| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SZBZX84C18ET1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.225W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.225W Zener voltage: 18V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
товар відсутній |
|||||||||||||||
 |
NCV317MBSTT3G | ONSEMI |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223 Mounting: SMD Application: automotive industry Manufacturer series: NCV317M Number of channels: 1 Output current: 0.5A Operating temperature: -40...125°C Kind of voltage regulator: adjustable; linear Input voltage: 1.2...40V Case: SOT223 Tolerance: ±4% Output voltage: 1.2...37V Voltage drop: 0.23V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
|
|
NCV317MABSTT3G | ONSEMI |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223 Mounting: SMD Application: automotive industry Manufacturer series: NCV317M Number of channels: 1 Output current: 0.5A Operating temperature: -40...125°C Kind of voltage regulator: adjustable; linear Input voltage: 1.2...40V Case: SOT223 Tolerance: ±2% Output voltage: 1.2...37V Voltage drop: 0.23V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
 |
MUR420RLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
на замовлення 1480 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
MBRS120T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMB; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.6V Semiconductor structure: single diode Type of diode: Schottky rectifying Max. off-state voltage: 20V Load current: 1A |
товар відсутній |
|||||||||||||||
| FDMS003N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 92A Pulsed drain current: 658A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS0300S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 180A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS0306AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS0308AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 50W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS0309AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 50W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS0310AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Mounting: SMD Kind of package: reel; tape Power dissipation: 41W Polarisation: unipolar Case: Power56 Gate charge: 37nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 22A On-state resistance: 6mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||||
| FDMS0312AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 36W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS0312S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 90A Power dissipation: 46W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS037N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104.2W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS039N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS1D2N03DSD | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS2672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 96A; 78W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 13A Pulsed drain current: 96A Power dissipation: 78W Case: Power56 Gate-source voltage: ±20V On-state resistance: 156mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| FDMS2D5N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 105A Pulsed drain current: 823A Power dissipation: 138W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
FQT4N20LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3471 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
HUF75344P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
MBRD1035CTLG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 35V; 5Ax2; DPAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 35V Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Case: DPAK Kind of package: tube |
товар відсутній |
|||||||||||||||
|
|
MBRD1035CTLT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 35V; 5Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 35V Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Case: DPAK Kind of package: reel; tape |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| MC74HCT373ADTR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
товар відсутній |
||||||||||||||||
| MC74HCT373ADWG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HCT |
товар відсутній |
||||||||||||||||
| MC74HCT373ADWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
товар відсутній |
||||||||||||||||
 |
MM74HCT373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; TTL; 4.5÷5.5VDC; SMD; TSSOP20; HCT; tube Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Trigger: level-triggered Quiescent current: 160µA |
товар відсутній |
|||||||||||||||
| MM74HCT373MTCX | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20WB Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
товар відсутній |
||||||||||||||||
 |
MM74HCT373WM | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 2; CMOS,TTL; 4.5÷5.5VDC; SMD; SO20; HCT Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 2 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO20 Manufacturer series: HCT Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Trigger: level-triggered Quiescent current: 160µA |
товар відсутній |
|||||||||||||||
| MM74HCT373WMX | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO20WB Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
товар відсутній |
||||||||||||||||
 |
NVMFS5C430NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6 Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Power dissipation: 53W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.4mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A |
