APTGT100H170G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge
Collector current: 100A
кількість в упаковці: 4 шт
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Технічний опис APTGT100H170G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1700V 150A 560W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Інші пропозиції APTGT100H170G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT100H170G | Виробник : Microchip Technology |
Trans IGBT Module N-CH 1700V 150A 560mW 12-Pin Case SP-6 Tube |
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| APTGT100H170G | Виробник : MICROSEMI |
SP6/Full - Bridge Trench + Field Stop IGBT Power Module APTGT100H170 кількість в упаковці: 1 шт |
товар відсутній |
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| APTGT100H170G | Виробник : Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
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| APTGT100H170G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT100H170G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge Collector current: 100A |
товар відсутній |