| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MCH3474-TL-W | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1W Case: MCPH3 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QRD1114 | ONSEMI |
 Category: PCB Photoelectric SensorsDescription: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 0...35V |
на замовлення 531 шт: термін постачання 21-30 дні (днів) |
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| 2SB1202S-E | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1W Case: IPAK Current gain: 140...280 Mounting: THT Kind of package: tube Frequency: 150MHz |
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2N4923G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO225 Current gain: 10...150 Mounting: THT Kind of package: bulk Frequency: 3MHz |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
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NCP81074ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
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NCP81074BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
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MUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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SMUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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1N5351BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 822 шт: термін постачання 21-30 дні (днів) |
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1N5351BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
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FDS5351 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8 Kind of package: reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 6.1A On-state resistance: 58.8mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 27nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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1SMB5926BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 11V; 34.1mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 11V Zener current: 34.1mA Mounting: SMD Tolerance: ±5% Zener resistance: 5.5Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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FDP2572 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Mounting: THT Drain-source voltage: 150V Kind of package: tube Case: TO220AB Gate charge: 34nC Kind of channel: enhanced Drain current: 20A Gate-source voltage: ±20V On-state resistance: 146mΩ Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar |
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FDD120AN15A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 65W; DPAK Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14.5nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: 150V Drain current: 14A On-state resistance: 282mΩ Type of transistor: N-MOSFET |
на замовлення 1841 шт: термін постачання 21-30 дні (днів) |
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BAS21LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape |
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SBAS21LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
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1N5242B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; bulk; DO35; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 4570 шт: термін постачання 21-30 дні (днів) |
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MJE15031G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 70MHz |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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FJP3305H1TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Kind of package: tube Polarisation: bipolar Power dissipation: 75W Case: TO220AB Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 4A Type of transistor: NPN |
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FJP3305H2TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Power dissipation: 75W Polarisation: bipolar Type of transistor: NPN Current gain: 8...40 Frequency: 4MHz Collector current: 4A Collector-emitter voltage: 400V |
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SMB Kind of package: reel; tape |
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MC14011UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 100ns Family: HEF4000B |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
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MC14011UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 100ns Family: HEF4000B |
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MBRB2545CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape Mounting: SMD Kind of package: reel; tape Max. load current: 30A Max. forward voltage: 0.65V Load current: 15A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Case: D2PAK Max. off-state voltage: 45V |
на замовлення 792 шт: термін постачання 21-30 дні (днів) |
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| SBRB2545CTG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.82V Case: D2PAK Kind of package: tube Max. forward impulse current: 150A |
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MJW18020G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3 Kind of package: tube Collector-emitter voltage: 450V Power dissipation: 250W Polarisation: bipolar Type of transistor: NPN Current gain: 4...34 Case: TO247-3 Frequency: 13MHz Collector current: 30A Mounting: THT |
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MMUN2137LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MMSZ15T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 6050 шт: термін постачання 21-30 дні (днів) |
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| FDU3N40TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Pulsed drain current: 8A Power dissipation: 30W Case: IPAK Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 6nC Kind of package: tube Kind of channel: enhanced |
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SMF12CT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5 Type of diode: TVS array Breakdown voltage: 13.3...15V Max. forward impulse current: 6A Peak pulse power dissipation: 100W Semiconductor structure: common anode Mounting: SMD Case: SC88 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 5 Kind of package: reel; tape |
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FL7733AMX | ONSEMI |
Category: LED drivers Description: IC: driver; LED controller; SOP8; linear dimming Type of integrated circuit: driver Kind of integrated circuit: LED controller Case: SOP8 Integrated circuit features: linear dimming Mounting: SMD |
