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APT20GN60SDQ2G Microchip Technology
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Description: IGBT FIELDSTOP COMBI 600V 20A TO
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/140ns
Switching Energy: 230µJ (on), 580µJ (off)
Test Condition: 400V, 20A, 4.3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 491.16 грн |
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Технічний опис APT20GN60SDQ2G Microchip Technology
Description: IGBT FIELDSTOP COMBI 600V 20A TO, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: D3Pak, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 9ns/140ns, Switching Energy: 230µJ (on), 580µJ (off), Test Condition: 400V, 20A, 4.3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 136 W.
Інші пропозиції APT20GN60SDQ2G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT20GN60SDQ2G | Виробник : Microchip Technology |
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товар відсутній |
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APT20GN60SDQ2G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
APT20GN60SDQ2G | Виробник : Microchip Technology |
![]() |
товар відсутній |
|
![]() |
APT20GN60SDQ2G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |