| Фото | Назва | Виробник | Інформація |
Доступність |
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MJH11017G | ONSEMI |
 Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 150V; 15A; 150W; TO247-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 150V Collector current: 15A Power dissipation: 150W Case: TO247-3 Mounting: THT Kind of package: tube Frequency: 3MHz |
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MMSZ5265BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Zener voltage: 62V Power dissipation: 0.5W |
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NSD914XV2T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 0.5A Semiconductor structure: single diode Max. off-state voltage: 100V Max. forward impulse current: 0.5A Case: SOD523F Mounting: SMD Kind of package: reel; tape Load current: 0.2A Type of diode: switching Max. forward voltage: 1V Reverse recovery time: 4ns |
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MCT62S | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V Mounting: SMD Case: Gull wing 8 CTR@If: 100%@5mA Number of channels: 2 Collector-emitter voltage: 85V Insulation voltage: 5.3kV Type of optocoupler: optocoupler Kind of output: transistor |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
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H11L2M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Mounting: THT Manufacturer series: H11LXM Insulation voltage: 4.17kV Kind of output: Schmitt trigger Number of channels: 1 Turn-off time: 4µs Turn-on time: 4µs Type of optocoupler: optocoupler Case: DIP6 |
на замовлення 477 шт: термін постачання 21-30 дні (днів) |
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MBR60H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Max. load current: 60A Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. forward impulse current: 350A Max. forward voltage: 0.81V |
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MBR60L45CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Max. load current: 60A Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. forward impulse current: 200A Max. forward voltage: 0.76V |
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.225A Power dissipation: 0.28W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| FOD8321 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs Mounting: SMD Case: SOP5 Slew rate: 50kV/μs Type of optocoupler: optocoupler Max. off-state voltage: 5V Turn-on time: 60ns Turn-off time: 60ns Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV |
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| FDMD86100 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 299A; 33W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 299A Power dissipation: 33W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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50C02CH-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.7W Case: SOT23 Current gain: 300...800 Mounting: SMD Kind of package: reel; tape Frequency: 500MHz |
на замовлення 1925 шт: термін постачання 21-30 дні (днів) |
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BDV64BG | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Mounting: THT Power dissipation: 125W Case: TO247-3 Kind of package: tube Collector-emitter voltage: 100V Collector current: 10A Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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BZX84C9V1LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 2250 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C9V1LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.5µA |
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| FDMS3672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 30A Power dissipation: 78W Case: Power56 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
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| CAT24C04C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C04WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C04YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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FQP11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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FQP13N06L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.6A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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FQP13N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.05A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhanced |
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FQP14N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 9.1A Pulsed drain current: 57.6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 290mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
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FQP15P12 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Drain current: -10.6A Pulsed drain current: -60A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 200mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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FQP16N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 10A Pulsed drain current: 64A Power dissipation: 142W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
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NCP81071ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
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| NCP81071AMNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
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| NCP81071AZR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
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NCP81071BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
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| NCP81071BMNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting |
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| NCP81071BZR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting |
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NCP81071CDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
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| NCP81071CMNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
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| NCP81071CZR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
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NLVHC259ADR2G | ONSEMI |
Category: Latches Description: IC: digital; 1 to 8 line,8bit,decoder,latch; Ch: 1; IN: 6; CMOS Type of integrated circuit: digital Kind of integrated circuit: 1 to 8 line; 8bit; decoder; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
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| NLX1G74MUTCG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Number of inputs: 4 Technology: CMOS Manufacturer series: MiniGate Mounting: SMD Case: UQFN8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NLX |
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| NLVX1G74MUTCG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: UQFN8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Quiescent current: 10µA |
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MC14007UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: complementary pair Kind of gate: combination; NOT Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 30µA |
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MC14007UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: complementary pair Kind of gate: combination; NOT Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 30µA |
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MC79M15CDTRKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
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| BAT54CXV3T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC89; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Case: SC89 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.24W |
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SBAT54CTT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC70; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Case: SC70 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
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MBR160G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; bulk; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Case: DO41 Kind of package: bulk |
на замовлення 1780 шт: термін постачання 21-30 дні (днів) |
