| Фото | Назва | Виробник | Інформація |
Доступність |
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| NCP752BMX28TCG | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.55V Output voltage: 2.8V Output current: 0.2A Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 |
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| NCP752BMX30TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.55V Output voltage: 3V Output current: 0.2A Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 |
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| NCP752BMX33TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.55V Output voltage: 3.3V Output current: 0.2A Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 |
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MMBZ5223BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 2.7V; SMD; reel,tape; SOT23; single diode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Leakage current: 75µA Power dissipation: 0.225W Type of diode: Zener |
на замовлення 5900 шт: термін постачання 21-30 дні (днів) |
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MMBZ5226BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 3.3V; SMD; reel,tape; SOT23; single diode Kind of package: reel; tape Power dissipation: 0.225W Mounting: SMD Case: SOT23 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.3V Leakage current: 25µA Type of diode: Zener |
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MMBZ5229BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.225W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 5975 шт: термін постачання 21-30 дні (днів) |
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MMBZ5235BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 6.8V; SMD; reel,tape; SOT23; single diode; 3uA Mounting: SMD Case: SOT23 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.8V Leakage current: 3µA Power dissipation: 0.225W Kind of package: reel; tape Type of diode: Zener |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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MMBZ5241BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 11V; SMD; reel,tape; SOT23; single diode; 2uA Power dissipation: 0.225W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 2µA Case: SOT23 Zener voltage: 11V Type of diode: Zener Tolerance: ±5% Mounting: SMD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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MMBZ5244BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 14V; SMD; reel,tape; SOT23; single diode Mounting: SMD Power dissipation: 0.225W Kind of package: reel; tape Type of diode: Zener Case: SOT23 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 14V Leakage current: 0.1µA |
на замовлення 5538 шт: термін постачання 21-30 дні (днів) |
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MMBZ5246BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 16V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.225W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1575 шт: термін постачання 21-30 дні (днів) |
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MMBZ5251BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 22V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOT23 Leakage current: 0.1µA Power dissipation: 0.225W Kind of package: reel; tape Tolerance: ±5% Zener voltage: 22V |
на замовлення 4622 шт: термін постачання 21-30 дні (днів) |
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FQD18N20V2TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.75A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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MMBD1201 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Mounting: SMD Capacitance: 2pF Max. off-state voltage: 100V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 2A Leakage current: 0.1mA Case: SOT23 Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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MMBD1204 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
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MMBD1205 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. off-state voltage: 100V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 4ns Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MMBD1501A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; SOT23; Ufmax: 1.15V; Ifsm: 2A Case: SOT23 Mounting: SMD Kind of package: reel; tape Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Type of diode: switching |
на замовлення 2755 шт: термін постачання 21-30 дні (днів) |
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MMBD1504A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
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MMBD1505A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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MMBD2837LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW Mounting: SMD Max. forward voltage: 1.2V Load current: 0.15A Semiconductor structure: common anode; double Reverse recovery time: 4ns Power dissipation: 0.225W Max. load current: 0.45A Kind of package: reel; tape Max. off-state voltage: 75V Type of diode: switching Capacitance: 4pF Case: SOT23 |
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MMBD301LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 200mA; SOT23; reel,tape; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 1.5pF Max. forward voltage: 0.6V Case: SOT23 Kind of package: reel; tape Power dissipation: 0.2W |
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| SBRB1545CTG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 7.5Ax2; D2PAK; tube Mounting: SMD Case: D2PAK Kind of package: tube Max. forward impulse current: 150A Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. load current: 15A Max. forward voltage: 0.84V Load current: 7.5A x2 Semiconductor structure: common cathode; double |
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2V7002KT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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2V7002LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.225W Polarisation: unipolar Drain current: 0.115A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 7.5Ω |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
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FDS4141 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 5W; SO8 Kind of package: reel; tape Mounting: SMD Power dissipation: 5W Gate charge: 35nC Polarisation: unipolar Technology: PowerTrench® Drain current: -10.8A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 13mΩ |
на замовлення 2356 шт: термін постачання 21-30 дні (днів) |
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RHRP15120 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 200A; TO220-2; 100W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: TO220-2 Max. forward voltage: 3.2V Heatsink thickness: max. 1.4mm Power dissipation: 100W Reverse recovery time: 65ns |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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MJE182G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 15W Case: TO225 Current gain: 12...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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| NL17SZ08DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape |
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| NL17SZ08XV5T2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT553; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
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NLV17SZ08DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
на замовлення 1896 шт: термін постачання 21-30 дні (днів) |
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CM1224-04SO | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23-6 Leakage current: 0.1µA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.225W Capacitance: 0.6...0.8pF Max. off-state voltage: 3.3...5V Breakdown voltage: 6V Number of channels: 4 |
на замовлення 1221 шт: термін постачання 21-30 дні (днів) |
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| NCP302035MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Case: PQFN31 5X5 Topology: MOSFET half-bridge Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4.5...5.5V DC Output current: 35A Type of integrated circuit: driver Impulse rise time: 12ns Pulse fall time: 6ns Kind of integrated circuit: gate driver; high-side; low-side |
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| NCP1126BP65G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 8.5÷35V; DIP7 Operating temperature: -40...125°C Mounting: SMD Kind of integrated circuit: AC/DC switcher; PWM controller Case: DIP7 Operating voltage: 8.5...35V Frequency: 61...71kHz On-state resistance: 5.4Ω Type of integrated circuit: PMIC Number of channels: 1 |
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| 74LCX126BQX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC Operating temperature: -40...85°C Manufacturer series: LCX Mounting: SMD Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Case: QFN14 Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 4 Quiescent current: 10µA |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 35A Case: CASE59 Reverse recovery time: 75ns |
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| NCP1521BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; TSOP5; buck Case: TSOP5 Mounting: SMD Frequency: 1.3...1.8MHz Output current: 600mA Operating temperature: -40...85°C Output voltage: 0.9...3.3V Topology: buck Input voltage: 2.7...5.5V Number of channels: 1 Type of integrated circuit: PMIC |
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| FDMC86260ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Pulsed drain current: 116A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS86255ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56 Kind of package: reel; tape Drain-source voltage: 150V Drain current: 44A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 276A Mounting: SMD Case: Power56 |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 2240 шт: термін постачання 21-30 дні (днів) |
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| HCPL0601R2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 3.75kV Case: SO8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 10kV/μs |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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FQPF85N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 37.5A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhanced |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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2N7002ET1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 5599 шт: термін постачання 21-30 дні (днів) |
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2N7002ET7G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2070 шт: термін постачання 21-30 дні (днів) |
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FDD8424H | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of package: reel; tape Mounting: SMD Power dissipation: 3.1W Gate charge: 20/24nC Polarisation: unipolar Technology: PowerTrench® Drain current: 20/20A Kind of channel: enhanced Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20/±20V Semiconductor structure: common drain Case: TO252-4 On-state resistance: 37/80mΩ |
на замовлення 813 шт: термін постачання 21-30 дні (днів) |
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FDV305N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 303mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 8940 шт: термін постачання 21-30 дні (днів) |
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FDC6305N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 128mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1788 шт: термін постачання 21-30 дні (днів) |
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| 74AUP1G98L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 800mV DC...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
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NCP1392DDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V Case: SO8 Topology: MOSFET half-bridge Operating temperature: -40...125°C Voltage class: 600V Mounting: SMD Supply voltage: 8...17.5V DC Output current: -1A...500mA Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 20ns |
