Технічний опис MCB20P1200LB-TRR Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B, Technology: SiC, Case: SMPD-B, Mounting: SMD, On-state resistance: 98mΩ, Kind of package: reel; tape, Gate charge: 62nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Drain-source voltage: 1.2kV, Drain current: 25.5A, Type of transistor: N-MOSFET, Semiconductor structure: double series, Polarisation: unipolar, кількість в упаковці: 200 шт.
Інші пропозиції MCB20P1200LB-TRR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MCB20P1200LB-TRR | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Technology: SiC Case: SMPD-B Mounting: SMD On-state resistance: 98mΩ Kind of package: reel; tape Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: -5...20V Drain-source voltage: 1.2kV Drain current: 25.5A Type of transistor: N-MOSFET Semiconductor structure: double series Polarisation: unipolar кількість в упаковці: 200 шт |
товар відсутній |
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| MCB20P1200LB-TRR | Виробник : IXYS | Description: MCB20P1200LB-TRR |
товар відсутній |
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| MCB20P1200LB-TRR | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Technology: SiC Case: SMPD-B Mounting: SMD On-state resistance: 98mΩ Kind of package: reel; tape Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: -5...20V Drain-source voltage: 1.2kV Drain current: 25.5A Type of transistor: N-MOSFET Semiconductor structure: double series Polarisation: unipolar |
товар відсутній |