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IPA028N08N3GXKSA1 Infineon Technologies
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 665.84 грн |
10+ | 593.28 грн |
100+ | 451.94 грн |
500+ | 425.93 грн |
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Технічний опис IPA028N08N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 80V 89A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 270µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V.
Інші пропозиції IPA028N08N3GXKSA1
Фото | Назва | Виробник | Інформація |
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IPA028N08N3GXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPA028N08N3GXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 80V Drain current: 62A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 155nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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IPA028N08N3GXKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V |
товар відсутній |
|
![]() |
IPA028N08N3GXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 80V Drain current: 62A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 155nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |