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IDP23011XUMA1 Infineon Technologies Description: AC/DC DIGITAL PLATFORM
товар відсутній
IDP2302XUMA1 Infineon Technologies Description: AC/DC DIGITAL PLATFORM
товар відсутній
TLE8886TN2AKSA1 TLE8886TN2AKSA1 Infineon Technologies Description: ALTERNATOR_IC
товар відсутній
TLE8886TN2AKSA2 Infineon Technologies Description: ALTERNATOR_IC
товар відсутній
XMC1201T028F0032ABXUMA1 XMC1201T028F0032ABXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
XMC4700F100K1536AAXQMA1 XMC4700F100K1536AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 276K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
1+1291.75 грн
10+ 1143.39 грн
25+ 1096.02 грн
90+ 906.24 грн
270+ 861.76 грн
450+ 806.16 грн
XMC4800E196F1024AAXQMA1 XMC4800E196F1024AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1MB FLASH 196LFBGA
Packaging: Tray
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 200K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Number of I/O: 155
DigiKey Programmable: Not Verified
товар відсутній
XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1.5MB FLSH 196LFBGA
Packaging: Tray
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 276K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)
1+1425.57 грн
10+ 1266.02 грн
25+ 1209.12 грн
189+ 1014.56 грн
378+ 967.84 грн
567+ 921.12 грн
XMC4800F100F1536AAXQMA1 XMC4800F100F1536AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
товар відсутній
XMC4800F100F2048AAXQMA1 XMC4800F100F2048AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 2MB FLASH 100LQFP
товар відсутній
XMC4800F100K1024AAXQMA1 XMC4800F100K1024AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 200K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
на замовлення 351 шт:
термін постачання 21-31 дні (днів)
1+1373.87 грн
10+ 1219.82 грн
25+ 1165.04 грн
90+ 977.57 грн
270+ 932.55 грн
XMC4800F100K1536AAXQMA1 XMC4800F100K1536AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
товар відсутній
XMC4800F144K1536AAXQMA1 XMC4800F144K1536AAXQMA1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
товар відсутній
SAE800GGEGXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC AUDIO AMPLIFIER INDUSTRIAL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
SP370251060XTMA3 Infineon Technologies Description: BOARD MOUNT PRESSURE SENSOR
товар відсутній
TLE7263EXUMA2 Infineon Technologies TLE7263E_Rev1.71_Dec2013.pdf Description: IC INTERFACE SPECIALIZED BODY
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Part Status: Obsolete
товар відсутній
BGS12PN10E6327XTSA1 BGS12PN10E6327XTSA1 Infineon Technologies Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1 Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
на замовлення 7235 шт:
термін постачання 21-31 дні (днів)
BGS13PN10E6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF SWITCH SP3T 6GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 1.5dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 17dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 76dBm
товар відсутній
BGS14PN10E6327XTSA1 BGS14PN10E6327XTSA1 Infineon Technologies Infineon-BGS14PN10-DS-v01_03-EN.pdf?fileId=5546d46258dd266d0158debc894b0db1 Description: IC RF SWITCH SP4T 6GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 1.2dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 18dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 73dBm
Part Status: Active
товар відсутній
BGSX210MA18E6327XTSA1 BGSX210MA18E6327XTSA1 Infineon Technologies Infineon-BGSX210MA18-DS-v03_01-EN.pdf?fileId=5546d4625696ed760156daf71d3876d5 Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Tape & Reel (TR)
Package / Case: 18-UFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz ~ 2.7GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
товар відсутній
BGSX212MA18E6327XTSA1 BGSX212MA18E6327XTSA1 Infineon Technologies Infineon-BGSX212MA18-DS-v03_01-EN.pdf?fileId=5546d4625696ed760156daf72bf076d8 Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Tape & Reel (TR)
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
товар відсутній
BGSX28MA18E6327XTSA1 BGSX28MA18E6327XTSA1 Infineon Technologies BGSX28MA18.pdf Description: IC RF SWITCH DP3T 3.8GHZ ATSLP18
Packaging: Tape & Reel (TR)
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP3T
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
Part Status: Obsolete
товар відсутній
IPD50R280CEAUMA1 IPD50R280CEAUMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
товар відсутній
IPD50R500CEAUMA1 IPD50R500CEAUMA1 Infineon Technologies dgdl?fileId=db3a3043382e83730138514ff7881004 Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
2500+25.29 грн
5000+ 23.2 грн
12500+ 22.13 грн
25000+ 20.73 грн
Мінімальне замовлення: 2500
IPD60R1K5CEAUMA1 IPD60R1K5CEAUMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+17.59 грн
5000+ 15.58 грн
7500+ 14.89 грн
12500+ 13.24 грн
17500+ 13.06 грн
Мінімальне замовлення: 2500
IPD60R400CEAUMA1 IPD60R400CEAUMA1 Infineon Technologies Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+37.66 грн
5000+ 34.54 грн
12500+ 32.94 грн
Мінімальне замовлення: 2500
IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPN50R1K4CEATMA1 IPN50R1K4CEATMA1 Infineon Technologies Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7 Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+14.13 грн
6000+ 12.91 грн
9000+ 11.99 грн
Мінімальне замовлення: 3000
IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 Infineon Technologies Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa Description: MOSFET N-CH 500V 3.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+11.63 грн
6000+ 10.63 грн
Мінімальне замовлення: 3000
IPN50R3K0CEATMA1 IPN50R3K0CEATMA1 Infineon Technologies Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5 Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+10.33 грн
6000+ 9.44 грн
9000+ 8.77 грн
Мінімальне замовлення: 3000
IPN50R650CEATMA1 IPN50R650CEATMA1 Infineon Technologies Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8 Description: MOSFET N-CH 500V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+20.13 грн
Мінімальне замовлення: 3000
IPN50R800CEATMA1 IPN50R800CEATMA1 Infineon Technologies Infineon-IPN50R800CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae426895b03 Description: MOSFET N-CH 500V 7.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+16.68 грн
6000+ 15.22 грн
9000+ 14.09 грн
Мінімальне замовлення: 3000
IPN50R950CEATMA1 IPN50R950CEATMA1 Infineon Technologies Infineon-IPN50R950CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae41e225b00 Description: MOSFET N-CH 500V 6.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товар відсутній
IPN60R1K0CEATMA1 IPN60R1K0CEATMA1 Infineon Technologies Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21 Description: MOSFET N-CH 600V 6.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+17.15 грн
6000+ 15.65 грн
9000+ 14.49 грн
Мінімальне замовлення: 3000
IPN65R1K5CEATMA1 IPN65R1K5CEATMA1 Infineon Technologies Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50 Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товар відсутній
IPS60R1K0CEAKMA1 Infineon Technologies Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товар відсутній
IPS60R2K1CEAKMA1 IPS60R2K1CEAKMA1 Infineon Technologies Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товар відсутній
IPS60R400CEAKMA1 IPS60R400CEAKMA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPS60R460CEAKMA1 IPS60R460CEAKMA1 Infineon Technologies Infineon-IPS60R460CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537ed5aa20222e Description: CONSUMER
товар відсутній
IPS60R650CEAKMA1 IPS60R650CEAKMA1 Infineon Technologies Infineon-IPS60R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f15f6c6228a Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tj)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPS60R800CEAKMA1 IPS60R800CEAKMA1 Infineon Technologies Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPS70R600CEAKMA2 Infineon Technologies Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a Description: CONSUMER
товар відсутній
TDK5100FHTMA1 TDK5100FHTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 6.9dBm
Applications: General Purpose
Current - Transmitting: 11.4mA
Antenna Connector: Castellation
Supplier Device Package: 10-TSSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
2EDN7524GXTMA1 2EDN7524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+48.16 грн
Мінімальне замовлення: 4000
TLE7183FXUMA6 TLE7183FXUMA6 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMA7 TLE7183FXUMA7 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMA8 TLE7183FXUMA8 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMA9 TLE7183FXUMA9 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMB1 TLE7183FXUMB1 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE98422QXXUMA1 TLE98422QXXUMA1 Infineon Technologies Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
TLE9842QXXUMA1 TLE9842QXXUMA1 Infineon Technologies Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c Description: IC EMBEDDED POWER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+160.86 грн
Мінімальне замовлення: 2500
TLE98432QXXUMA1 TLE98432QXXUMA1 Infineon Technologies Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (52kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+180.45 грн
Мінімальне замовлення: 2500
TLE9843QXXUMA1 TLE9843QXXUMA1 Infineon Technologies Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+172.92 грн
Мінімальне замовлення: 2500
TLE9844QXXUMA1 TLE9844QXXUMA1 Infineon Technologies Infineon-TLE9844QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1c8a87505 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+178.48 грн
Мінімальне замовлення: 2500
TLE82452SAAUMA1 TLE82452SAAUMA1 Infineon Technologies TLE82452SA_rev1.0_2013-03-21.pdf Description: IC PWR DRIVER N-CHAN 1:2 DSO-36
товар відсутній
TLE82453SAAUMA1 TLE82453SAAUMA1 Infineon Technologies TLE82453SA_rev1.0_2013-03-21.pdf Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
товар відсутній
IPI50R140CPXKSA1 Infineon Technologies Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
товар відсутній
SPP20N60S5HKSA1 SPP20N60S5HKSA1 Infineon Technologies SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
IPT65R033G7XTMA1 IPT65R033G7XTMA1 Infineon Technologies Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
товар відсутній
IDP23011XUMA1
Виробник: Infineon Technologies
Description: AC/DC DIGITAL PLATFORM
товар відсутній
IDP2302XUMA1
Виробник: Infineon Technologies
Description: AC/DC DIGITAL PLATFORM
товар відсутній
TLE8886TN2AKSA1
TLE8886TN2AKSA1
Виробник: Infineon Technologies
Description: ALTERNATOR_IC
товар відсутній
TLE8886TN2AKSA2
Виробник: Infineon Technologies
Description: ALTERNATOR_IC
товар відсутній
XMC1201T028F0032ABXUMA1 fundamentals-of-power-semiconductors
XMC1201T028F0032ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
XMC4700F100K1536AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4700F100K1536AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 276K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1291.75 грн
10+ 1143.39 грн
25+ 1096.02 грн
90+ 906.24 грн
270+ 861.76 грн
450+ 806.16 грн
XMC4800E196F1024AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800E196F1024AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 196LFBGA
Packaging: Tray
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 200K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Number of I/O: 155
DigiKey Programmable: Not Verified
товар відсутній
XMC4800E196F1536AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800E196F1536AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLSH 196LFBGA
Packaging: Tray
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 276K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1425.57 грн
10+ 1266.02 грн
25+ 1209.12 грн
189+ 1014.56 грн
378+ 967.84 грн
567+ 921.12 грн
XMC4800F100F1536AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800F100F1536AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
товар відсутній
XMC4800F100F2048AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800F100F2048AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100LQFP
товар відсутній
XMC4800F100K1024AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800F100K1024AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 200K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
на замовлення 351 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1373.87 грн
10+ 1219.82 грн
25+ 1165.04 грн
90+ 977.57 грн
270+ 932.55 грн
XMC4800F100K1536AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800F100K1536AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
товар відсутній
XMC4800F144K1536AAXQMA1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
XMC4800F144K1536AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
товар відсутній
SAE800GGEGXUMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC AUDIO AMPLIFIER INDUSTRIAL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
SP370251060XTMA3
Виробник: Infineon Technologies
Description: BOARD MOUNT PRESSURE SENSOR
товар відсутній
TLE7263EXUMA2 TLE7263E_Rev1.71_Dec2013.pdf
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED BODY
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Part Status: Obsolete
товар відсутній
BGS12PN10E6327XTSA1 Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1
BGS12PN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
на замовлення 7235 шт:
термін постачання 21-31 дні (днів)
BGS13PN10E6327XTSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC RF SWITCH SP3T 6GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 1.5dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 17dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 76dBm
товар відсутній
BGS14PN10E6327XTSA1 Infineon-BGS14PN10-DS-v01_03-EN.pdf?fileId=5546d46258dd266d0158debc894b0db1
BGS14PN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 1.2dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 18dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 73dBm
Part Status: Active
товар відсутній
BGSX210MA18E6327XTSA1 Infineon-BGSX210MA18-DS-v03_01-EN.pdf?fileId=5546d4625696ed760156daf71d3876d5
BGSX210MA18E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Tape & Reel (TR)
Package / Case: 18-UFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz ~ 2.7GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
товар відсутній
BGSX212MA18E6327XTSA1 Infineon-BGSX212MA18-DS-v03_01-EN.pdf?fileId=5546d4625696ed760156daf72bf076d8
BGSX212MA18E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Tape & Reel (TR)
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
товар відсутній
BGSX28MA18E6327XTSA1 BGSX28MA18.pdf
BGSX28MA18E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DP3T 3.8GHZ ATSLP18
Packaging: Tape & Reel (TR)
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP3T
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
Part Status: Obsolete
товар відсутній
IPD50R280CEAUMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
товар відсутній
IPD50R500CEAUMA1 dgdl?fileId=db3a3043382e83730138514ff7881004
IPD50R500CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+25.29 грн
5000+ 23.2 грн
12500+ 22.13 грн
25000+ 20.73 грн
Мінімальне замовлення: 2500
IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+17.59 грн
5000+ 15.58 грн
7500+ 14.89 грн
12500+ 13.24 грн
17500+ 13.06 грн
Мінімальне замовлення: 2500
IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
IPD60R400CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+37.66 грн
5000+ 34.54 грн
12500+ 32.94 грн
Мінімальне замовлення: 2500
IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPN50R1K4CEATMA1 Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7
IPN50R1K4CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+14.13 грн
