Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136442) > Сторінка 287 з 2275
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2ED020I12FAXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 13V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: PG-DSO-36-58 Rise / Fall Time (Typ): 30ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.5V, 3.5V Current - Peak Output (Source, Sink): 2.4A, 2.4A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 4087 шт: термін постачання 21-31 дні (днів) |
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AUIPS1042GTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-906 Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
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AUIPS1052GTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.1A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-906 Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
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AUIPS2051LTR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 250mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 900mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-3 Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Obsolete |
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AUIPS2052GTR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 250mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 900mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-906 Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
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AUIPS7111STRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 6mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 50V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-5 Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
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AUIRF7103QTR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
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AUIRFR5305TRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7223 шт: термін постачання 21-31 дні (днів) |
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AUIRFR5410TRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2122 шт: термін постачання 21-31 дні (днів) |
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AUIRLL014NTR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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AUIRLL2705TR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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AUIRLR3410TRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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AUIRS2113STR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 25ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Obsolete DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
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AUIRS2301STR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 130ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Not For New Designs DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10338 шт: термін постачання 21-31 дні (днів) |
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BAT6302VH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz Voltage - Peak Reverse (Max): 3V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 100 mW |
на замовлення 6421 шт: термін постачання 21-31 дні (днів) |
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BSC009NE2LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V |
на замовлення 11031 шт: термін постачання 21-31 дні (днів) |
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BSC009NE2LS5IATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V |
на замовлення 6049 шт: термін постачання 21-31 дні (днів) |
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BSC010N04LSIATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V |
на замовлення 9013 шт: термін постачання 21-31 дні (днів) |
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BSC026N04LSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V |
на замовлення 10118 шт: термін постачання 21-31 дні (днів) |
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BSC026N08NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 115µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V |
на замовлення 8885 шт: термін постачання 21-31 дні (днів) |
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BSC026NE2LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V |
на замовлення 4896 шт: термін постачання 21-31 дні (днів) |
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BSC032N04LSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
на замовлення 12797 шт: термін постачання 21-31 дні (днів) |
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BSC037N08NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 114W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 72µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V |
на замовлення 12462 шт: термін постачання 21-31 дні (днів) |
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BSC072N08NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 36µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V |
на замовлення 28407 шт: термін постачання 21-31 дні (днів) |
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BSC0921NDIATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 31A Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
на замовлення 18251 шт: термін постачання 21-31 дні (днів) |
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BSC093N15NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 107µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V |
на замовлення 1906 шт: термін постачання 21-31 дні (днів) |
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BSC117N08NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 22µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V |
на замовлення 5331 шт: термін постачання 21-31 дні (днів) |
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BSG0811NDATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 41A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
на замовлення 16872 шт: термін постачання 21-31 дні (днів) |
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BSL308CH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-TSOP6-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 21825 шт: термін постачання 21-31 дні (днів) |
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BSL316CH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 3.7µA Supplier Device Package: PG-TSOP6-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 92360 шт: термін постачання 21-31 дні (днів) |
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BSL606SNH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 15µA Supplier Device Package: PG-TSOP6-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11144 шт: термін постачання 21-31 дні (днів) |
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BSS806NEH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 750mV @ 11µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 64185 шт: термін постачання 21-31 дні (днів) |
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BSZ034N04LSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33207 шт: термін постачання 21-31 дні (днів) |
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BSZ15DC02KDHXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.4V @ 110µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17650 шт: термін постачання 21-31 дні (днів) |
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ICE1HS01G1XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Duty Cycle: 50% Frequency - Switching: 50kHz ~ 609kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V Supplier Device Package: PG-DSO-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage Voltage - Start Up: 12 V Control Features: Frequency Control Part Status: Active |
товар відсутній |
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ICE3PCS02GXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 11V ~ 25V Frequency - Switching: 21kHz ~ 250kHz Mode: Continuous Conduction (CCM) Supplier Device Package: PG-DSO-8 Part Status: Active Current - Startup: 380 µA |
на замовлення 18112 шт: термін постачання 21-31 дні (днів) |
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IPB020N08N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 208µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V |
на замовлення 5365 шт: термін постачання 21-31 дні (днів) |
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IPB031N08N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V |
на замовлення 5378 шт: термін постачання 21-31 дні (днів) |
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IPB180N10S402ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
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IPD50N04S410ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V |
на замовлення 4206 шт: термін постачання 21-31 дні (днів) |
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IPD60N10S4L12ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 46µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 70657 шт: термін постачання 21-31 дні (днів) |
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IPD80R1K4CEATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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IPG20N04S4L08ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 38846 шт: термін постачання 21-31 дні (днів) |
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IPG20N04S4L11ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 39219 шт: термін постачання 21-31 дні (днів) |
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IPG20N06S2L35ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14950 шт: термін постачання 21-31 дні (днів) |
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IPG20N10S4L22ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18533 шт: термін постачання 21-31 дні (днів) |
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IPL65R070C7AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V Power Dissipation (Max): 169W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V |
на замовлення 6646 шт: термін постачання 21-31 дні (днів) |
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IR1168STRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8.6V ~ 18V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Part Status: Active Current - Supply: 48 mA DigiKey Programmable: Not Verified |
на замовлення 4878 шт: термін постачання 21-31 дні (днів) |
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IR2102STRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4589 шт: термін постачання 21-31 дні (днів) |
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IR21844STRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 7624 шт: термін постачання 21-31 дні (днів) |
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IR3537MTRPBF | Infineon Technologies |
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на замовлення 923 шт: термін постачання 21-31 дні (днів) |
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IR3556MTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Diode Emulation, Status Flag Package / Case: 30-PowerVFQFN Mounting Type: Surface Mount Interface: PWM Voltage - Supply: 4.5V ~ 7V Applications: Synchronous Buck Converters, Voltage Regulators Current - Output / Channel: 50A Voltage - Load: 4.5V ~ 15V Supplier Device Package: 30-PQFN (6x6) Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO Load Type: Inductive |
товар відсутній |
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IRF100S201 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
на замовлення 1543 шт: термін постачання 21-31 дні (днів) |
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IRF1404ZSTRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
на замовлення 4372 шт: термін постачання 21-31 дні (днів) |
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IRF540ZSTRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товар відсутній |
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IRF7820TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V |
на замовлення 3866 шт: термін постачання 21-31 дні (днів) |
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IRFH3707TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V |
на замовлення 7198 шт: термін постачання 21-31 дні (днів) |
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IRFH5006TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V |
товар відсутній |
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IRFH5210TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V |
на замовлення 4771 шт: термін постачання 21-31 дні (днів) |
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IRFH5215TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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2ED020I12FAXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO36-58
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36-58
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDG DSO36-58
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36-58
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 4087 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 809.59 грн |
10+ | 716.12 грн |
25+ | 686.46 грн |
100+ | 567.6 грн |
250+ | 539.74 грн |
500+ | 504.92 грн |
AUIPS1042GTR |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
AUIPS1052GTR |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
AUIPS2051LTR |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 900mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 900mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
товар відсутній
AUIPS2052GTR |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 900mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 900mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
AUIPS7111STRL |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 50V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHAN 1:1 TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 50V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
AUIRF7103QTR |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 50V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AUIRFR5305TRL |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7223 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.58 грн |
10+ | 157.32 грн |
100+ | 127.27 грн |
500+ | 106.17 грн |
1000+ | 90.91 грн |
AUIRFR5410TRL |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2122 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 203.73 грн |
10+ | 164.22 грн |
100+ | 132.89 грн |
500+ | 110.85 грн |
1000+ | 94.92 грн |
AUIRLL014NTR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 2A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 2A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AUIRLL2705TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 5.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 5.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AUIRLR3410TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AUIRS2113STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
AUIRS2301STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10338 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 199.15 грн |
10+ | 172.16 грн |
25+ | 162.42 грн |
100+ | 129.87 грн |
250+ | 121.95 грн |
500+ | 106.7 грн |
1000+ | 86.96 грн |
BAT6302VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE SCHOTTKY 3V 100MW SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE SCHOTTKY 3V 100MW SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
на замовлення 6421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.34 грн |
12+ | 25.72 грн |
100+ | 15.39 грн |
500+ | 13.38 грн |
1000+ | 9.1 грн |
BSC009NE2LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Description: MOSFET N-CH 25V 41A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 11031 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 135.06 грн |
10+ | 108.09 грн |
100+ | 85.99 грн |
500+ | 68.28 грн |
1000+ | 57.94 грн |
2000+ | 55.04 грн |
BSC009NE2LS5IATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
Description: MOSFET N-CH 25V 40A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
на замовлення 6049 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 175.5 грн |
10+ | 140.12 грн |
100+ | 111.54 грн |
500+ | 88.57 грн |
1000+ | 75.15 грн |
2000+ | 71.4 грн |
BSC010N04LSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V
Description: MOSFET N-CH 40V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V
на замовлення 9013 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 238.07 грн |
10+ | 192.29 грн |
100+ | 155.58 грн |
500+ | 129.78 грн |
1000+ | 111.12 грн |
2000+ | 104.63 грн |
BSC026N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
на замовлення 10118 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.22 грн |
10+ | 90.67 грн |
100+ | 70.52 грн |
500+ | 56.1 грн |
1000+ | 45.7 грн |
2000+ | 43.02 грн |
BSC026N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Description: MOSFET N-CH 80V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
на замовлення 8885 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.57 грн |
10+ | 180.68 грн |
100+ | 146.16 грн |
500+ | 121.93 грн |
1000+ | 104.4 грн |
2000+ | 98.31 грн |
BSC026NE2LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
Description: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
на замовлення 4896 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 100.72 грн |
10+ | 79.28 грн |
100+ | 61.67 грн |
500+ | 49.05 грн |
1000+ | 39.96 грн |
2000+ | 37.62 грн |
BSC032N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
на замовлення 12797 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.36 грн |
10+ | 62.38 грн |
100+ | 48.48 грн |
500+ | 38.56 грн |
1000+ | 31.42 грн |
2000+ | 29.57 грн |
BSC037N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
на замовлення 12462 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 173.97 грн |
10+ | 139.09 грн |
100+ | 110.71 грн |
500+ | 87.91 грн |
1000+ | 74.59 грн |
2000+ | 70.86 грн |
BSC072N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 74A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Description: MOSFET N-CH 80V 74A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
на замовлення 28407 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.14 грн |
10+ | 100.08 грн |
100+ | 79.67 грн |
500+ | 63.27 грн |
1000+ | 53.68 грн |
2000+ | 51 грн |
BSC0921NDIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 18251 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 118.27 грн |
10+ | 94.42 грн |
100+ | 75.15 грн |
500+ | 59.67 грн |
1000+ | 50.63 грн |
2000+ | 48.1 грн |
BSC093N15NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 87A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
Description: MOSFET N-CH 150V 87A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
на замовлення 1906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 237.31 грн |
10+ | 191.7 грн |
100+ | 155.1 грн |
500+ | 129.38 грн |
1000+ | 110.78 грн |
BSC117N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
Description: MOSFET N-CH 80V 49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
на замовлення 5331 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.25 грн |
10+ | 80.53 грн |
100+ | 62.62 грн |
500+ | 49.81 грн |
1000+ | 40.58 грн |
2000+ | 38.2 грн |
BSG0811NDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/41A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 25V 19A/41A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 16872 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 186.18 грн |
10+ | 149.23 грн |
100+ | 118.76 грн |
500+ | 94.3 грн |
1000+ | 80.01 грн |
2000+ | 76.01 грн |
BSL308CH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.26 грн |
10+ | 37.03 грн |
100+ | 25.63 грн |
500+ | 20.09 грн |
1000+ | 17.1 грн |
BSL316CH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 92360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.63 грн |
10+ | 29.91 грн |
100+ | 20.79 грн |
500+ | 15.24 грн |
1000+ | 12.38 грн |
BSL606SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11144 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.02 грн |
10+ | 36.81 грн |
100+ | 25.56 грн |
500+ | 18.73 грн |
1000+ | 15.22 грн |
BSS806NEH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 64185 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.47 грн |
16+ | 19.1 грн |
100+ | 9.63 грн |
500+ | 8.01 грн |
1000+ | 6.24 грн |
BSZ034N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33207 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 77.07 грн |
10+ | 60.77 грн |
100+ | 47.25 грн |
500+ | 37.59 грн |
1000+ | 30.62 грн |
2000+ | 28.83 грн |
BSZ15DC02KDHXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17650 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.04 грн |
10+ | 71.2 грн |
100+ | 55.37 грн |
500+ | 44.05 грн |
1000+ | 35.88 грн |
2000+ | 33.78 грн |
ICE1HS01G1XUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SW HALF-BRIDGE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 50kHz ~ 609kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 12 V
Control Features: Frequency Control
Part Status: Active
Description: IC OFFLINE SW HALF-BRIDGE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 50kHz ~ 609kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 12 V
Control Features: Frequency Control
Part Status: Active
товар відсутній
ICE3PCS02GXUMA1 |
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Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 250KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 250kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 380 µA
Description: IC PFC CTRLR CCM 250KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 250kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 380 µA
на замовлення 18112 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.88 грн |
10+ | 95.08 грн |
25+ | 89.7 грн |
100+ | 71.73 грн |
250+ | 67.35 грн |
500+ | 59.29 грн |
IPB020N08N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
на замовлення 5365 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.31 грн |
10+ | 168.78 грн |
100+ | 136.54 грн |
500+ | 125.32 грн |
IPB031N08N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 5378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 204.5 грн |
10+ | 165.03 грн |
100+ | 133.53 грн |
500+ | 111.39 грн |
IPB180N10S402ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 431.88 грн |
10+ | 356.59 грн |
100+ | 297.15 грн |
500+ | 246.06 грн |
IPD50N04S410ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3-313
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Description: MOSFET N-CH 40V 50A TO252-3-313
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
на замовлення 4206 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.31 грн |
10+ | 37.77 грн |
100+ | 29.38 грн |
500+ | 23.37 грн |
1000+ | 23.12 грн |
IPD60N10S4L12ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70657 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 88.51 грн |
10+ | 71.2 грн |
100+ | 56.7 грн |
500+ | 48.04 грн |
IPD80R1K4CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 96.91 грн |
10+ | 76.56 грн |
100+ | 59.51 грн |
500+ | 47.34 грн |
1000+ | 38.56 грн |
IPG20N04S4L08ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38846 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.88 грн |
10+ | 86.34 грн |
100+ | 67.14 грн |
500+ | 53.41 грн |
1000+ | 43.51 грн |
2000+ | 40.96 грн |
IPG20N04S4L11ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 86.99 грн |
10+ | 68.41 грн |
100+ | 53.19 грн |
500+ | 42.31 грн |
1000+ | 34.47 грн |
2000+ | 32.45 грн |
IPG20N06S2L35ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 100.72 грн |
10+ | 79.65 грн |
100+ | 61.91 грн |
500+ | 49.25 грн |
1000+ | 40.12 грн |
2000+ | 37.76 грн |
IPG20N10S4L22ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18533 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 128.19 грн |
10+ | 102.5 грн |
100+ | 81.6 грн |
500+ | 64.8 грн |
1000+ | 54.98 грн |
2000+ | 52.23 грн |
IPL65R070C7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 28A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
Description: MOSFET N-CH 650V 28A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
на замовлення 6646 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 511.24 грн |
10+ | 421.99 грн |
100+ | 351.67 грн |
500+ | 291.2 грн |
1000+ | 262.08 грн |
IR1168STRPBF |
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Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
на замовлення 4878 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 205.26 грн |
10+ | 177.89 грн |
25+ | 168.18 грн |
100+ | 136.78 грн |
250+ | 129.76 грн |
500+ | 116.43 грн |
1000+ | 96.59 грн |
IR2102STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.22 грн |
10+ | 99.05 грн |
25+ | 94.05 грн |
100+ | 72.51 грн |
250+ | 67.78 грн |
500+ | 59.9 грн |
1000+ | 46.51 грн |
IR21844STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7624 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 196.1 грн |
10+ | 170.1 грн |
25+ | 160.48 грн |
100+ | 128.31 грн |
250+ | 120.49 грн |
500+ | 105.43 грн |
1000+ | 85.92 грн |
IR3537MTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Description: IC GATE DRVR HALF-BRIDGE 10DFN
на замовлення 923 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.8 грн |
10+ | 78.18 грн |
25+ | 74.15 грн |
100+ | 57.17 грн |
250+ | 53.44 грн |
500+ | 47.23 грн |
IR3556MTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRIVER 50A 30PQFN
Packaging: Cut Tape (CT)
Features: Diode Emulation, Status Flag
Package / Case: 30-PowerVFQFN
Mounting Type: Surface Mount
Interface: PWM
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters, Voltage Regulators
Current - Output / Channel: 50A
Voltage - Load: 4.5V ~ 15V
Supplier Device Package: 30-PQFN (6x6)
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Load Type: Inductive
Description: IC GATE DRIVER 50A 30PQFN
Packaging: Cut Tape (CT)
Features: Diode Emulation, Status Flag
Package / Case: 30-PowerVFQFN
Mounting Type: Surface Mount
Interface: PWM
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters, Voltage Regulators
Current - Output / Channel: 50A
Voltage - Load: 4.5V ~ 15V
Supplier Device Package: 30-PQFN (6x6)
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Load Type: Inductive
товар відсутній
IRF100S201 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 192A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Description: MOSFET N-CH 100V 192A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 1543 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 264.78 грн |
10+ | 214.34 грн |
100+ | 173.42 грн |
IRF1404ZSTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
на замовлення 4372 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 151.08 грн |
10+ | 120.43 грн |
100+ | 95.87 грн |
IRF540ZSTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
IRF7820TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3866 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.3 грн |
10+ | 82.81 грн |
100+ | 64.42 грн |
500+ | 51.25 грн |
1000+ | 41.75 грн |
2000+ | 39.3 грн |
IRFH3707TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
на замовлення 7198 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.86 грн |
10+ | 29.46 грн |
100+ | 20.46 грн |
500+ | 14.99 грн |
1000+ | 12.18 грн |
2000+ | 10.89 грн |
IRFH5006TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 21A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
Description: MOSFET N-CH 60V 21A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
товар відсутній
IRFH5210TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A/55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Description: MOSFET N-CH 100V 10A/55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
на замовлення 4771 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.17 грн |
10+ | 88.47 грн |
100+ | 68.81 грн |
500+ | 54.73 грн |
1000+ | 44.58 грн |
2000+ | 41.97 грн |
IRFH5215TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 134.3 грн |
10+ | 107.87 грн |