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IXTT360N055T2 IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
кількість в упаковці: 1 шт
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Технічний опис IXTT360N055T2 IXYS
Description: MOSFET N-CH 55V 360A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Інші пропозиції IXTT360N055T2
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IXTT360N055T2 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
товар відсутній |
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IXTT360N055T2 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXTT360N055T2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Drain current: 360A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 935W Features of semiconductor devices: thrench gate power mosfet Gate charge: 330nC Kind of channel: enhanced Reverse recovery time: 78ns Drain-source voltage: 55V |
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