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| CAT93C46BHU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 4MHz Kind of interface: serial Memory: 1kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: Microwire Kind of memory: EEPROM Memory organisation: 128x8/64x16bit Access time: 250ns |
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| CAT93C46BVI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Clock frequency: 4MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAT93C46BYI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Clock frequency: 4MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| NCP133AMX090TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Input voltage: 0.8...5.5V Output voltage: 0.9V Output current: 0.5A Mounting: SMD Case: XDFN6 Number of channels: 1 Operating temperature: -40...85°C Tolerance: ±1.5% Voltage drop: 0.25V Manufacturer series: NCP133 |
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| NCP133AMX105TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 500mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Input voltage: 0.8...5.5V Output voltage: 1.05V Output current: 0.5A Mounting: SMD Case: XDFN6 Number of channels: 1 Operating temperature: -40...85°C Tolerance: ±1.5% Voltage drop: 0.25V Manufacturer series: NCP133 |
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| NCP133AMX115TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 500mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Input voltage: 0.8...5.5V Output voltage: 1.15V Output current: 0.5A Mounting: SMD Case: XDFN6 Number of channels: 1 Operating temperature: -40...85°C Tolerance: ±1.5% Voltage drop: 0.25V Manufacturer series: NCP133 |
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| NCP133AMX120TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 1.2V Output current: 0.5A Case: XDFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 0.8...5.5V Manufacturer series: NCP133 |
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| NCP133AMXADJTCG | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Input voltage: 0.8...5.5V Output voltage: 0.8...3.6V Output current: 0.5A Mounting: SMD Case: XDFN6 Number of channels: 1 Operating temperature: -40...85°C Tolerance: ±1.5% Voltage drop: 0.25V Manufacturer series: NCP133 |
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| NCP3133AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 2.9÷5.5V; QFN16 3x3; buck Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.9...5.5V Topology: buck Case: QFN16 3x3 Frequency: 0.99...1.21MHz |
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| FDH3632 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.8A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| FDP7030BL | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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2SA2012-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Kind of package: reel; tape Frequency: 350MHz Collector-emitter voltage: 30V Current gain: 200...560 Collector current: 5A Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Mounting: SMD Case: SOT89 |
на замовлення 874 шт: термін постачання 21-30 дні (днів) |
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2SA2013-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 4A; 3.5W; SOT89 Kind of package: reel; tape Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 4A Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Mounting: SMD Case: SOT89 |
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2SA2016-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 7A; 3.5W; SOT89 Kind of package: reel; tape Frequency: 290MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 7A Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Mounting: SMD Case: SOT89 |
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2SA2153-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 3.5W; SOT89 Mounting: SMD Case: SOT89 Polarisation: bipolar Power dissipation: 3.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 2A Current gain: 40...560 Collector-emitter voltage: 50V Frequency: 420MHz |
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2SA2202-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 3.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 3.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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2SC5964-TD-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 3.5W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 380MHz |
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2SB1123S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товар відсутній |
| MJH11017G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 150V; 15A; 150W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 150V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 150V; 15A; 150W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 150V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товар відсутній
| MMSZ5265BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 62V
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 62V
Power dissipation: 0.5W
товар відсутній
| NSD914XV2T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 0.5A
Semiconductor structure: single diode
Max. off-state voltage: 100V
Max. forward impulse current: 0.5A
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Load current: 0.2A
Type of diode: switching
Max. forward voltage: 1V
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 0.5A
Semiconductor structure: single diode
Max. off-state voltage: 100V
Max. forward impulse current: 0.5A
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Load current: 0.2A
Type of diode: switching
Max. forward voltage: 1V
Reverse recovery time: 4ns
товар відсутній
| MCT62S |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Mounting: SMD
Case: Gull wing 8
CTR@If: 100%@5mA
Number of channels: 2
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Mounting: SMD
Case: Gull wing 8
CTR@If: 100%@5mA
Number of channels: 2
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Type of optocoupler: optocoupler
Kind of output: transistor
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 8+ | 45.88 грн |
| 25+ | 34.48 грн |
| 29+ | 29.11 грн |
| 80+ | 27.59 грн |
| H11L2M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Insulation voltage: 4.17kV
Kind of output: Schmitt trigger
Number of channels: 1
Turn-off time: 4µs
Turn-on time: 4µs
Type of optocoupler: optocoupler
Case: DIP6
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Insulation voltage: 4.17kV
Kind of output: Schmitt trigger
Number of channels: 1
Turn-off time: 4µs
Turn-on time: 4µs
Type of optocoupler: optocoupler
Case: DIP6
на замовлення 477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.82 грн |
| 6+ | 63.45 грн |
| 21+ | 41.92 грн |
| 56+ | 39.63 грн |
| MBR60H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 350A
Max. forward voltage: 0.81V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 350A
Max. forward voltage: 0.81V
товар відсутній
| MBR60L45CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 200A
Max. forward voltage: 0.76V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 200A
Max. forward voltage: 0.76V
товар відсутній
| NTZD5110NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| FOD8321 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Mounting: SMD
Case: SOP5
Slew rate: 50kV/μs
Type of optocoupler: optocoupler
Max. off-state voltage: 5V
Turn-on time: 60ns
Turn-off time: 60ns
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Mounting: SMD
Case: SOP5
Slew rate: 50kV/μs
Type of optocoupler: optocoupler
Max. off-state voltage: 5V
Turn-on time: 60ns
Turn-off time: 60ns
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
товар відсутній
| FDMD86100 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 299A; 33W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 299A
Power dissipation: 33W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 299A; 33W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 299A
Power dissipation: 33W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 50C02CH-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: SOT23
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: SOT23
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
на замовлення 1925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.79 грн |
| 30+ | 13.21 грн |
| 85+ | 10.45 грн |
| 225+ | 9.95 грн |
| BDV64BG |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Mounting: THT
Power dissipation: 125W
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 100V
Collector current: 10A
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Mounting: THT
