упаковці: 1 шт |
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APT2X100D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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APT2X100D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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| APT2X100D60J | MICROCHIP (MICROSEMI) |
APT2X100D60J Diode modules |
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APT2X100DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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APT2X100DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode кількість в упаковці: 1 шт |
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| APT2X100DQ120J | MICROCHIP (MICROSEMI) |
APT2X100DQ120J Diode modules |
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| APT2X100DQ60J | MICROCHIP (MICROSEMI) |
APT2X100DQ60J Diode modules |
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| APT2X101D100J | MICROCHIP (MICROSEMI) |
APT2X101D100J Diode modules |
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| APT2X101D120J | MICROCHIP (MICROSEMI) |
APT2X101D120J Diode modules |
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APT2X101D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Technology: FRED Max. off-state voltage: 200V Max. load current: 171A Max. forward voltage: 1.4V Load current: 100A x2 Semiconductor structure: double independent |
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APT2X101D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Technology: FRED Max. off-state voltage: 200V Max. load current: 171A Max. forward voltage: 1.4V Load current: 100A x2 Semiconductor structure: double independent кількість в упаковці: 1 шт |
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APT2X101D30J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 100A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED |
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APT2X101D30J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 100A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED кількість в упаковці: 1 шт |
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APT2X101D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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APT2X101D40J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED Technology: FRED Case: SOT227B Semiconductor structure: double independent Max. off-state voltage: 400V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 100A |
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| APT2X101D60J | MICROCHIP (MICROSEMI) |
APT2X101D60J Diode modules |
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APT2X101DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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APT2X101DQ100J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw Case: SOT227B Technology: FRED Max. off-state voltage: 1kV Load current: 100A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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| APT2X101DQ120J | MICROCHIP (MICROSEMI) |
APT2X101DQ120J Diode modules |
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| APT2X101DQ60J | MICROCHIP (MICROSEMI) |
APT2X101DQ60J Diode modules |
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APT2X101S20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 120A x2 Case: SOT227B Max. forward voltage: 1.06V Max. forward impulse current: 1kA Electrical mounting: screw Max. load current: 213A Mechanical mounting: screw Features of semiconductor devices: Schottky |
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APT2X101S20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 120A x2 Case: SOT227B Max. forward voltage: 1.06V Max. forward impulse current: 1kA Electrical mounting: screw Max. load current: 213A Mechanical mounting: screw Features of semiconductor devices: Schottky кількість в упаковці: 1 шт |
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| APT2X30D100J | MICROCHIP (MICROSEMI) |
APT2X30D100J Diode modules |
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| APT2X30D120J | MICROCHIP (MICROSEMI) |
APT2X30D120J Diode modules |
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APT2X30D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 30Ax2; SOT227B; screw Case: SOT227B Type of module: diode Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: double independent |
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APT2X30D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 30Ax2; SOT227B; screw Case: SOT227B Type of module: diode Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: double independent кількість в упаковці: 1 шт |
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APT2X30D30J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 300V; 300A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 300A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED |
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APT2X30D30J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 300V; 300A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 300A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED кількість в упаковці: 1 шт |
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| APT2X30D40J | MICROCHIP (MICROSEMI) |
APT2X30D40J Diode modules |
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| APT2X30D60J | MICROCHIP (MICROSEMI) |
APT2X30D60J Diode modules |
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| APT2X30DQ120J | MICROCHIP (MICROSEMI) |
APT2X30DQ120J Diode modules |
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APT2X30DQ60J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 600V; 30Ax2; SOT227B; screw Case: SOT227B Mechanical mounting: screw Max. off-state voltage: 0.6kV Electrical mounting: screw Load current: 30A x2 Type of module: diode Semiconductor structure: double independent Technology: FRED |
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APT2X30DQ60J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 600V; 30Ax2; SOT227B; screw Case: SOT227B Mechanical mounting: screw Max. off-state voltage: 0.6kV Electrical mounting: screw Load current: 30A x2 Type of module: diode Semiconductor structure: double independent Technology: FRED кількість в упаковці: 1 шт |
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APT2X30S20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 300A; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 300A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
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APT2X30S20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 300A; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 300A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky кількість в упаковці: 1 шт |
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| APT2X31D100J | MICROCHIP (MICROSEMI) |
APT2X31D100J Diode modules |
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| APT2X31D120J | MICROCHIP (MICROSEMI) |
APT2X31D120J Diode modules |
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APT2X31D20J | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double independent; 200V; 310A; SOT227B; screw; FRED Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 310A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: FRED |
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| APT25GT120BRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
товар відсутній
| APT25GT120BRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
| APT25M100J |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APT25M100J |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 16A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.33Ω
Pulsed drain current: 140A
Power dissipation: 545W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT26F120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
товар відсутній
| APT26F120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT26M100JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
товар відсутній
| APT26M100JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 20A; ISOTOP; Ugs: ±30V; screw; 543W
Pulsed drain current: 140A
Power dissipation: 543W
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 20A
Drain-source voltage: 1kV
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: ISOTOP
On-state resistance: 396mΩ
Gate-source voltage: ±30V
Topology: boost chopper
кількість в упаковці: 1 шт
товар відсутній
| APT26M100JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
APT26M100JCU3 Transistor modules MOSFET
APT26M100JCU3 Transistor modules MOSFET
товар відсутній
| APT29F100L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
товар відсутній
| APT29F100L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264
Mounting: THT
Case: TO264
On-state resistance: 440mΩ
Pulsed drain current: 120A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 19A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT29F80J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT29F80J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT2X100D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
товар відсутній
| APT2X100D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
кількість в упаковці: 1 шт
товар відсутній
| APT2X100D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X100D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X100DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| APT2X100DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
| APT2X101D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
товар відсутній
| APT2X101D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: FRED
Max. off-state voltage: 200V
Max. load current: 171A
Max. forward voltage: 1.4V
Load current: 100A x2
Semiconductor structure: double independent
кількість в упаковці: 1 шт
товар відсутній
| APT2X101D30J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
товар відсутній
| APT2X101D30J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 300V; 100A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 100A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT2X101D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X101D40J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
Category: Diode modules
Description: Module: diode; double independent; 400V; 100A; SOT227B; screw; FRED
Technology: FRED
Case: SOT227B
Semiconductor structure: double independent
Max. off-state voltage: 400V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 100A
товар відсутній
| APT2X101DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2802.01 грн |
| APT2X101DQ100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1kV; 100Ax2; SOT227B; screw
Case: SOT227B
Technology: FRED
Max. off-state voltage: 1kV
Load current: 100A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3362.41 грн |
| APT2X101S20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 213A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 213A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
| APT2X101S20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 213A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 213A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
кількість в упаковці: 1 шт
товар відсутній
| APT2X30D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 30Ax2; SOT227B; screw
Case: SOT227B
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 200V; 30Ax2; SOT227B; screw
Case: SOT227B
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: double independent
товар відсутній
| APT2X30D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 30Ax2; SOT227B; screw
Case: SOT227B
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: double independent
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; 30Ax2; SOT227B; screw
Case: SOT227B
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: double independent
кількість в упаковці: 1 шт
товар відсутній
| APT2X30D30J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 300V; 300A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 300V; 300A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
товар відсутній
| APT2X30D30J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 300V; 300A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 300V; 300A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT2X30DQ60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 600V; 30Ax2; SOT227B; screw
Case: SOT227B
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 30A x2
Type of module: diode
Semiconductor structure: double independent
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 600V; 30Ax2; SOT227B; screw
Case: SOT227B
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 30A x2
Type of module: diode
Semiconductor structure: double independent
Technology: FRED
товар відсутній
| APT2X30DQ60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 600V; 30Ax2; SOT227B; screw
Case: SOT227B
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 30A x2
Type of module: diode
Semiconductor structure: double independent
Technology: FRED
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 600V; 30Ax2; SOT227B; screw
Case: SOT227B
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 30A x2
Type of module: diode
Semiconductor structure: double independent
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT2X30S20J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 300A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 200V; 300A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
| APT2X30S20J |
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 300A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 200V; 300A; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
кількість в упаковці: 1 шт
товар відсутній
| APT2X31D20J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double independent; 200V; 310A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 310A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double independent; 200V; 310A; SOT227B; screw; FRED
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 310A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
товар відсутній