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IXTP230N04T4M IXYS
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
кількість в упаковці: 1 шт
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Технічний опис IXTP230N04T4M IXYS
Description: MOSFET N-CH 40V 230A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V.
Інші пропозиції IXTP230N04T4M
Фото | Назва | Виробник | Інформація |
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IXTP230N04T4M | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Isolated Tab Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V |
товар відсутній |
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IXTP230N04T4M | Виробник : IXYS |
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товар відсутній |
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IXTP230N04T4M | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 40W Case: TO220FP On-state resistance: 2.9mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
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