Технічний опис APT20M20JLL Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A, Mechanical mounting: screw, Electrical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 416A, Case: ISOTOP, Semiconductor structure: single transistor, Drain-source voltage: 200V, Drain current: 104A, On-state resistance: 20mΩ, Power dissipation: 463W, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції APT20M20JLL
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APT20M20JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 416A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 104A On-state resistance: 20mΩ Power dissipation: 463W Polarisation: unipolar кількість в упаковці: 1 шт |
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APT20M20JLL | Виробник : Microchip Technology |
 Trans MOSFET N-CH 200V 104A 4-Pin SOT-227 Tube |
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| APT20M20JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 416A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 104A On-state resistance: 20mΩ Power dissipation: 463W Polarisation: unipolar |
товар відсутній |