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| NCP152MX280120TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6 Mounting: SMD Case: XDFN6 Tolerance: ±2% Operating temperature: -40...85°C Manufacturer series: NCP152 Number of channels: 2 Input voltage: 1.9...5.25V Output current: 0.15A Output voltage: 1.2V; 2.8V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
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MBR360G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; bulk Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO201AD Kind of package: bulk Max. forward impulse current: 80A Max. forward voltage: 1.08V |
на замовлення 165 шт: термін постачання 21-30 дні (днів) |
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| FPF2495CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.1Ω Output current: 2.2A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Supply voltage: 2.5...5.5V DC |
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| FPF2495UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
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| FPF2496UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.5A; SMD; WLCSP9; reel,tape; -40÷85°C Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.1Ω Output current: 2.5A Type of integrated circuit: power switch Supply voltage: 3.5...5.5V DC |
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| FPF2498BUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Case: WLCSP6 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 80mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: thermal protection; undervoltage protection Supply voltage: 3.5...12V DC |
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2N6388G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 10A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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MOC3163M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; zero voltage crossing driver; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: zero voltage crossing driver Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC3163M Slew rate: 1kV/μs |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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MC14014BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷18VDC Operating temperature: -40...85°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: 8bit; static shift register Case: SO16 |
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MC14014BDG | ONSEMI |
Category: Shift registers Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; 3÷18VDC Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: tube Technology: CMOS Kind of integrated circuit: 8bit; shift register Case: SOIC16 |
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| FDMC012N03 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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SZMM3Z10VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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SZMM3Z10VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z11VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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SZMM3Z12VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Application: automotive industry |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
на замовлення 1680 шт: термін постачання 21-30 дні (днів) |
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BDW94C | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: bulk |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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BDW94CFTU | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 30W Case: TO220FP Current gain: 100...20000 Mounting: THT Kind of package: tube |
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MJL1302AG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264 Mounting: THT Kind of package: tube Power dissipation: 200W Polarisation: bipolar Case: TO264 Frequency: 30MHz Collector-emitter voltage: 260V Collector current: 15A Type of transistor: PNP |
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MC74HCT86ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HCT |
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MC74HCT86ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HCT |
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FOD4108 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us Case: DIP6 Mounting: THT Manufacturer series: FOD4108 Turn-on time: 60µs Turn-off time: 52µs Number of channels: 1 Kind of output: triac Insulation voltage: 5kV Slew rate: 10kV/μs Type of optocoupler: optotriac |
на замовлення 965 шт: термін постачання 21-30 дні (днів) |
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NTR4101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Gate charge: 7.5nC Drain-source voltage: -20V Drain current: -1.7A On-state resistance: 0.21Ω Type of transistor: P-MOSFET Power dissipation: 0.21W Kind of package: reel; tape |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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MC79M05BDTG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
товар відсутній |
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MC79M05BDTRKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; ±4%; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
товар відсутній |
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MC79M05BTG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -5V Output current: 0.5A Case: TO220AB Mounting: THT Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Manufacturer series: MC79M00 |
товар відсутній |
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MC79M05CDTRKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
товар відсутній |
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H11AA1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Collector-emitter voltage: 100V Case: DIP6 |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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| MCH3474-TL-W |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: MCPH3
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: MCPH3
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QRD1114 | |
|
Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.29 грн |
| FOD3150 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
на замовлення 531 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 82.87 грн |
| 6+ | 68.97 грн |
| 15+ | 58.91 грн |
| 40+ | 55.7 грн |
| 250+ | 53.72 грн |
| 2SB1202S-E |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1W
Case: IPAK
Current gain: 140...280
Mounting: THT
Kind of package: tube
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1W
Case: IPAK
Current gain: 140...280
Mounting: THT
Kind of package: tube
Frequency: 150MHz
товар відсутній
| 2N4923G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO225
Current gain: 10...150
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO225
Current gain: 10...150
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
на замовлення 316 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 44.56 грн |
| 12+ | 30.42 грн |
| 25+ | 27.37 грн |
| 40+ | 21.13 грн |
| 110+ | 19.96 грн |
| NCP81074ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
товар відсутній
| NCP81074BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
товар відсутній
| MUN5113DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.1 грн |
| 110+ | 3.63 грн |
| SMUN5113DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.32 грн |
| 100+ | 3.73 грн |
| 250+ | 3.3 грн |
| 290+ | 2.93 грн |
| 800+ | 2.77 грн |
| 3000+ | 2.76 грн |
| 1N5351BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 822 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.02 грн |
| 25+ | 16.99 грн |
| 63+ | 13.59 грн |
| 172+ | 12.85 грн |
| 1N5351BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
товар відсутній
| FDS5351 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.67 грн |
| 11+ | 33.39 грн |
| 25+ | 29.76 грн |
| 34+ | 25.55 грн |
| 92+ | 24.17 грн |
| 1SMB5926BT3G | |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; 34.1mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Zener current: 34.1mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 5.5Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; 34.1mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Zener current: 34.1mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 5.5Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.26 грн |
| 50+ | 7.99 грн |
| 100+ | 6.39 грн |
| 140+ | 6.1 грн |
| 380+ | 5.81 грн |
| FDP2572 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 34nC
Kind of channel: enhanced
Drain current: 20A
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 34nC
Kind of channel: enhanced
Drain current: 20A
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
товар відсутній
| FDD120AN15A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 65W; DPAK
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 14A
On-state resistance: 282mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 65W; DPAK
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 14A
On-state resistance: 282mΩ
Type of transistor: N-MOSFET
на замовлення 1841 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.14 грн |
| 8+ | 45.88 грн |
| 25+ | 36.81 грн |
| 27+ | 31.94 грн |
| 74+ | 30.2 грн |
| BAS21LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
товар відсутній
| SBAS21LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| 1N5242B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; DO35; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; DO35; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 4570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 76+ | 5.16 грн |
| 131+ | 2.79 грн |
| 250+ | 1.89 грн |
| 653+ | 1.3 грн |
| 1796+ | 1.23 грн |
| MJE15031G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
на замовлення 231 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.58 грн |
| 10+ | 71.87 грн |
| 13+ | 64.61 грн |
| 36+ | 60.98 грн |
| FJP3305H1TU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 4A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 4A
Type of transistor: NPN
товар відсутній
| FJP3305H2TU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 75W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 8...40
Frequency: 4MHz
Collector current: 4A
Collector-emitter voltage: 400V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 75W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 8...40
Frequency: 4MHz
Collector current: 4A
Collector-emitter voltage: 400V
товар відсутній
| MBRS2040LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SMB
Kind of package: reel; tape
товар відсутній
| MC14011UBDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 100ns
Family: HEF4000B
на замовлення 206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 44.3 грн |
| 25+ | 30.58 грн |
| 32+ | 27.45 грн |
| 86+ | 25.95 грн |
| MC14011UBDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
товар відсутній
| MBRB2545CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. load current: 30A
Max. forward voltage: 0.65V
Load current: 15A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 45V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. load current: 30A
Max. forward voltage: 0.65V
Load current: 15A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Case: D2PAK
Max. off-state voltage: 45V
на замовлення 792 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.98 грн |
| 5+ | 87.84 грн |
| 13+ | 67.51 грн |
| 35+ | 63.88 грн |
| SBRB2545CTG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 150A
товар відсутній
| MJW18020G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Kind of package: tube
Collector-emitter voltage: 450V
Power dissipation: 250W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 4...34
Case: TO247-3
Frequency: 13MHz
Collector current: 30A
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Kind of package: tube
Collector-emitter voltage: 450V
Power dissipation: 250W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 4...34
Case: TO247-3
Frequency: 13MHz
Collector current: 30A
Mounting: THT
товар відсутній
| MMUN2137LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.29 грн |
| MMSZ15T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 6050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.85 грн |
| 175+ | 2.15 грн |
| 500+ | 1.73 грн |
| 575+ | 1.5 грн |
| 1550+ | 1.42 грн |
| FDU3N40TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Pulsed drain current: 8A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Pulsed drain current: 8A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SMF12CT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Max. forward impulse current: 6A
Peak pulse power dissipation: 100W
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 5
