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FDMS0310AS onsemi
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Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 31.03 грн |
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Технічний опис FDMS0310AS onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V.
Інші пропозиції FDMS0310AS за ціною від 23.35 грн до 73.13 грн
Фото | Назва | Виробник | Інформація |
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FDMS0310AS | Виробник : onsemi / Fairchild |
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на замовлення 2295 шт: термін постачання 21-30 дні (днів) |
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FDMS0310AS | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS0310AS | Виробник : ON Semiconductor |
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товар відсутній |
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FDMS0310AS | Виробник : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Mounting: SMD Kind of package: reel; tape Power dissipation: 41W Polarisation: unipolar Case: Power56 Gate charge: 37nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 22A On-state resistance: 6mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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FDMS0310AS | Виробник : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Mounting: SMD Kind of package: reel; tape Power dissipation: 41W Polarisation: unipolar Case: Power56 Gate charge: 37nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 22A On-state resistance: 6mΩ Type of transistor: N-MOSFET |
товар відсутній |