| Фото | Назва | Виробник | Інформація |
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2SB1123T-TD-E | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
на замовлення 815 шт: термін постачання 21-30 дні (днів) |
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| RSL10-002GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Type of development kit: evaluation Kit contents: prototype board Components: RSL10 Programmers and development kits features: Bluetooth board Interface: GPIO; I2C; SPI; UART Kind of connector: pin strips; pin strips; Pmod socket; USB micro |
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74VHC123AM | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Manufacturer series: VHC Operating temperature: -40...85°C |
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74VHC123AMTC | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 40µA |
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74VHC123AMTCX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Operating temperature: -40...85°C |
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74VHC123AMX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Manufacturer series: VHC Operating temperature: -40...85°C |
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| NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V |
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| NLASB3157MTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT Type of integrated circuit: analog switch Number of channels: 1 Case: WDFN6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: SPDT Quiescent current: 10µA Technology: CMOS |
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NC7SBU3157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC70 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 10µA Technology: CMOS |
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NLVASB3157DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC88A Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of output: SPDT Application: automotive industry |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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NTR4003NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 0.56A On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.15nC Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 3147 шт: термін постачання 21-30 дні (днів) |
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MM5Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
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M74VHC1GT125DF1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
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MBRD650CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Max. load current: 6A Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Case: DPAK Kind of package: reel; tape |
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MC100EPT22DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
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MC100EPT22DTG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
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BAT54HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: single diode Capacitance: 7.6pF Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
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| HCPL2611M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 30ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7V Manufacturer series: HCPL2611M |
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MBRD660CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Max. load current: 6A Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Case: DPAK Kind of package: reel; tape |
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MBR735G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 7.5A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 7.5A Max. load current: 7.5A Semiconductor structure: single diode Max. forward voltage: 0.57V Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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MBR1080G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.85V Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
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MBR1100G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; bulk; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: bulk Max. forward impulse current: 50A Max. forward voltage: 0.79V |
на замовлення 685 шт: термін постачання 21-30 дні (днів) |
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| MC14518BDWG | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: tube Technology: CMOS Kind of integrated circuit: BCD; up counter Case: SO16WB Number of inputs: 3 Type of integrated circuit: digital Number of channels: 2 |
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| MC14518BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: BCD; up counter Case: SO16WB Number of inputs: 3 Type of integrated circuit: digital Number of channels: 2 |
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BAV74LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 3600 шт: термін постачання 21-30 дні (днів) |
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KSD560YTU | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 1.5W Case: TO220AB Mounting: THT Kind of package: tube |
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NCV7342D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Mounting: SMD Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: transceiver Case: SO8 Type of integrated circuit: interface |
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NCV7342D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Supply voltage: 4.5...5.5V DC Mounting: SMD Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: transceiver Case: SO8 Type of integrated circuit: interface |
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HUF75344G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhanced |
на замовлення 282 шт: термін постачання 21-30 дні (днів) |
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| NCP156AAFCT120280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA Manufacturer series: NCP156 Output voltage: 1.2V; 2.8V Output current: 250...500mA Type of integrated circuit: voltage regulator Number of channels: 2 Input voltage: 0.8...3.6V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: WLCSP6 Tolerance: ±1% |
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Case: SMB Kind of package: reel; tape |
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| FDMS7620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 13/22A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 30/15.1mΩ Mounting: SMD Gate charge: 11/23nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS9620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 16/18A Pulsed drain current: 60A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±20V On-state resistance: 32/22mΩ Mounting: SMD Gate charge: 14/25nC Kind of package: reel; tape Kind of channel: enhanced |
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FQA70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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FQB11N40CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 135W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB12P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB19N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 76A Drain-source voltage: 200V Drain current: 12.1A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 53nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V |
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FQB19N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 84A Drain-source voltage: 200V Drain current: 13.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 35nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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FQB19N20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 78A Drain-source voltage: 200V Drain current: 12.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 40nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V |
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FQB1P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -0.95A Power dissipation: 63W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 10.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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FQB22P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -15.6A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB34N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB34N20TM-AM002 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 124A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB34P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 664 шт: термін постачання 21-30 дні (днів) |
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FQB34P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Pulsed drain current: -134A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| FQB44N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30.8A Power dissipation: 146W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: WQFN24 Integrated circuit features: PWM |
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| PCA9535EDWR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: SO24 Integrated circuit features: PWM |
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NCV7344AD10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
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NCV7344D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
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NCV7344D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
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FXL4TD245BQX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Mounting: SMD Case: DQFN16 Supply voltage: 1.1...3.6V DC Operating temperature: -40...85°C Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Kind of package: reel; tape |