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Max. forward impulse current: 6A
Peak pulse power dissipation: 100W
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 5
Kind of package: reel; tape
товар відсутній
| FL7733AMX |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED controller; SOP8; linear dimming
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Case: SOP8
Integrated circuit features: linear dimming
Mounting: SMD
Category: LED drivers
Description: IC: driver; LED controller; SOP8; linear dimming
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Case: SOP8
Integrated circuit features: linear dimming
Mounting: SMD
товар відсутній
| NCP152MX280120TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Case: XDFN6
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Number of channels: 2
Input voltage: 1.9...5.25V
Output current: 0.15A
Output voltage: 1.2V; 2.8V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Case: XDFN6
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Number of channels: 2
Input voltage: 1.9...5.25V
Output current: 0.15A
Output voltage: 1.2V; 2.8V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
товар відсутній
| MBR360G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: bulk
Max. forward impulse current: 80A
Max. forward voltage: 1.08V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: bulk
Max. forward impulse current: 80A
Max. forward voltage: 1.08V
на замовлення 165 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.6 грн |
| 25+ | 18.37 грн |
| 60+ | 14.1 грн |
| 165+ | 13.34 грн |
| FPF2495CUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 2.5...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 2.5...5.5V DC
товар відсутній
| FPF2495UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FPF2496UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.5A; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.5A
Type of integrated circuit: power switch
Supply voltage: 3.5...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 2.5A; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.5A
Type of integrated circuit: power switch
Supply voltage: 3.5...5.5V DC
товар відсутній
| FPF2498BUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 80mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 3.5...12V DC
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 80mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 3.5...12V DC
товар відсутній
| 2N6388G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.29 грн |
| 10+ | 43.92 грн |
| 29+ | 29.98 грн |
| 79+ | 28.38 грн |
| MOC3163M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.14 грн |
| 6+ | 70.42 грн |
| 16+ | 54.45 грн |
| 43+ | 51.54 грн |
| MC14014BDR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷18VDC
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: 8bit; static shift register
Case: SO16
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷18VDC
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: 8bit; static shift register
Case: SO16
товар відсутній
| MC14014BDG |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 8bit; shift register
Case: SOIC16
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 8bit; shift register
Case: SOIC16
товар відсутній
| FDMC012N03 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SZMM3Z10VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| SZMM3Z10VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.65 грн |
| 100+ | 3.89 грн |
| 250+ | 3.43 грн |
| 280+ | 3.07 грн |
| 760+ | 2.9 грн |
| SZMM3Z11VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| SZMM3Z12VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
на замовлення 820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 8.05 грн |
| 54+ | 6.75 грн |
| 151+ | 5.56 грн |
| 250+ | 5.55 грн |
| 415+ | 5.26 грн |
| SZMM3Z12VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1680 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.17 грн |
| 180+ | 4.85 грн |
| 490+ | 4.58 грн |
| BDW94C |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.12 грн |
| 8+ | 49.51 грн |
| 23+ | 37.82 грн |
| 62+ | 35.72 грн |
| BDW94CFTU |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
товар відсутній
| MJL1302AG |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Kind of package: tube
Power dissipation: 200W
Polarisation: bipolar
Case: TO264
Frequency: 30MHz
Collector-emitter voltage: 260V
Collector current: 15A
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Kind of package: tube
Power dissipation: 200W
Polarisation: bipolar
Case: TO264
Frequency: 30MHz
Collector-emitter voltage: 260V
Collector current: 15A
Type of transistor: PNP
товар відсутній
| MC74HCT86ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
товар відсутній
| MC74HCT86ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
товар відсутній
| FOD4108 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Manufacturer series: FOD4108
Turn-on time: 60µs
Turn-off time: 52µs
Number of channels: 1
Kind of output: triac
Insulation voltage: 5kV
Slew rate: 10kV/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Manufacturer series: FOD4108
Turn-on time: 60µs
Turn-off time: 52µs
Number of channels: 1
Kind of output: triac
Insulation voltage: 5kV
Slew rate: 10kV/μs
Type of optocoupler: optotriac
на замовлення 965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.68 грн |
| 5+ | 183.67 грн |
| 6+ | 153.18 грн |
| 16+ | 144.46 грн |
| NTR4101PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Gate charge: 7.5nC
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
Power dissipation: 0.21W
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Gate charge: 7.5nC
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
Power dissipation: 0.21W
Kind of package: reel; tape
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.31 грн |
| 50+ | 8.78 грн |
| MC79M05BDTG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
товар відсутній
| MC79M05BDTRKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; ±4%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; ±4%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
товар відсутній
| MC79M05BTG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Manufacturer series: MC79M00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Manufacturer series: MC79M00
товар відсутній
| MC79M05CDTRKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
товар відсутній
| H11AA1M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 100V
Case: DIP6
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.42 грн |
| 12+ | 31 грн |