Power dissipation: 125W
Case: TO247-3
Kind of package: tube
Collector-emitter voltage: 100V
Collector current: 10A
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 267 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.05 грн |
| 5+ | 166.24 грн |
| 7+ | 129.95 грн |
| 19+ | 122.69 грн |
| BZX84C9V1LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 2250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.38 грн |
| 59+ | 6.17 грн |
| 96+ | 3.8 грн |
| 132+ | 2.76 грн |
| 250+ | 2.42 грн |
| 500+ | 2.13 грн |
| 746+ | 1.14 грн |
| 2051+ | 1.08 грн |
| SZBZX84C9V1LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| FDMS3672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CAT24C04C4ATR |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C04WI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C04YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| FQP11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.23 грн |
| 10+ | 86.39 грн |
| 28+ | 81.31 грн |
| FQP13N06L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.6A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.6A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.74 грн |
| FQP13N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.05A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.05A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQP14N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQP15P12 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQP16N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP81071ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
товар відсутній
| NCP81071AMNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
товар відсутній
| NCP81071AZR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
товар відсутній
| NCP81071BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
товар відсутній
| NCP81071BMNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
товар відсутній
| NCP81071BZR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
товар відсутній
| NCP81071CDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
товар відсутній
| NCP81071CMNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
товар відсутній
| NCP81071CZR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
товар відсутній
| NLVHC259ADR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 1 to 8 line,8bit,decoder,latch; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1 to 8 line; 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Latches
Description: IC: digital; 1 to 8 line,8bit,decoder,latch; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1 to 8 line; 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| NLX1G74MUTCG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Manufacturer series: MiniGate
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NLX
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Manufacturer series: MiniGate
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NLX
товар відсутній
| NLVX1G74MUTCG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 10µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 10µA
товар відсутній
| MC14007UBDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
товар відсутній
| MC14007UBDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
товар відсутній
| MC79M15CDTRKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
товар відсутній
| BAT54CXV3T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC89; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SC89
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC89; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SC89
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
товар відсутній
| SBAT54CTT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC70; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SC70
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC70; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SC70
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
товар відсутній
| MBR160G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; bulk; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: DO41
Kind of package: bulk
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; bulk; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: DO41
Kind of package: bulk
на замовлення 1780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.92 грн |
| 35+ | 11.62 грн |
| 95+ | 8.86 грн |
| 265+ | 8.35 грн |
| CAT93C46BHU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 4MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: Microwire
Kind of memory: EEPROM
Memory organisation: 128x8/64x16bit
Access time: 250ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 4MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: Microwire
Kind of memory: EEPROM
Memory organisation: 128x8/64x16bit
Access time: 250ns
товар відсутній
| CAT93C46BVI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT93C46BYI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| NCP133AMX090TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 0.9V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 0.9V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
товар відсутній
| NCP133AMX105TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 1.05V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 1.05V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
товар відсутній
| NCP133AMX115TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 1.15V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 1.15V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
товар відсутній
| NCP133AMX120TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.2V
Output current: 0.5A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 0.8...5.5V
Manufacturer series: NCP133
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.2V
Output current: 0.5A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 0.8...5.5V
Manufacturer series: NCP133
товар відсутній
| NCP133AMXADJTCG |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 0.8...3.6V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 0.8...5.5V
Output voltage: 0.8...3.6V
Output current: 0.5A
Mounting: SMD
Case: XDFN6
Number of channels: 1
Operating temperature: -40...85°C
Tolerance: ±1.5%
Voltage drop: 0.25V
Manufacturer series: NCP133
товар відсутній
| NCP3133AMNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.9÷5.5V; QFN16 3x3; buck
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.9...5.5V
Topology: buck
Case: QFN16 3x3
Frequency: 0.99...1.21MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.9÷5.5V; QFN16 3x3; buck
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.9...5.5V
Topology: buck
Case: QFN16 3x3
Frequency: 0.99...1.21MHz
товар відсутній
| FDH3632 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDP7030BL |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 2SA2012-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Kind of package: reel; tape
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Kind of package: reel; tape
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Mounting: SMD
Case: SOT89
на замовлення 874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.27 грн |
| 25+ | 31.36 грн |
| 36+ | 24.17 грн |
| 97+ | 22.87 грн |
| 2SA2013-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 3.5W; SOT89
Kind of package: reel; tape
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 3.5W; SOT89
Kind of package: reel; tape
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Mounting: SMD
Case: SOT89
товар відсутній
| 2SA2016-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 3.5W; SOT89
Kind of package: reel; tape
Frequency: 290MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 7A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 3.5W; SOT89
Kind of package: reel; tape
Frequency: 290MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 7A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Mounting: SMD
Case: SOT89
товар відсутній
| 2SA2153-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 40...560
Collector-emitter voltage: 50V
Frequency: 420MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 40...560
Collector-emitter voltage: 50V
Frequency: 420MHz
товар відсутній
| 2SA2202-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 3.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 3.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| 2SC5964-TD-H |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
товар відсутній
| 2SB1123S-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товар відсутній