Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 25 з 69
| Фото | Назва | Виробник | Інформація |
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APT10086BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10086BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
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APT10086BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10090BFLLG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced |
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APT10090BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10090BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced |
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APT10090BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10090SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced |
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APT10090SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT100D60B2G | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: T-Max |
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| APT100D60B2G | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: T-Max кількість в упаковці: 1 шт |
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APT100DL60HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SOT227B Leads: M4 screws Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 100A |
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APT100DL60HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SOT227B Leads: M4 screws Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 100A кількість в упаковці: 1 шт |
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| APT100F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT100F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT100GLQ65JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: SOT227B Max. off-state voltage: 650V |
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| APT100GLQ65JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: SOT227B Max. off-state voltage: 650V кількість в упаковці: 1 шт |
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APT100GLQ65JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Case: SOT227B Max. off-state voltage: 650V |
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APT100GLQ65JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Case: SOT227B Max. off-state voltage: 650V кількість в упаковці: 1 шт |
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| APT100GN120B2G | MICROCHIP (MICROSEMI) | APT100GN120B2G THT IGBT transistors |
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| APT100GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A |
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| APT100GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A кількість в упаковці: 1 шт |
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| APT100GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A |
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| APT100GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A кількість в упаковці: 1 шт |
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| APT100GN60B2G | MICROCHIP (MICROSEMI) | APT100GN60B2G THT IGBT transistors |
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APT100GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 135A; 625W; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 135A Pulsed collector current: 300A Turn-on time: 96ns Turn-off time: 435ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 600nC Case: TO264 |
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APT100GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 135A; 625W; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 135A Pulsed collector current: 300A Turn-on time: 96ns Turn-off time: 435ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 600nC Case: TO264 кількість в упаковці: 1 шт |
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| APT100GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw |
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| APT100GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT100GT120JRDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw |
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| APT100GT120JRDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT100GT120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: boost chopper |
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| APT100GT120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: boost chopper кількість в упаковці: 1 шт |
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| APT100GT120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: buck chopper |
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| APT100GT120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: buck chopper кількість в упаковці: 1 шт |
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| APT100M50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT100M50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT100MC120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 108A Case: ISOTOP Topology: boost chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 17mΩ Pulsed drain current: 280A Power dissipation: 600W Technology: SiC Gate-source voltage: -10...25V Mechanical mounting: screw |
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| APT100MC120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 108A Case: ISOTOP Topology: boost chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 17mΩ Pulsed drain current: 280A Power dissipation: 600W Technology: SiC Gate-source voltage: -10...25V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT100S20BG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 120A Max. load current: 318A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 1kA Max. forward voltage: 1.06V Leakage current: 40µA |
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APT100S20BG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 120A Max. load current: 318A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 1kA Max. forward voltage: 1.06V Leakage current: 40µA |
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APT100S20LCTG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V Mounting: THT Semiconductor structure: common cathode; double Max. forward impulse current: 1kA Leakage current: 40µA Type of diode: Schottky rectifying Case: TO264 Max. off-state voltage: 200V Max. load current: 318A Max. forward voltage: 1.06V Load current: 120A |
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APT100S20LCTG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V Mounting: THT Semiconductor structure: common cathode; double Max. forward impulse current: 1kA Leakage current: 40µA Type of diode: Schottky rectifying Case: TO264 Max. off-state voltage: 200V Max. load current: 318A Max. forward voltage: 1.06V Load current: 120A кількість в упаковці: 1 шт |
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| APT102GA60B2 | MICROCHIP (MICROSEMI) |
APT102GA60B2 THT IGBT transistors |
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| APT102GA60L | MICROCHIP (MICROSEMI) |
APT102GA60L THT IGBT transistors |
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APT106N60B2C6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO247MAX |
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APT106N60B2C6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO247MAX кількість в упаковці: 1 шт |
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APT106N60LC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO264 |
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APT106N60LC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO264 кількість в упаковці: 1 шт |
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| APT10M07JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 900A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT10M07JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 900A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10M09LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced |
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APT10M09LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT10M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 144A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT10M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 144A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT10M11JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® |
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| APT10M11JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® кількість в упаковці: 1 шт |
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| APT10M11JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® |
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| APT10M11JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® кількість в упаковці: 1 шт |
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APT10M11LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 11mΩ Mounting: THT Gate charge: 450nC Kind of channel: enhanced |
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| APT10086BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10086BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
товар відсутній
| APT10086BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10090BFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
товар відсутній
| APT10090BFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10090BLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
товар відсутній
| APT10090BLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10090SLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
товар відсутній
| APT10090SLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT100D60B2G |
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
товар відсутній
| APT100D60B2G |
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
кількість в упаковці: 1 шт
товар відсутній
| APT100DL60HJ |
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Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SOT227B
Leads: M4 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 100A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SOT227B
Leads: M4 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 100A
товар відсутній
| APT100DL60HJ |
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Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SOT227B
Leads: M4 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 100A
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SOT227B
Leads: M4 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 100A
кількість в упаковці: 1 шт
товар відсутній
| APT100F50J |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT100F50J |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT100GLQ65JU2 |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SOT227B
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SOT227B
Max. off-state voltage: 650V
товар відсутній
| APT100GLQ65JU2 |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SOT227B
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SOT227B
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
| APT100GLQ65JU3 |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Case: SOT227B
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Case: SOT227B
Max. off-state voltage: 650V
товар відсутній
| APT100GLQ65JU3 |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Case: SOT227B
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Application: motors
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 270A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Case: SOT227B
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
| APT100GN120J |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
товар відсутній
| APT100GN120J |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
товар відсутній
| APT100GN120JDQ4 |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
товар відсутній
| APT100GN120JDQ4 |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
товар відсутній
| APT100GN60LDQ4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 135A; 625W; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 135A
Pulsed collector current: 300A
Turn-on time: 96ns
Turn-off time: 435ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 600nC
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 135A; 625W; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 135A
Pulsed collector current: 300A
Turn-on time: 96ns
Turn-off time: 435ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 600nC
Case: TO264
товар відсутній
| APT100GN60LDQ4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 135A; 625W; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 135A
Pulsed collector current: 300A
Turn-on time: 96ns
Turn-off time: 435ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 600nC
Case: TO264
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 135A; 625W; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 135A
Pulsed collector current: 300A
Turn-on time: 96ns
Turn-off time: 435ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 600nC
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
| APT100GT120JR |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
товар відсутній
| APT100GT120JR |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT100GT120JRDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
товар відсутній
| APT100GT120JRDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 67A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT100GT120JU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
товар відсутній
| APT100GT120JU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
кількість в упаковці: 1 шт
товар відсутній
| APT100GT120JU3 |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
товар відсутній
| APT100GT120JU3 |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 280A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
кількість в упаковці: 1 шт
товар відсутній
| APT100M50J |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT100M50J |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT100MC120JCU2 |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 108A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 280A
Power dissipation: 600W
Technology: SiC
Gate-source voltage: -10...25V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 108A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 280A
Power dissipation: 600W
Technology: SiC
Gate-source voltage: -10...25V
Mechanical mounting: screw
товар відсутній
| APT100MC120JCU2 |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 108A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 280A
Power dissipation: 600W
Technology: SiC
Gate-source voltage: -10...25V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 108A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 280A
Power dissipation: 600W
Technology: SiC
Gate-source voltage: -10...25V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT100S20BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 120A
Max. load current: 318A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 1kA
Max. forward voltage: 1.06V
Leakage current: 40µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 120A
Max. load current: 318A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 1kA
Max. forward voltage: 1.06V
Leakage current: 40µA
товар відсутній
| APT100S20BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 120A
Max. load current: 318A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 1kA
Max. forward voltage: 1.06V
Leakage current: 40µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 120A
Max. load current: 318A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 1kA
Max. forward voltage: 1.06V
Leakage current: 40µA
товар відсутній
| APT100S20LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V
Mounting: THT
Semiconductor structure: common cathode; double
Max. forward impulse current: 1kA
Leakage current: 40µA
Type of diode: Schottky rectifying
Case: TO264
Max. off-state voltage: 200V
Max. load current: 318A
Max. forward voltage: 1.06V
Load current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V
Mounting: THT
Semiconductor structure: common cathode; double
Max. forward impulse current: 1kA
Leakage current: 40µA
Type of diode: Schottky rectifying
Case: TO264
Max. off-state voltage: 200V
Max. load current: 318A
Max. forward voltage: 1.06V
Load current: 120A
товар відсутній
| APT100S20LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V
Mounting: THT
Semiconductor structure: common cathode; double
Max. forward impulse current: 1kA
Leakage current: 40µA
Type of diode: Schottky rectifying
Case: TO264
Max. off-state voltage: 200V
Max. load current: 318A
Max. forward voltage: 1.06V
Load current: 120A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V
Mounting: THT
Semiconductor structure: common cathode; double
Max. forward impulse current: 1kA
Leakage current: 40µA
Type of diode: Schottky rectifying
Case: TO264
Max. off-state voltage: 200V
Max. load current: 318A
Max. forward voltage: 1.06V
Load current: 120A
кількість в упаковці: 1 шт
товар відсутній
| APT106N60B2C6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO247MAX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO247MAX
товар відсутній
| APT106N60B2C6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO247MAX
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO247MAX
кількість в упаковці: 1 шт
товар відсутній
| APT106N60LC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO264
товар відсутній
| APT106N60LC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO264
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264
Mounting: THT
Drain-source voltage: 600V
Drain current: 68A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 833W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 318A
Gate charge: 308nC
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
| APT10M07JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT10M07JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10M09LVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
товар відсутній
| APT10M09LVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.35µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10M11JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT10M11JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 144A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10M11JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
товар відсутній
| APT10M11JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
товар відсутній
| APT10M11JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
товар відсутній
| APT10M11JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 576A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 106A
On-state resistance: 11mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
товар відсутній
| APT10M11LVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
товар відсутній