| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SBAS16LT1G | ONSEMI |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
LM393DR2G | ONSEMI |
 Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8 Operating voltage: 2...36V Mounting: SMT Number of comparators: 2 Type of integrated circuit: comparator Kind of comparator: universal Case: SO8 |
на замовлення 1670 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
NCP785AH120T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD Mounting: SMD Case: SOT89 Operating temperature: -40...85°C Tolerance: ±5% Manufacturer series: NCP785A Output voltage: 1.2V Output current: 10mA Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 25...450V Kind of voltage regulator: fixed; LDO; linear |
товар відсутній |
|||||||||||||
|
|
NCP785AH150T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; SOT89; SMD Mounting: SMD Number of channels: 1 Case: SOT89 Output voltage: 1.5V Operating temperature: -40...85°C Manufacturer series: NCP785A Input voltage: 25...450V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 10mA Tolerance: ±5% |
товар відсутній |
|||||||||||||
|
|
NCP785AH50T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; SOT89; SMD; ±5% Mounting: SMD Number of channels: 1 Case: SOT89 Output voltage: 5V Operating temperature: -40...85°C Manufacturer series: NCP785A Input voltage: 25...450V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 10mA Tolerance: ±5% |
товар відсутній |
|||||||||||||
 |
NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1742 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| NTDV20P06LT4G-VF01 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: DPAK Drain-source voltage: 60V Drain current: 15.5A On-state resistance: 143mΩ |
товар відсутній |
||||||||||||||
 |
MC78L12ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 14.5...27V Manufacturer series: MC78L00A |
на замовлення 1573 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
FQD9N25TM-F080 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
| FQU9N25TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
FDA59N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 35A Pulsed drain current: 236A Power dissipation: 392W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
FDA69N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44.2A Pulsed drain current: 276A Power dissipation: 480W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
FQPF9N25C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 35.2A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
NTD20N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 60W Case: DPAK Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
|
|
FDPF320N06L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 84A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |
|||||||||||||
|
|
RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1484 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
NTD3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2381 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| NRVB830MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 30V Load current: 8A Max. load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.7V |
товар відсутній |
||||||||||||||
| NRVB830MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry |
товар відсутній |
||||||||||||||
 |
KA7552A | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; PWM controller; 8.7÷30V; Uout: 1.3÷18VDC; DIP8; tube Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Case: DIP8 Output current: 1.5A Output voltage: 1.3...18V DC Number of channels: 1 Mounting: THT Operating voltage: 8.7...30V Frequency: 0.6MHz Kind of package: tube |
на замовлення 1742 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
на замовлення 2850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BC849CLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 4892 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MC14017BDG | ONSEMI |
Category: Counters/dividers Description: IC: digital; decade counter; CMOS; SMD; SO16 Mounting: SMD Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: decade counter Case: SO16 |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MC14017BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: decade counter Case: SOIC16 Number of inputs: 3 |
товар відсутній |
|||||||||||||
|
|
FQD17P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3548 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
FQP17P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
FQU17P06TU | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: IPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
MMBZ5238B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 8.7V; SMD; reel,tape; SOT23; single diode Zener voltage: 8.7V Case: SOT23 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.225W |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
MMBZ5238BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 8.7V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA Zener voltage: 8.7V Leakage current: 3µA Case: SOT23 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.225W Zener current: 20mA |
товар відсутній |
|||||||||||||
 |
MMSZ5238B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode Zener voltage: 8.7V Case: SOD123 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.5W |
на замовлення 925 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
MMSZ5238BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode Zener voltage: 8.7V Case: SOD123 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.5W |
на замовлення 3955 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| 2SD1801S-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.8W Case: TO252 Current gain: 100...560 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товар відсутній |
||||||||||||||
| ESD7504MUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 5V Mounting: SMD Case: uDFN10 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Capacitance: 0.55pF |
товар відсутній |
||||||||||||||
 |
ESD8351XV2T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1 Mounting: SMD Max. off-state voltage: 3.3V Breakdown voltage: 7V Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Case: SOD523 |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
ESD9101P2T5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 7V Case: SOD923 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
товар відсутній |
|||||||||||||
|
|
ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD923 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
товар відсутній |
|||||||||||||
| ESDR0502NMUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3 Kind of package: reel; tape Number of channels: 3 Type of diode: TVS array Features of semiconductor devices: ESD protection Mounting: SMD Case: uDFN6 Max. off-state voltage: 5.5V Max. forward impulse current: 3A Breakdown voltage: 6V Leakage current: 1µA |
товар відсутній |
||||||||||||||
| ESD7383NCTBG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3 Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 50W Mounting: SMD Case: WLCSP4 Max. off-state voltage: 3...5.5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 3 Kind of package: reel; tape Capacitance: 1.5pF |
товар відсутній |
||||||||||||||
|
|
NTD24N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
FDB024N06 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 190A Pulsed drain current: 1060A Power dissipation: 395W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 226nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
MC74HC30ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC |
товар відсутній |
|||||||||||||
| MC74HC30ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
товар відсутній |
||||||||||||||
 |
MC74HC30ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
товар відсутній |
|||||||||||||
 |
NCV7356D1R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 5...27V DC Interface: CAN bus |
товар відсутній |
|||||||||||||
 |
MC14528BDG | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Number of channels: 2 Technology: CMOS Kind of integrated circuit: monostable; multivibrator Number of inputs: 3 Supply voltage: 3...18V DC |
товар відсутній |
|||||||||||||
|
|
MC14528BDR2G | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 2 Technology: CMOS Kind of integrated circuit: monostable; multivibrator Number of inputs: 3 Supply voltage: 3...18V DC |
товар відсутній |
|||||||||||||
 |
FODM2701 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-300%@5mA Collector-emitter voltage: 40V Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V |
на замовлення 1925 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
FODM2701R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-300%@5mA Collector-emitter voltage: 40V Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs |
товар відсутній |
|||||||||||||
| 2SA2126-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252 Mounting: SMD Case: TO252 Polarisation: bipolar Power dissipation: 0.8W Type of transistor: PNP Kind of package: reel; tape Collector current: 3A Current gain: 200...560 Collector-emitter voltage: 50V Frequency: 390MHz |
товар відсутній |
||||||||||||||
 |
2SA2126-TL-H | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.8W Case: TO252 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
на замовлення 1045 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
NRVB230LSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.43V Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 40A Application: automotive industry |
товар відсутній |
|||||||||||||
 |
FOD852300W | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4 Type of optocoupler: optocoupler Mounting: THT Case: DIP4 Turn-on time: 0.1ms Turn-off time: 20µs Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 272 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MJD112-1G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK Mounting: THT Current gain: 100...12000 Collector current: 2A Type of transistor: NPN Power dissipation: 1.75W Polarisation: bipolar Kind of transistor: Darlington Case: IPAK Collector-emitter voltage: 100V |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
|
| SBAS16LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.47 грн |
| 100+ | 3.77 грн |
| 250+ | 3.34 грн |
| 280+ | 3.06 грн |
| 770+ | 2.89 грн |
| LM393DR2G | |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8
Operating voltage: 2...36V
Mounting: SMT
Number of comparators: 2
Type of integrated circuit: comparator
Kind of comparator: universal
Case: SO8
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8
Operating voltage: 2...36V
Mounting: SMT
Number of comparators: 2
Type of integrated circuit: comparator
Kind of comparator: universal
Case: SO8
на замовлення 1670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.8 грн |
| 22+ | 16.84 грн |
| 29+ | 12.92 грн |
| 50+ | 10.45 грн |
| 86+ | 10.03 грн |
| 100+ | 9.07 грн |
| NCP785AH120T1G |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD
Mounting: SMD
Case: SOT89
Operating temperature: -40...85°C
Tolerance: ±5%
Manufacturer series: NCP785A
Output voltage: 1.2V
Output current: 10mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 25...450V
Kind of voltage regulator: fixed; LDO; linear
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD
Mounting: SMD
Case: SOT89
Operating temperature: -40...85°C
Tolerance: ±5%
Manufacturer series: NCP785A
Output voltage: 1.2V
Output current: 10mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 25...450V
Kind of voltage regulator: fixed; LDO; linear
товар відсутній
| NCP785AH150T1G |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; SOT89; SMD
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 1.5V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Input voltage: 25...450V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 10mA
Tolerance: ±5%
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; SOT89; SMD
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 1.5V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Input voltage: 25...450V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 10mA
Tolerance: ±5%
товар відсутній
| NCP785AH50T1G |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 5V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Input voltage: 25...450V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 10mA
Tolerance: ±5%
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 5V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Input voltage: 25...450V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 10mA
Tolerance: ±5%
товар відсутній
| NTD20P06LT4G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.11 грн |
| 10+ | 51.54 грн |
| 26+ | 32.89 грн |
| 72+ | 31.14 грн |
| 1000+ | 29.98 грн |
| NTDV20P06LT4G-VF01 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 15.5A
On-state resistance: 143mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 15.5A
On-state resistance: 143mΩ
товар відсутній
| MC78L12ACPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 14.5...27V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 14.5...27V
Manufacturer series: MC78L00A
на замовлення 1573 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.67 грн |
| 26+ | 14.16 грн |
| 86+ | 9.95 грн |
| 237+ | 9.36 грн |
| FQD9N25TM-F080 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQU9N25TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDA59N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.85 грн |
| 5+ | 227.95 грн |
| 6+ | 166.24 грн |
| 14+ | 156.81 грн |
| FDA69N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQPF9N25C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 35.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 35.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTD20N06LT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.36 грн |
| 7+ | 53.72 грн |
| 20+ | 42.83 грн |
| 55+ | 40.65 грн |
| NTD20N06T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTDV20N06T4G-VF01 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDPF320N06L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| RFD12N06RLESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.67 грн |
| 10+ | 49.73 грн |
| 22+ | 39.32 грн |
| 60+ | 37.18 грн |
| 250+ | 36.01 грн |
| 500+ | 35.72 грн |
| NTD3055L104T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2381 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.84 грн |
| 24+ | 36.15 грн |
| 65+ | 34.12 грн |
| NTD3055L170T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTF3055-100T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTF3055L108T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NVF3055L108T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.2 грн |
| 10+ | 45.95 грн |
| 24+ | 35.92 грн |
| 65+ | 33.96 грн |
| 250+ | 32.96 грн |
| RFD3055LESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 641 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 82.09 грн |
| 11+ | 35.86 грн |
| 25+ | 28.82 грн |
| 34+ | 25.05 грн |
| 93+ | 23.67 грн |
| NRVB830MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.7V
товар відсутній
| NRVB830MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
товар відсутній
| KA7552A |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; 8.7÷30V; Uout: 1.3÷18VDC; DIP8; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 1.5A
Output voltage: 1.3...18V DC
Number of channels: 1
Mounting: THT
Operating voltage: 8.7...30V
Frequency: 0.6MHz
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; 8.7÷30V; Uout: 1.3÷18VDC; DIP8; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 1.5A
Output voltage: 1.3...18V DC
Number of channels: 1
Mounting: THT
Operating voltage: 8.7...30V
Frequency: 0.6MHz
Kind of package: tube
на замовлення 1742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.23 грн |
| 10+ | 39.93 грн |
| 25+ | 35.57 грн |
| 67+ | 33.39 грн |
| 500+ | 31.8 грн |
| BZX84C10LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 2850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.44 грн |
| 225+ | 1.74 грн |
| 500+ | 1.57 грн |
| 725+ | 1.2 грн |
| 1950+ | 1.14 грн |
| BC849CLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 4892 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 152+ | 2.58 грн |
| 265+ | 1.37 грн |
| 500+ | 1.15 грн |
| 854+ | 0.99 грн |
| 2347+ | 0.93 грн |
| MC14017BDG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; CMOS; SMD; SO16
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: decade counter
Case: SO16
Category: Counters/dividers
Description: IC: digital; decade counter; CMOS; SMD; SO16
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: decade counter
Case: SO16
на замовлення 129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 40.11 грн |
| 11+ | 34.34 грн |
| 32+ | 26.72 грн |
| 88+ | 25.26 грн |
| MC14017BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: decade counter
Case: SOIC16
Number of inputs: 3
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: decade counter
Case: SOIC16
Number of inputs: 3
товар відсутній
| FQD17P06TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.54 грн |
| 8+ | 47.62 грн |