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4N27M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 10%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
на замовлення 809 шт: термін постачання 21-30 дні (днів) |
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MC74AC32DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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| MC74AC32DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
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| MC74AC32DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
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| MRS1504T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A Mounting: SMD Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 50A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. load current: 3A Max. forward voltage: 1.02V Load current: 1.5A |
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1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 16V; 23.4mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Zener current: 23.4mA Mounting: SMD Tolerance: ±5% Zener resistance: 10Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 2319 шт: термін постачання 21-30 дні (днів) |
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MUN5215T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
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BSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 670 шт: термін постачання 21-30 дні (днів) |
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
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| RSL10-SENSE-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation |
товар відсутній |
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DTC124EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 4425 шт: термін постачання 21-30 дні (днів) |
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BZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 2575 шт: термін постачання 21-30 дні (днів) |
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| NCP752BMX28TCG |
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Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
товар відсутній
| NCP752BMX30TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 3V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 3V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
товар відсутній
| NCP752BMX33TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 3.3V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 3.3V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
товар відсутній
| MMBZ5223BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 2.7V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Leakage current: 75µA
Power dissipation: 0.225W
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 2.7V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Leakage current: 75µA
Power dissipation: 0.225W
Type of diode: Zener
на замовлення 5900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.63 грн |
| 250+ | 1.59 грн |
| 500+ | 1.44 грн |
| 775+ | 1.11 грн |
| 2075+ | 1.05 грн |
| MMBZ5226BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 3.3V; SMD; reel,tape; SOT23; single diode
Kind of package: reel; tape
Power dissipation: 0.225W
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 25µA
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 3.3V; SMD; reel,tape; SOT23; single diode
Kind of package: reel; tape
Power dissipation: 0.225W
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 25µA
Type of diode: Zener
товар відсутній
| MMBZ5229BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 149+ | 2.63 грн |
| 229+ | 1.59 грн |
| 500+ | 1.44 грн |
| 719+ | 1.19 грн |
| 1976+ | 1.13 грн |
| MMBZ5235BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 6.8V; SMD; reel,tape; SOT23; single diode; 3uA
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Leakage current: 3µA
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 6.8V; SMD; reel,tape; SOT23; single diode; 3uA
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Leakage current: 3µA
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.66 грн |
| 225+ | 1.68 грн |
| 500+ | 1.51 грн |
| 750+ | 1.16 грн |
| 2000+ | 1.1 грн |
| MMBZ5241BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Power dissipation: 0.225W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 2µA
Case: SOT23
Zener voltage: 11V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Power dissipation: 0.225W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 2µA
Case: SOT23
Zener voltage: 11V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.54 грн |
| 200+ | 1.98 грн |
| 500+ | 1.79 грн |
| 650+ | 1.31 грн |
| 1775+ | 1.24 грн |
| MMBZ5244BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 14V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 14V
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 14V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 14V
Leakage current: 0.1µA
на замовлення 5538 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 165+ | 2.38 грн |
| 250+ | 1.45 грн |
| 500+ | 1.31 грн |
| 811+ | 1.03 грн |
| 2227+ | 0.97 грн |
| MMBZ5246BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 16V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 149+ | 2.63 грн |
| 229+ | 1.59 грн |
| 500+ | 1.44 грн |
| 696+ | 1.21 грн |
| MMBZ5251BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Leakage current: 0.1µA
Power dissipation: 0.225W
Kind of package: reel; tape
Tolerance: ±5%
Zener voltage: 22V
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Leakage current: 0.1µA
Power dissipation: 0.225W
Kind of package: reel; tape
Tolerance: ±5%
Zener voltage: 22V
на замовлення 4622 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 157+ | 2.5 грн |
| 239+ | 1.52 грн |
| 500+ | 1.37 грн |
| 788+ | 1 грн |
| 2167+ | 0.94 грн |
| FQD18N20V2TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMBD1201 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Capacitance: 2pF
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 0.1mA
Case: SOT23
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Mounting: SMD
Capacitance: 2pF
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 0.1mA
Case: SOT23
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
