| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| HCPL2531SDM | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -500mV...20V Manufacturer series: HCPL2531M |
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MBRF30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.93V Max. load current: 30A Max. off-state voltage: 100V Case: TO220FP Semiconductor structure: common cathode; double Max. forward impulse current: 250A Load current: 15A x2 |
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MC7805CTG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: TO220AB Mounting: THT Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 7...20V Manufacturer series: MC7800 |
на замовлення 425 шт: термін постачання 21-30 дні (днів) |
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| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Mounting: SMD Power dissipation: 246W Polarisation: unipolar Kind of package: reel; tape Gate charge: 178nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 916A Case: D2PAK Drain-source voltage: 80V Drain current: 162A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Mounting: SMD Drain current: 1.2A Drain-source voltage: 20V Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.6nC Technology: PowerTrench® Kind of channel: enhanced On-state resistance: 389mΩ Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Case: SC70-6; SC88; SOT363 |
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FDME1024NZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.2nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MicroFET Drain-source voltage: 20V Drain current: 3.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET x2 |
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RFD14N05LSM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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RFD14N05LSM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2263 шт: термін постачання 21-30 дні (днів) |
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74ACT14MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT |
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74ACT14SC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT |
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74ACT14SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: ACT |
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| FDMB2307NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.7A Pulsed drain current: 40A Power dissipation: 2.2W Case: WDFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain |
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| FDMB2308PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6 Mounting: SMD Pulsed drain current: -30A Power dissipation: 2.2W Gate charge: 30nC Polarisation: unipolar Drain current: -7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Kind of package: reel; tape Semiconductor structure: common drain Case: WDFN6 Gate-source voltage: ±12V |
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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BC808-25LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Frequency: 100MHz Collector-emitter voltage: 25V Current gain: 160...400 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.3W Polarisation: bipolar |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 75ns Turn-off time: 55ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: 0...25V |
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MJE172G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: TO225 Mounting: THT Kind of package: bulk Frequency: 50MHz |
на замовлення 494 шт: термін постачання 21-30 дні (днів) |
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H11F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM Mounting: THT Case: DIP6 Manufacturer series: H11FXM Insulation voltage: 7kV Number of channels: 1 Turn-off time: 25µs Turn-on time: 25µs Type of optocoupler: optocoupler Kind of output: transistor |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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NTMFS5C670NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 440A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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AMIS41682CANM1RG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape Mounting: SMD Operating temperature: -40...125°C Supply voltage: 5V DC Kind of package: reel; tape Kind of integrated circuit: transceiver Case: SO14 Type of integrated circuit: digital |
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1N4149TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.5A Semiconductor structure: single diode Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 1142 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC245DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Frequency: 50MHz Collector-emitter voltage: 80V Collector current: 10A Type of transistor: NPN Power dissipation: 36W Polarisation: bipolar |
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MC74HC4040ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
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| MC74HC4040ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
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| NLAS7222AMTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WQFN10; 3÷3.6VDC; reel,tape; OUT: DPDT; 1uA Type of integrated circuit: analog switch Number of channels: 1 Case: WQFN10 Supply voltage: 3...3.6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA Technology: CMOS |
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| FSA2275AUMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.5...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 |
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| FSA2275UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.5...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 |
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| FSA2276UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 |
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| FDB8441 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 300W; D2PAK Case: D2PAK Mounting: SMD On-state resistance: 2.5mΩ Kind of package: reel; tape Technology: UniFET™ Power dissipation: 300W Gate charge: 280nC Polarisation: unipolar Drain current: 28A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
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| FDB8447L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK Case: D2PAK Mounting: SMD On-state resistance: 12.4mΩ Kind of package: reel; tape Power dissipation: 60W Polarisation: unipolar Drain current: 50A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
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| NTD18N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 55W Case: DPAK Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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MC14503BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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MC14503BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape |
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MC74HCT365ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
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| MC74HCT365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
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| NRVB540MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Application: automotive industry Max. load current: 10A Max. forward voltage: 0.58V Load current: 5A |
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| NRVB540MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Application: automotive industry Max. load current: 10A Max. forward voltage: 0.58V Load current: 5A |
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FDT86106LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.2W On-state resistance: 189mΩ Polarisation: unipolar Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.2A Type of transistor: N-MOSFET |
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FDT86113LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 100V Drain current: 3.3A On-state resistance: 189mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar |
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NCV8402ADDR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5.4A; Ch: 2; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5.4A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 42V DC |
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NCV8402ASTT3G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 42V DC |
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BAS31 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double series Capacitance: 35pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 876 шт: термін постачання 21-30 дні (днів) |
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BZX79C11 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C15 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2234 шт: термін постачання 21-30 дні (днів) |
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BZX79C2V7 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: DO35 Semiconductor structure: single diode |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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BZX79C3V3 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3620 шт: термін постачання 21-30 дні (днів) |
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BZX79C3V9 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C4V3 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C6V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: DO35 Semiconductor structure: single diode |
на замовлення 3980 шт: термін постачання 21-30 дні (днів) |
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BZX79C6V8 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C8V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1950 шт: термін постачання 21-30 дні (днів) |
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BZX79C9V1 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
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MC7805BD2TG | ONSEMI |
 Category: Unregulated voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; tube; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V Manufacturer series: MC7800 |
товар відсутній |
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MC7805BD2TR4G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V Manufacturer series: MC7800 |
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| FCH067N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO247 Gate-source voltage: ±30V On-state resistance: 59mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
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| NRVUS110VT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 40A Kind of package: reel; tape Application: automotive industry |
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| FDMA420NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6 Mounting: SMD Case: WDFN6 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A |
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MC14022BDG | ONSEMI |
Category: Counters/dividers Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16 Mounting: SMD Case: SO16 Type of integrated circuit: digital Number of channels: 8 Technology: CMOS Kind of integrated circuit: counter |
на замовлення 2278 шт: термін постачання 21-30 дні (днів) |
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MJE181G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 15W; TO225 Power dissipation: 15W Case: TO225 Mounting: THT Kind of package: bulk Collector current: 3A Collector-emitter voltage: 60V Polarisation: bipolar Type of transistor: NPN Current gain: 12...250 Frequency: 50MHz |
товар відсутній |
| HCPL2531SDM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
товар відсутній
| MBRF30H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.93V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.93V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Load current: 15A x2
товар відсутній
| MC7805CTG |
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Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Manufacturer series: MC7800
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Manufacturer series: MC7800
на замовлення 425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 45.34 грн |
| 12+ | 30.93 грн |
| 50+ | 19.24 грн |
| 56+ | 15.32 грн |
| 153+ | 14.52 грн |
| FDB024N08BL7 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
товар відсутній
| FDG1024NZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
товар відсутній
| FDME1024NZT |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MicroFET
Drain-source voltage: 20V
Drain current: 3.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MicroFET
Drain-source voltage: 20V
Drain current: 3.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET x2
товар відсутній
| RFD14N05LSM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.18 грн |
| 22+ | 38.48 грн |
| 61+ | 36.3 грн |
| RFD14N05LSM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.31 грн |
| 10+ | 37.31 грн |
| 25+ | 29.91 грн |
| 33+ | 26.03 грн |
| 90+ | 24.62 грн |
| 74ACT14MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
товар відсутній
| 74ACT14SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
товар відсутній
| 74ACT14SCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
товар відсутній
| FDMB2307NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.7A
Pulsed drain current: 40A
Power dissipation: 2.2W
Case: WDFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.7A
Pulsed drain current: 40A
Power dissipation: 2.2W
Case: WDFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
товар відсутній
| FDMB2308PZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2.2W
Gate charge: 30nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: common drain
Case: WDFN6
Gate-source voltage: ±12V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2.2W
Gate charge: 30nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: common drain
Case: WDFN6
Gate-source voltage: ±12V
товар відсутній
| BC818-40LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| BC808-25LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 25V
Current gain: 160...400
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 25V
Current gain: 160...400
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| FOD3180 |
|
Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
товар відсутній
| MJE172G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 10+ | 42.32 грн |
| 25+ | 33.68 грн |
| 37+ | 23.38 грн |
| 100+ | 22.14 грн |
| H11F1M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM
Mounting: THT
Case: DIP6
Manufacturer series: H11FXM
Insulation voltage: 7kV
Number of channels: 1
Turn-off time: 25µs
Turn-on time: 25µs
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM
Mounting: THT
Case: DIP6
Manufacturer series: H11FXM