| 24+ | 37.02 грн |
| 64+ | 34.85 грн |
| FQP17P06 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQU17P06TU |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 46.53 грн |
| 20+ | 42.18 грн |
| 23+ | 35.57 грн |
| 62+ | 33.39 грн |
| MMBZ5238B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; SMD; reel,tape; SOT23; single diode
Zener voltage: 8.7V
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; SMD; reel,tape; SOT23; single diode
Zener voltage: 8.7V
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 7.04 грн |
| MMBZ5238BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Zener voltage: 8.7V
Leakage current: 3µA
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
Zener current: 20mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Zener voltage: 8.7V
Leakage current: 3µA
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
Zener current: 20mA
товар відсутній
| MMSZ5238B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
на замовлення 925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 205+ | 1.94 грн |
| 215+ | 1.7 грн |
| MMSZ5238BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
на замовлення 3955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.36 грн |
| 124+ | 2.95 грн |
| 250+ | 2.37 грн |
| 403+ | 1.95 грн |
| 1107+ | 1.84 грн |
| 2SD1801S-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товар відсутній
| ESD7504MUTAG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.55pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.55pF
товар відсутній
| ESD8351XV2T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1
Mounting: SMD
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: SOD523
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1
Mounting: SMD
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: SOD523
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.02 грн |
| 80+ | 4.82 грн |
| 230+ | 3.7 грн |
| ESD9101P2T5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
товар відсутній
| ESD9C3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
товар відсутній
| ESDR0502NMUTAG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3
Kind of package: reel; tape
Number of channels: 3
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: uDFN6
Max. off-state voltage: 5.5V
Max. forward impulse current: 3A
Breakdown voltage: 6V
Leakage current: 1µA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3
Kind of package: reel; tape
Number of channels: 3
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: uDFN6
Max. off-state voltage: 5.5V
Max. forward impulse current: 3A
Breakdown voltage: 6V
Leakage current: 1µA
товар відсутній
| ESD7383NCTBG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 50W
Mounting: SMD
Case: WLCSP4
Max. off-state voltage: 3...5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 3
Kind of package: reel; tape
Capacitance: 1.5pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 50W
Mounting: SMD
Case: WLCSP4
Max. off-state voltage: 3...5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 3
Kind of package: reel; tape
Capacitance: 1.5pF
товар відсутній
| NTD24N06LT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDB024N06 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC74HC30ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
товар відсутній
| MC74HC30ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC30ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| NCV7356D1R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
товар відсутній
| MC14528BDG |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
товар відсутній
| MC14528BDR2G |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
товар відсутній
| FODM2701 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
на замовлення 1925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.29 грн |
| 12+ | 31.65 грн |
| 41+ | 20.67 грн |
| 112+ | 19.54 грн |
| 1000+ | 18.95 грн |
| FODM2701R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
товар відсутній
| 2SA2126-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Case: TO252
Polarisation: bipolar
Power dissipation: 0.8W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 3A
Current gain: 200...560
Collector-emitter voltage: 50V
Frequency: 390MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Case: TO252
Polarisation: bipolar
Power dissipation: 0.8W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 3A
Current gain: 200...560
Collector-emitter voltage: 50V
Frequency: 390MHz
товар відсутній
| 2SA2126-TL-H |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
на замовлення 1045 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 16+ | 23.38 грн |
| 25+ | 20.69 грн |
| 50+ | 17.06 грн |
| 138+ | 16.12 грн |
| NRVB230LSFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 40A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 40A
Application: automotive industry
товар відсутній
| FOD852300W |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Turn-on time: 0.1ms
Turn-off time: 20µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Turn-on time: 0.1ms
Turn-off time: 20µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 272 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.71 грн |
| 9+ | 43.56 грн |
| 23+ | 38.33 грн |
| 62+ | 36.22 грн |
| 100+ | 35.14 грн |
| MJD112-1G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Mounting: THT
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Case: IPAK
Collector-emitter voltage: 100V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Mounting: THT
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Case: IPAK
Collector-emitter voltage: 100V
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.98 грн |
| 8+ | 50.96 грн |
| 21+ | 41.74 грн |
| 57+ | 39.42 грн |