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| 74AUP1T97FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Technology: CMOS Case: uDFN6 Mounting: SMD Kind of package: reel; tape Manufacturer series: AUP Operating temperature: -40...85°C Kind of input: with Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator Family: AUP Number of inputs: 3 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 |
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| 74AUP1T97L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SIP6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
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FL7760AM6X | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 8...70V Output current: -2.5...1.5A Case: SOT23-6 Mounting: SMD Frequency: 1MHz Topology: buck Number of channels: 1 Kind of package: reel; tape Integrated circuit features: linear dimming; PWM Application: for LED applications |
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MMSZ6V8T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 4822 шт: термін постачання 21-30 дні (днів) |
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HCPL2531M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Max. off-state voltage: 5V Output voltage: -500mV...20V Manufacturer series: HCPL2531M |
на замовлення 672 шт: термін постачання 21-30 дні (днів) |
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HCPL2531SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: Gull wing 8 Slew rate: 10kV/μs |
на замовлення 323 шт: термін постачання 21-30 дні (днів) |
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| 2SB1123T-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 815 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.49 грн |
| 16+ | 23.96 грн |
| 68+ | 12.56 грн |
| 187+ | 11.83 грн |
| RSL10-002GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Kit contents: prototype board
Components: RSL10
Programmers and development kits features: Bluetooth board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Kit contents: prototype board
Components: RSL10
Programmers and development kits features: Bluetooth board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
товар відсутній
| 74VHC123AM |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
товар відсутній
| 74VHC123AMTC |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
товар відсутній
| 74VHC123AMTCX |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
товар відсутній
| 74VHC123AMX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
товар відсутній
| NLAS3157MX3TCG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
товар відсутній
| NTJS3157NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
| NLASB3157MTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
товар відсутній
| NC7SBU3157P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
товар відсутній
| NLVASB3157DFT2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.66 грн |
| 25+ | 17.64 грн |
| 59+ | 14.14 грн |
| 162+ | 13.37 грн |
| NTR4003NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 0.56A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 0.56A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 3147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.38 грн |
| 100+ | 3.65 грн |
| 300+ | 2.82 грн |
| 825+ | 2.67 грн |
| MM5Z12VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
товар відсутній
| M74VHC1GT125DF1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
товар відсутній
| MBRD650CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
товар відсутній
| MC100EPT22DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
товар відсутній
| MC100EPT22DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
товар відсутній
| BAT54HT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 7.6pF
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 7.6pF
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
товар відсутній
| HCPL2611M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2611M
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2611M
товар відсутній
| MBRD660CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
товар відсутній
| MBR735G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 7.5A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 7.5A
Max. load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 7.5A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 7.5A
Max. load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.16 грн |
| 7+ | 52.34 грн |
| MBR1080G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
товар відсутній
| MBR1100G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; bulk; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; bulk; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
на замовлення 685 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.67 грн |
| 27+ | 13.94 грн |
| 77+ | 11.03 грн |
| 212+ | 10.38 грн |
| MC14518BDWG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| MC14518BDWR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| BAV74LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 3600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.63 грн |
| 250+ | 1.45 грн |
| 500+ | 1.31 грн |
| 825+ | 1.05 грн |
| 2225+ | 0.99 грн |
| KSD560YTU |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| NCV7342D10R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
товар відсутній
| NCV7342D13R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
товар відсутній
| HUF75344G3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.41 грн |
| 5+ | 177.13 грн |
| 14+ | 167.69 грн |
| NCP156AAFCT120280T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Manufacturer series: NCP156
Output voltage: 1.2V; 2.8V
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 0.8...3.6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP6
Tolerance: ±1%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Manufacturer series: NCP156
Output voltage: 1.2V; 2.8V
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 0.8...3.6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP6
Tolerance: ±1%
товар відсутній
| MBRS190T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMB
Kind of package: reel; tape
товар відсутній
| FDMS7620S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS9620S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQA70N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 102 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.48 грн |
| 3+ | 169.87 грн |
| 7+ | 129.95 грн |
| 18+ | 122.69 грн |
| FQB11N40CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB12P20TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB19N20CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 76A
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 53nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 76A
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 53nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| FQB19N20LTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.32 грн |
| 5+ | 89.29 грн |
| 13+ | 68.24 грн |
| 35+ | 64.61 грн |
| FQB19N20TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 78A
Drain-source voltage: 200V
Drain current: 12.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 40nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 78A
Drain-source voltage: 200V
Drain current: 12.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 40nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| FQB1P50TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -0.95A
Power dissipation: 63W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -0.95A
Power dissipation: 63W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| FQB22P10TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB27P06TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB34N20LTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB34N20TM-AM002 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 124A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 124A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB34P10TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 664 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.23 грн |
| 5+ | 162.61 грн |
| 7+ | 125.59 грн |
| 19+ | 119.06 грн |
| FQB34P10TM-F085 |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Pulsed drain current: -134A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Pulsed drain current: -134A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| FQB44N10TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PCA9535ECMTTXG |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
товар відсутній
| PCA9535EDWR2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
товар відсутній
| NCV7344AD10R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
товар відсутній
| NCV7344D10R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
товар відсутній
| NCV7344D13R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
товар відсутній
| FXL4TD245BQX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: DQFN16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: DQFN16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
товар відсутній
| 74AUP1T97FHX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Technology: CMOS
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Technology: CMOS
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
товар відсутній
| 74AUP1T97L6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| FL7760AM6X |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 8...70V
Output current: -2.5...1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 8...70V
Output current: -2.5...1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
товар відсутній
| MMSZ6V8T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 4822 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 131+ | 2.99 грн |
| 146+ | 2.5 грн |
| 440+ | 1.82 грн |
| 1210+ | 1.72 грн |
| HCPL2531M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
на замовлення 672 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 166.52 грн |
| 5+ | 104.54 грн |
| 11+ | 81.71 грн |
| 29+ | 77.26 грн |
| 500+ | 73.32 грн |
| HCPL2531SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: Gull wing 8
Slew rate: 10kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: Gull wing 8
Slew rate: 10kV/μs
на замовлення 323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.71 грн |
| 5+ | 94.37 грн |
| 13+ | 68.97 грн |
| 35+ | 64.61 грн |