товар відсутній |
|||||||||||||||
 |
MJ21193G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Current gain: 8...75 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
1N5929BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: CASE59 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 4440 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
FDPF12N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
74VHCU04M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: VHC |
товар відсутній |
|||||||||||||||
 |
74VHCU04MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: VHC |
товар відсутній |
|||||||||||||||
|
|
74VHCU04MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: VHC |
товар відсутній |
|||||||||||||||
 |
HCPL062N | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Slew rate: 25kV/μs Type of optocoupler: optocoupler Case: SO8 |
товар відсутній |
|||||||||||||||
| HCPL0453 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 19-50%@16mA Case: SO8 Max. off-state voltage: 5V Output voltage: -0.5...20V |
товар відсутній |
||||||||||||||||
| HCPL0500 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 7-50%@16mA Case: SO8 Max. off-state voltage: 5V Output voltage: -0.5...20V |
товар відсутній |
||||||||||||||||
 |
HCPL0501 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 15-30%@16mA Transfer rate: 1Mbps Case: SO8 Turn-on time: 450ns Turn-off time: 0.3µs Slew rate: 15kV/μs |
товар відсутній |
|||||||||||||||
| HCPL0531 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 19-50%@16mA Case: SO8 Max. off-state voltage: 5V Output voltage: -0.5...20V |
товар відсутній |
||||||||||||||||
| HCPL062NR2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Slew rate: 25kV/μs Type of optocoupler: optocoupler Case: SO8 |
товар відсутній |
||||||||||||||||
| HCPL0638R2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; 3.75kV; 10Mbps; SO8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 3.75kV Transfer rate: 10Mbps Case: SO8 Slew rate: 10kV/μs |
товар відсутній |
||||||||||||||||
 |
HCPL0701 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; SO8; HCPL07XX Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 500-2600%@1.6mA Case: SO8 Turn-on time: 0.3µs Turn-off time: 1.6µs Manufacturer series: HCPL07XX |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| HCPL0731 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 500-5000%@1.6mA Case: SO8 Max. off-state voltage: 5V Output voltage: -500mV...18V Manufacturer series: HCPL07XX |
товар відсутній |
||||||||||||||||
| HCPL0501R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 15-30%@16mA Transfer rate: 1Mbps Case: SO8 Turn-on time: 450ns Turn-off time: 0.3µs Slew rate: 15kV/μs |
товар відсутній |
||||||||||||||||
|
|
NTR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3744 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
1SMB5927BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 12V; 31.2mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Power dissipation: 3W Zener voltage: 12V Zener resistance: 6.5Ω Zener current: 31.2mA Tolerance: ±5% |
на замовлення 3885 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
NC7SZ18P6X | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; reel,tape Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: SC70 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: demultiplexer Supply voltage: 1.65...5.5V DC |
товар відсутній |
|||||||||||||||
|
|
MMBF0201NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
|
|
MMBF170 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 6643 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MMBF170LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 14904 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MMBF2201NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Pulsed drain current: 750A Power dissipation: 0.15W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MMBF4117 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 225mW; SOT23; 50mA Gate current: 50mA Type of transistor: N-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Case: SOT23 Gate-source voltage: -40V Mounting: SMD |
на замовлення 1464 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MMBF4392LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 2550 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
MMBF5103 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
товар відсутній |
|||||||||||||||
| FOD8163 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs Type of optocoupler: optotriac Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: SOP6 Turn-on time: 22ns Turn-off time: 9ns Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...7.5V Manufacturer series: FOD8163 |
товар відсутній |
||||||||||||||||
|
|
SL24T1G | ONSEMI |
Category: Diodes - others Description: Diode: TVS+FRD; 24V; 300W; SOT23-3; Ifsm: 5A; reel,tape; Ir: 5uA Mounting: SMD Features of semiconductor devices: snubber diode Peak pulse power dissipation: 300W Case: SOT23-3 Max. off-state voltage: 24V Max. forward impulse current: 5A Breakdown voltage: 26.7V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS+FRD |
товар відсутній |
|||||||||||||||
| MCH3474-TL-W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1W Case: MCPH3 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
| SZBZX84C18ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
товар відсутній
| NCV317MBSTT3G |
|
Виробник: ONSEMI
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±4%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±4%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
товар відсутній
| NCV317MABSTT3G |
|
Виробник: ONSEMI
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±2%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±2%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
товар відсутній
| MUR420RLG | |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
на замовлення 1480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.62 грн |
| 14+ | 27.8 грн |
| 15+ | 25.48 грн |
| 25+ | 22.5 грн |
| 55+ | 15.46 грн |
| 149+ | 14.66 грн |
| 1000+ | 14.45 грн |
| MBRS120T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.6V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.6V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Load current: 1A
товар відсутній
| FDMS003N08C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS007N08LC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS0300S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS0306AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS0308AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS0309AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS0310AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 41W
Polarisation: unipolar
Case: Power56
Gate charge: 37nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 41W
Polarisation: unipolar
Case: Power56
Gate charge: 37nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
товар відсутній
| FDMS0312AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 36W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 36W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS0312S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS037N08B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS039N08B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS1D2N03DSD |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS2672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 96A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13A
Pulsed drain current: 96A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 96A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13A
Pulsed drain current: 96A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS2D5N08C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQT4N20LTF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3471 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 10+ | 38.04 грн |
| 25+ | 32.09 грн |
| 35+ | 24.9 грн |
| 95+ | 23.52 грн |
| 1000+ | 22.36 грн |
| HUF75344P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.68 грн |
| 3+ | 183.67 грн |
| 6+ | 142.29 грн |
| 17+ | 134.3 грн |
| MBRD1035CTLG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 5Ax2; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 5Ax2; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK
Kind of package: tube
товар відсутній
| MBRD1035CTLT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 5Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 35V; 5Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK
Kind of package: reel; tape
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.25 грн |
| MC74HCT373ADTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
товар відсутній
| MC74HCT373ADWG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HCT
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HCT
товар відсутній
| MC74HCT373ADWR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
товар відсутній
| MM74HCT373MTC |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; TTL; 4.5÷5.5VDC; SMD; TSSOP20; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 160µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; TTL; 4.5÷5.5VDC; SMD; TSSOP20; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 160µA
товар відсутній
| MM74HCT373MTCX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
товар відсутній
| MM74HCT373WM |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 2; CMOS,TTL; 4.5÷5.5VDC; SMD; SO20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 2
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 160µA
Category: Latches
Description: IC: digital; D latch; Ch: 2; CMOS,TTL; 4.5÷5.5VDC; SMD; SO20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 2
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 160µA
товар відсутній
| MM74HCT373WMX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
товар відсутній
| NVMFS5C430NLAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Power dissipation: 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Power dissipation: 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
товар відсутній
| MJ21193G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 8...75
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 8...75
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 623.87 грн |
| 3+ | 400.72 грн |
| 6+ | 378.95 грн |
| 1N5929BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE59
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE59
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 4440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.45 грн |
| 100+ | 9.22 грн |
| 110+ | 8.05 грн |
| 295+ | 7.61 грн |
| FDPF12N50T |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.9 грн |
| 4+ | 111.07 грн |
| 10+ | 98 грн |
| 11+ | 84.94 грн |
| 28+ | 80.58 грн |
| 74VHCU04M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: VHC
товар відсутній
| 74VHCU04MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: VHC
товар відсутній
| 74VHCU04MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHC
товар відсутній
| HCPL062N |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Slew rate: 25kV/μs
Type of optocoupler: optocoupler
Case: SO8
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Slew rate: 25kV/μs
Type of optocoupler: optocoupler
