Технічний опис APTGT100DH60TG Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Інші пропозиції APTGT100DH60TG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT100DH60TG | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: asymmetrical bridge; NTC thermistor Collector current: 100A кількість в упаковці: 12 шт |
товар відсутній |
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| APTGT100DH60TG | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 150A 340W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
товар відсутній |
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| APTGT100DH60TG | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товар відсутній |
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| APTGT100DH60TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: asymmetrical bridge; NTC thermistor Collector current: 100A |
товар відсутній |