Insulation voltage: 7kV
Number of channels: 1
Turn-off time: 25µs
Turn-on time: 25µs
Type of optocoupler: optocoupler
Kind of output: transistor
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 359.62 грн |
| 3+ | 309.26 грн |
| 4+ | 242.47 грн |
| 10+ | 229.4 грн |
| 25+ | 228.67 грн |
| NTMFS5C670NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.56 грн |
| 5+ | 102.36 грн |
| 11+ | 77.68 грн |
| 30+ | 73.32 грн |
| AMIS41682CANM1RG |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 5V DC
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: digital
Category: Interfaces others - integrated circuits
Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 5V DC
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: digital
товар відсутній
| 1N4149TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 1142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.04 грн |
| 59+ | 6.17 грн |
| 106+ | 3.46 грн |
| 176+ | 2.07 грн |
| 250+ | 1.73 грн |
| 500+ | 1.44 грн |
| 848+ | 0.99 грн |
| MC74VHC245DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| MJF44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Frequency: 50MHz
Collector-emitter voltage: 80V
Collector current: 10A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Frequency: 50MHz
Collector-emitter voltage: 80V
Collector current: 10A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
товар відсутній
| MC74HC4040ADR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MC74HC4040ADTR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| NLAS7222AMTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WQFN10; 3÷3.6VDC; reel,tape; OUT: DPDT; 1uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: WQFN10
Supply voltage: 3...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WQFN10; 3÷3.6VDC; reel,tape; OUT: DPDT; 1uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: WQFN10
Supply voltage: 3...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Technology: CMOS
товар відсутній
| FSA2275AUMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FSA2275UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FSA2276UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FDB8441 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 2.5mΩ
Kind of package: reel; tape
Technology: UniFET™
Power dissipation: 300W
Gate charge: 280nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 2.5mΩ
Kind of package: reel; tape
Technology: UniFET™
Power dissipation: 300W
Gate charge: 280nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
| FDB8447L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 12.4mΩ
Kind of package: reel; tape
Power dissipation: 60W
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 12.4mΩ
Kind of package: reel; tape
Power dissipation: 60W
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
| NTD18N06LT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC14503BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.63 грн |
| 10+ | 49.44 грн |
| 23+ | 37.16 грн |
| 63+ | 35.14 грн |
| MC14503BDR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
товар відсутній
| MC74HCT365ADR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
товар відсутній
| MC74HCT365ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
товар відсутній
| NRVB540MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 10A
Max. forward voltage: 0.58V
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 10A
Max. forward voltage: 0.58V
Load current: 5A
товар відсутній
| NRVB540MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 10A
Max. forward voltage: 0.58V
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 10A
Max. forward voltage: 0.58V
Load current: 5A
товар відсутній
| FDT86106LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 189mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 189mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
товар відсутній
| FDT86113LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.3A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.3A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
товар відсутній
| NCV8402ADDR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
товар відсутній
| NCV8402ASTT3G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
товар відсутній
| BAS31 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 35pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 35pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 876 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 8.91 грн |
| 100+ | 7.45 грн |
| 148+ | 5.71 грн |
| 407+ | 5.39 грн |
| BZX79C11 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C15 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.71 грн |
| 210+ | 1.79 грн |
| 260+ | 1.44 грн |
| 680+ | 1.25 грн |
| 1850+ | 1.18 грн |
| BZX79C2V7 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO35
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO35
Semiconductor structure: single diode
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.69 грн |
| 150+ | 2.58 грн |
| 250+ | 2.08 грн |
| 480+ | 1.79 грн |
| 1300+ | 1.68 грн |
| BZX79C3V3 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3620 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.55 грн |
| 120+ | 3.07 грн |
| 380+ | 2.32 грн |
| 1000+ | 2.19 грн |
| BZX79C3V9 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C4V3 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C6V2 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO35
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO35
Semiconductor structure: single diode
на замовлення 3980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.32 грн |
| 130+ | 2.91 грн |
| 250+ | 2.34 грн |
| 420+ | 2.02 грн |
| 1150+ | 1.91 грн |
| BZX79C6V8 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C8V2 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.65 грн |
| 130+ | 2.99 грн |
| 250+ | 2.4 грн |
| 400+ | 2.16 грн |
| 1090+ | 2.03 грн |
| BZX79C9V1 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.93 грн |
| 140+ | 2.72 грн |
| 250+ | 2.19 грн |
| 450+ | 1.89 грн |
| 1240+ | 1.79 грн |
| MC7805BD2TG | |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
товар відсутній
| MC7805BD2TR4G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
товар відсутній
| FCH067N65S3-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NRVUS110VT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| FDMA420NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
товар відсутній
| MC14022BDG | |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16
Mounting: SMD
Case: SO16
Type of integrated circuit: digital
Number of channels: 8
Technology: CMOS
Kind of integrated circuit: counter
Category: Counters/dividers
Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16
Mounting: SMD
Case: SO16
Type of integrated circuit: digital
Number of channels: 8
Technology: CMOS
Kind of integrated circuit: counter
на замовлення 2278 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 48.47 грн |
| 10+ | 40.65 грн |
| 27+ | 32.23 грн |
| 73+ | 30.49 грн |
| 240+ | 29.33 грн |
| MJE181G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; TO225
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Collector current: 3A
Collector-emitter voltage: 60V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 12...250
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; TO225
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Collector current: 3A
Collector-emitter voltage: 60V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 12...250
Frequency: 50MHz
товар відсутній