Case: SO8
товар відсутній
| HCPL0453 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
товар відсутній
| HCPL0500 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 7-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 7-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
товар відсутній
| HCPL0501 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
товар відсутній
| HCPL0531 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
товар відсутній
| HCPL062NR2 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Slew rate: 25kV/μs
Type of optocoupler: optocoupler
Case: SO8
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Slew rate: 25kV/μs
Type of optocoupler: optocoupler
Case: SO8
товар відсутній
| HCPL0638R2 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 3.75kV; 10Mbps; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: SO8
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 3.75kV; 10Mbps; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: SO8
Slew rate: 10kV/μs
товар відсутній
| HCPL0701 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; SO8; HCPL07XX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 500-2600%@1.6mA
Case: SO8
Turn-on time: 0.3µs
Turn-off time: 1.6µs
Manufacturer series: HCPL07XX
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; SO8; HCPL07XX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 500-2600%@1.6mA
Case: SO8
Turn-on time: 0.3µs
Turn-off time: 1.6µs
Manufacturer series: HCPL07XX
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.45 грн |
| 5+ | 144.46 грн |
| 8+ | 108.89 грн |
| 22+ | 102.95 грн |
| 100+ | 101.63 грн |
| HCPL0731 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 500-5000%@1.6mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -500mV...18V
Manufacturer series: HCPL07XX
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 500-5000%@1.6mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -500mV...18V
Manufacturer series: HCPL07XX
товар відсутній
| HCPL0501R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
товар відсутній
| NTR4501NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3744 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.1 грн |
| 52+ | 7.04 грн |
| 100+ | 5.81 грн |
| 161+ | 5.23 грн |
| 441+ | 4.94 грн |
| 3000+ | 4.86 грн |
| 1SMB5927BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 31.2mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Zener voltage: 12V
Zener resistance: 6.5Ω
Zener current: 31.2mA
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 31.2mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Zener voltage: 12V
Zener resistance: 6.5Ω
Zener current: 31.2mA
Tolerance: ±5%
на замовлення 3885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 21.11 грн |
| 35+ | 11.47 грн |
| 100+ | 8.42 грн |
| 275+ | 7.99 грн |
| 2500+ | 7.62 грн |
| NC7SZ18P6X |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer
Supply voltage: 1.65...5.5V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer
Supply voltage: 1.65...5.5V DC
товар відсутній
| MMBF0201NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMBF170 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 6643 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 9.62 грн |
| 64+ | 5.68 грн |
| 213+ | 3.96 грн |
| 250+ | 3.95 грн |
| 586+ | 3.74 грн |
| MMBF170LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 14904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 64+ | 6.18 грн |
| 85+ | 4.3 грн |
| 246+ | 3.43 грн |
| 676+ | 3.24 грн |
| 3000+ | 3.19 грн |
| MMBF2201NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Pulsed drain current: 750A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Pulsed drain current: 750A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.85 грн |
| 36+ | 10.16 грн |
| 40+ | 9.07 грн |
| 100+ | 8.49 грн |
| 129+ | 6.53 грн |
| 355+ | 6.17 грн |
| MMBF4117 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 225mW; SOT23; 50mA
Gate current: 50mA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 225mW; SOT23; 50mA
Gate current: 50mA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
на замовлення 1464 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.34 грн |
| 25+ | 15.39 грн |
| 79+ | 10.74 грн |
| 217+ | 10.15 грн |
| MMBF4392LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.54 грн |
| 34+ | 10.74 грн |
| 100+ | 8.64 грн |
| 112+ | 7.49 грн |
| 308+ | 7.08 грн |
| MMBF5103 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
товар відсутній
| FOD8163 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: SOP6
Turn-on time: 22ns
Turn-off time: 9ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7.5V
Manufacturer series: FOD8163
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: SOP6
Turn-on time: 22ns
Turn-off time: 9ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7.5V
Manufacturer series: FOD8163
товар відсутній
| SL24T1G |
|
Виробник: ONSEMI
Category: Diodes - others
Description: Diode: TVS+FRD; 24V; 300W; SOT23-3; Ifsm: 5A; reel,tape; Ir: 5uA
Mounting: SMD
Features of semiconductor devices: snubber diode
Peak pulse power dissipation: 300W
Case: SOT23-3
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS+FRD
Category: Diodes - others
Description: Diode: TVS+FRD; 24V; 300W; SOT23-3; Ifsm: 5A; reel,tape; Ir: 5uA
Mounting: SMD
Features of semiconductor devices: snubber diode
Peak pulse power dissipation: 300W
Case: SOT23-3
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS+FRD
товар відсутній
| MCH3474-TL-W |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: MCPH3
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: MCPH3
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній