IXTP150N15X4A IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Pulsed drain current: 260A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 93ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Pulsed drain current: 260A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 93ns
кількість в упаковці: 1 шт
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Технічний опис IXTP150N15X4A IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A, Type of transistor: N-MOSFET, Technology: X4-Class, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 150A, Pulsed drain current: 260A, Power dissipation: 480W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 7.2mΩ, Mounting: THT, Gate charge: 105nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Application: automotive industry, Reverse recovery time: 93ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTP150N15X4A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTP150N15X4A | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A Type of transistor: N-MOSFET Technology: X4-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Pulsed drain current: 260A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Application: automotive industry Reverse recovery time: 93ns |
товару немає в наявності |