на замовлення 540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.74 грн |
| 180+ | 2.12 грн |
| 500+ | 1.73 грн |
| MMBD1204 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
товар відсутній
| MMBD1205 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.45 грн |
| MMBD1501A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; SOT23; Ufmax: 1.15V; Ifsm: 2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; SOT23; Ufmax: 1.15V; Ifsm: 2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Type of diode: switching
на замовлення 2755 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.79 грн |
| 90+ | 4.05 грн |
| 250+ | 3.65 грн |
| 300+ | 2.79 грн |
| 825+ | 2.64 грн |
| MMBD1504A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
товар відсутній
| MMBD1505A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 7.27 грн |
| 75+ | 5.1 грн |
| 210+ | 4.03 грн |
| MMBD2837LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Mounting: SMD
Max. forward voltage: 1.2V
Load current: 0.15A
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Power dissipation: 0.225W
Max. load current: 0.45A
Kind of package: reel; tape
Max. off-state voltage: 75V
Type of diode: switching
Capacitance: 4pF
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Mounting: SMD
Max. forward voltage: 1.2V
Load current: 0.15A
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Power dissipation: 0.225W
Max. load current: 0.45A
Kind of package: reel; tape
Max. off-state voltage: 75V
Type of diode: switching
Capacitance: 4pF
Case: SOT23
товар відсутній
| MMBD301LT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 200mA; SOT23; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 200mA; SOT23; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.2W
товар відсутній
| SBRB1545CTG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 7.5Ax2; D2PAK; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 150A
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. load current: 15A
Max. forward voltage: 0.84V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 7.5Ax2; D2PAK; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 150A
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. load current: 15A
Max. forward voltage: 0.84V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
товар відсутній
| 2V7002KT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 2V7002LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.115A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 7.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.115A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 7.5Ω
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.95 грн |
| 70+ | 5.21 грн |
| 100+ | 4.61 грн |
| 210+ | 4 грн |
| 580+ | 3.78 грн |
| FDS4141 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 5W
Gate charge: 35nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -10.8A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 13mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 5W
Gate charge: 35nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -10.8A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 13mΩ
на замовлення 2356 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.32 грн |
| 7+ | 56.41 грн |
| 21+ | 39.49 грн |
| 58+ | 37.34 грн |
| RHRP15120 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 200A; TO220-2; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220-2
Max. forward voltage: 3.2V
Heatsink thickness: max. 1.4mm
Power dissipation: 100W
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 200A; TO220-2; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220-2
Max. forward voltage: 3.2V
Heatsink thickness: max. 1.4mm
Power dissipation: 100W
Reverse recovery time: 65ns
на замовлення 116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.65 грн |
| 10+ | 79.85 грн |
| 28+ | 75.5 грн |
| MJE182G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 15W
Case: TO225
Current gain: 12...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 15W
Case: TO225
Current gain: 12...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.91 грн |
| 14+ | 27.51 грн |
| 25+ | 24.83 грн |
| 47+ | 18.08 грн |
| 129+ | 17.06 грн |
| NL17SZ08DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
товар відсутній
| NL17SZ08XV5T2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT553; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT553; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
товар відсутній
| NLV17SZ08DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 1896 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.21 грн |
| 25+ | 16.84 грн |
| 100+ | 12.63 грн |
| 130+ | 6.53 грн |
| 358+ | 6.17 грн |
| CM1224-04SO |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-6
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 0.6...0.8pF
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6V
Number of channels: 4
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-6
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 0.6...0.8pF
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6V
Number of channels: 4
на замовлення 1221 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.63 грн |
| 12+ | 31.8 грн |
| 25+ | 28.82 грн |
| 36+ | 23.23 грн |
| 100+ | 21.78 грн |
| NCP302035MNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 35A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 35A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
товар відсутній
| NCP1126BP65G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.5÷35V; DIP7
Operating temperature: -40...125°C
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP7
Operating voltage: 8.5...35V
Frequency: 61...71kHz
On-state resistance: 5.4Ω
Type of integrated circuit: PMIC
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.5÷35V; DIP7
Operating temperature: -40...125°C
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP7
Operating voltage: 8.5...35V
Frequency: 61...71kHz
On-state resistance: 5.4Ω
Type of integrated circuit: PMIC
Number of channels: 1
товар відсутній
| 74LCX126BQX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC
Operating temperature: -40...85°C
Manufacturer series: LCX
Mounting: SMD
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Case: QFN14
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC
Operating temperature: -40...85°C
Manufacturer series: LCX
Mounting: SMD
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Case: QFN14
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
товар відсутній
| MUR1100ERLG | |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
товар відсутній
| NCP1521BSNT1G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; TSOP5; buck
Case: TSOP5
Mounting: SMD
Frequency: 1.3...1.8MHz
Output current: 600mA
Operating temperature: -40...85°C
Output voltage: 0.9...3.3V
Topology: buck
Input voltage: 2.7...5.5V
Number of channels: 1
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; TSOP5; buck
Case: TSOP5
Mounting: SMD
Frequency: 1.3...1.8MHz
Output current: 600mA
Operating temperature: -40...85°C
Output voltage: 0.9...3.3V
Topology: buck
Input voltage: 2.7...5.5V
Number of channels: 1
Type of integrated circuit: PMIC
товар відсутній
| FDMC86260ET150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS86255ET150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 44A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 44A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: Power56
товар відсутній
| FDN327N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 2240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.42 грн |
| 29+ | 12.7 грн |
| 32+ | 11.47 грн |
| 85+ | 9.87 грн |
| 233+ | 9.29 грн |
| 500+ | 9.07 грн |
| 1000+ | 9 грн |
| HCPL0601R2 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
товар відсутній
| FDP075N15A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 498.78 грн |
| 3+ | 323.77 грн |
| 8+ | 306.35 грн |
| FQPF85N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37.5A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37.5A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.58 грн |
| 3+ | 164.79 грн |
| 7+ | 127.04 грн |
| 19+ | 120.51 грн |
| 2N7002ET1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 5599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.51 грн |
| 50+ | 7.4 грн |
| 72+ | 5.05 грн |
| 100+ | 4.29 грн |
| 413+ | 2.07 грн |
| 500+ | 2.06 грн |
| 1136+ | 1.95 грн |
| 2N7002ET7G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.04 грн |
| 71+ | 5.15 грн |
| 106+ | 3.44 грн |
| 126+ | 2.88 грн |
| 250+ | 2.32 грн |
| 500+ | 2.02 грн |
| 604+ | 1.42 грн |
| 1659+ | 1.34 грн |
| FDD8424H |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 20/24nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20/20A
Kind of channel: enhanced
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20/±20V
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 37/80mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 20/24nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20/20A
Kind of channel: enhanced
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20/±20V
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 37/80mΩ
на замовлення 813 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.74 грн |
| 5+ | 74.77 грн |
| 17+ | 50.09 грн |
| 46+ | 47.19 грн |
| FDV305N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 8940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.7 грн |
| 38+ | 9.58 грн |
| 100+ | 8.49 грн |
| 115+ | 6.98 грн |
| 315+ | 6.61 грн |
| FDC6305N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.87 грн |
| 48+ | 17.77 грн |
| 132+ | 16.81 грн |
| 74AUP1G98L6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 800mV DC...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 800mV DC...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| NCP1392DDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Mounting: SMD
Supply voltage: 8...17.5V DC
Output current: -1A...500mA
Type of integrated circuit: driver
Impulse rise time: 40ns
Pulse fall time: 20ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Mounting: SMD
Supply voltage: 8...17.5V DC
Output current: -1A...500mA
Type of integrated circuit: driver
Impulse rise time: 40ns
Pulse fall time: 20ns
товар відсутній
| 4N27M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 809 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.31 грн |
| 16+ | 24.1 грн |
| 50+ | 19.17 грн |
| 65+ | 13.28 грн |
| 177+ | 12.56 грн |
| MC74AC32DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
на замовлення 353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 40.42 грн |
| 12+ | 32.01 грн |
| 25+ | 27.3 грн |
| 38+ | 22.14 грн |
| 105+ | 20.98 грн |
| MC74AC32DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
товар відсутній
| MC74AC32DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
товар відсутній
| MRS1504T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 50A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. load current: 3A
Max. forward voltage: 1.02V
Load current: 1.5A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 50A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. load current: 3A
Max. forward voltage: 1.02V
Load current: 1.5A
товар відсутній
| 1SMB5930BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 23.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 23.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 10Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 23.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 23.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 10Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 2319 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.04 грн |
| 45+ | 8.86 грн |
| 100+ | 7.04 грн |
| 135+ | 6.46 грн |
| 365+ | 6.1 грн |
| MUN5215T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
товар відсутній
| BSP52T1G | |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 19.23 грн |
| 30+ | 13.21 грн |
| 85+ | 10.09 грн |
| 230+ | 9.51 грн |
| BSP52T3G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| RSL10-SENSE-GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
товар відсутній
| DTC124EET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 4425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.72 грн |
| 175+ | 2.28 грн |
| 500+ | 1.75 грн |
| 1350+ | 1.65 грн |
| BZX84C18LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 2575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.28 грн |
| 275+ | 1.41 грн |
| 500+ | 1.27 грн |
| 850+ | 1.02 грн |
| 2325+ | 0.96 грн |