6000+ 12.91 грн
9000+ 11.99 грн
Мінімальне замовлення: 3000
IPN50R2K0CEATMA1 Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa
IPN50R2K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+11.63 грн
6000+ 10.63 грн
Мінімальне замовлення: 3000
IPN50R3K0CEATMA1 Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5
IPN50R3K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.33 грн
6000+ 9.44 грн
9000+ 8.77 грн
Мінімальне замовлення: 3000
IPN50R650CEATMA1 Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8
IPN50R650CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+20.13 грн
Мінімальне замовлення: 3000
IPN50R800CEATMA1 Infineon-IPN50R800CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae426895b03
IPN50R800CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+16.68 грн
6000+ 15.22 грн
9000+ 14.09 грн
Мінімальне замовлення: 3000
IPN50R950CEATMA1 Infineon-IPN50R950CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae41e225b00
IPN50R950CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товар відсутній
IPN60R1K0CEATMA1 Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21
IPN60R1K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+17.15 грн
6000+ 15.65 грн
9000+ 14.49 грн
Мінімальне замовлення: 3000
IPN65R1K5CEATMA1 Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50
IPN65R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товар відсутній
IPS60R1K0CEAKMA1 Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товар відсутній
IPS60R2K1CEAKMA1 Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e
IPS60R2K1CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товар відсутній
IPS60R400CEAKMA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPS60R400CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPS60R460CEAKMA1 Infineon-IPS60R460CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537ed5aa20222e
IPS60R460CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
товар відсутній
IPS60R650CEAKMA1 Infineon-IPS60R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f15f6c6228a
IPS60R650CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tj)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPS60R800CEAKMA1 Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590
IPS60R800CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPS65R400CEAKMA1 Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98
IPS65R400CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPS70R600CEAKMA2 Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a
Виробник: Infineon Technologies
Description: CONSUMER
товар відсутній
TDK5100FHTMA1 Part_Number_Guide_Web.pdf
TDK5100FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 6.9dBm
Applications: General Purpose
Current - Transmitting: 11.4mA
Antenna Connector: Castellation
Supplier Device Package: 10-TSSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
2EDN7524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7524GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+48.16 грн
Мінімальне замовлення: 4000
TLE7183FXUMA6 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA6
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMA7 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA7
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMA8 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA8
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMA9 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA9
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE7183FXUMB1 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMB1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товар відсутній
TLE98422QXXUMA1 Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511
TLE98422QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
TLE9842QXXUMA1 Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c
TLE9842QXXUMA1
Виробник: Infineon Technologies
Description: IC EMBEDDED POWER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+160.86 грн
Мінімальне замовлення: 2500
TLE98432QXXUMA1 Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b
TLE98432QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (52kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+180.45 грн
Мінімальне замовлення: 2500
TLE9843QXXUMA1 Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d
TLE9843QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+172.92 грн
Мінімальне замовлення: 2500
TLE9844QXXUMA1 Infineon-TLE9844QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1c8a87505
TLE9844QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+178.48 грн
Мінімальне замовлення: 2500
TLE82452SAAUMA1 TLE82452SA_rev1.0_2013-03-21.pdf
TLE82452SAAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-36
товар відсутній
TLE82453SAAUMA1 TLE82453SA_rev1.0_2013-03-21.pdf
TLE82453SAAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
товар відсутній
IPI50R140CPXKSA1 Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
товар відсутній
SPP20N60S5HKSA1 SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b
SPP20N60S5HKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
IPT65R033G7XTMA1 Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f
IPT65R033G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
товар відсутній
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