Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136447) > Сторінка 282 з 2275
Фото | Назва | Виробник | Інформація |
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MB89374-PFQ-G-BND | Infineon Technologies |
Description: IC MCU 8BIT FLASH Packaging: Bulk Part Status: Obsolete DigiKey Programmable: Not Verified |
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MB89615RPFM-G-1025-BNDE1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 64QFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Connectivity: Serial I/O Peripherals: POR, PWM, WDT Supplier Device Package: 64-QFP (12x12) Part Status: Obsolete Number of I/O: 53 DigiKey Programmable: Not Verified |
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MB89713APF-G-526-BND-TN | Infineon Technologies |
Description: IC MCU 8BIT 8KB MROM 80PQFP Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8MHz Program Memory Size: 8KB (8K x 8) RAM Size: 260 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8 Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: Serial I/O, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Number of I/O: 53 DigiKey Programmable: Not Verified |
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MB90561APMC-G-269-BNDE1 | Infineon Technologies |
Description: IC MCU 16BIT 32KB MROM 64LQFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (32K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: UART/USART Peripherals: POR, WDT Supplier Device Package: 64-LQFP (12x12) Part Status: Obsolete Number of I/O: 51 DigiKey Programmable: Not Verified |
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MB90673PF-G-269-BND-B | Infineon Technologies |
Description: IC MCU 16BIT 48KB MROM 80PQFP Packaging: Tray Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 48KB (48K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16L Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, SCI, UART/USART Peripherals: POR, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Obsolete Number of I/O: 65 DigiKey Programmable: Not Verified |
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MB89215-G-104-CHIP | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 320BGA Packaging: Tray Speed: 12.5MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 21 DigiKey Programmable: Not Verified |
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MB89485-G-212-CHIP-CN | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM Packaging: Tray Speed: 12.5MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: Serial I/O, UART/USART Peripherals: LCD, POR, PWM, WDT Part Status: Obsolete Number of I/O: 39 DigiKey Programmable: Not Verified |
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MB89193PF-G-317-BND-RE1 | Infineon Technologies |
Description: IC MCU 8BIT 8KB MROM 28SOP Packaging: Tube Package / Case: 28-SOIC (0.342", 8.69mm Width) Mounting Type: Surface Mount Speed: 4.2MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Connectivity: Serial I/O Peripherals: POR, WDT Supplier Device Package: 28-SOP Part Status: Obsolete Number of I/O: 16 DigiKey Programmable: Not Verified |
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MB90467PFM-G-258E1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB MROM 64QFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-QFP (12x12) Number of I/O: 51 DigiKey Programmable: Not Verified |
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MB89P568-101PFV-GE1 | Infineon Technologies |
Description: IC MCU 8BIT 48KB OTP 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 12.5MHz Program Memory Size: 48KB (48K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: F²MC-8L Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I²C, Serial I/O, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Part Status: Obsolete Number of I/O: 50 DigiKey Programmable: Not Verified |
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IHW25N120E1XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: PG-TO247-3 IGBT Type: NPT and Trench Switching Energy: 800µJ (off) Gate Charge: 147 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 231 W |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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ICE1CS02GXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 11V ~ 25V Frequency - Switching: 65kHz Mode: Average Current Supplier Device Package: PG-DSO-16-22 Part Status: Obsolete Current - Startup: 1.3 mA |
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IPA80R1K4P7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO220-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
на замовлення 607 шт: термін постачання 21-31 дні (днів) |
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IPS80R1K4P7AKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V |
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IPU80R1K4P7AKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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IPU80R4K5P7AKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Power Dissipation (Max): 13W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
на замовлення 1480 шт: термін постачання 21-31 дні (днів) |
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IPD80R1K4P7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IPD80R450P7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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IPD80R1K4P7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
на замовлення 17277 шт: термін постачання 21-31 дні (днів) |
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IPD80R450P7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V |
на замовлення 12167 шт: термін постачання 21-31 дні (днів) |
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PTFA080551EV4T500XWSA1 | Infineon Technologies | Description: IC FET RF LDMOS 55W H-36265-2 |
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PTFA211801EV5T350XWSA1 | Infineon Technologies | Description: IC RF FET LDMOS H-36260-2 |
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PTRA093302DC V1 | Infineon Technologies |
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IPP80R1K4P7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
на замовлення 505 шт: термін постачання 21-31 дні (днів) |
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IPP80R450P7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V |
на замовлення 6561 шт: термін постачання 21-31 дні (днів) |
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IPP80R280P7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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IPD80R280P7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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S70GL02GT11FHA010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Active Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256M x 8, 128M x 16 DigiKey Programmable: Not Verified |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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S70GL02GT11FHI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256M x 8, 128M x 16 DigiKey Programmable: Not Verified |
на замовлення 1788 шт: термін постачання 21-31 дні (днів) |
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IRFC3004EB | Infineon Technologies |
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IRFC3006EB | Infineon Technologies |
![]() Packaging: Bulk Part Status: Obsolete |
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IRFC3107EB | Infineon Technologies |
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IRFC3205ZEB | Infineon Technologies |
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IRFC3206EB | Infineon Technologies |
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IRFC3710ZEB | Infineon Technologies |
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IRFC4020D | Infineon Technologies |
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IRFC4104EB | Infineon Technologies |
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IRFC4115ED | Infineon Technologies |
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IRFC4127ED | Infineon Technologies |
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IRFC4227EB | Infineon Technologies |
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IRFC4227ED | Infineon Technologies |
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IRFC4332ED | Infineon Technologies |
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IRFC4368D | Infineon Technologies |
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IRFC4410ZEB | Infineon Technologies |
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IRFC4468D | Infineon Technologies |
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IRFC4468ED | Infineon Technologies |
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IRFC4568EF | Infineon Technologies |
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IRFC4668D | Infineon Technologies |
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IRFC4668EF | Infineon Technologies |
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IRFC4768ED | Infineon Technologies |
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IRFC8721ED | Infineon Technologies |
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IRLC3813EB | Infineon Technologies | Description: MOSFET N-CH WAFER |
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IRLC8259ED | Infineon Technologies | Description: MOSFET N-CH WAFER |
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IRS2092C | Infineon Technologies |
![]() Packaging: Bulk Output Type: 2-Channel (Stereo) Type: Class D Voltage - Supply: 3.3V, 5V Part Status: Obsolete |
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IRS2092CD | Infineon Technologies |
![]() Packaging: Bulk Output Type: 2-Channel (Stereo) Type: Class D Voltage - Supply: 3.3V, 5V Part Status: Obsolete |
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S25FS064SAGNFV030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-WLGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (5x6) Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
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S26KS128SDGBHV030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: Parallel Access Time: 96 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
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S26KS256SDPBHA020 | Infineon Technologies | Description: IC FLASH 256MBIT PAR 24FBGA |
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S26KS256SDPBHV020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: Parallel Access Time: 96 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
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TLE8261EXUMA3 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Type: Transceiver Supplier Device Package: PG-DSO-36-38 Grade: Automotive DigiKey Programmable: Not Verified |
товар відсутній |
MB89374-PFQ-G-BND |
Виробник: Infineon Technologies
Description: IC MCU 8BIT FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
MB89615RPFM-G-1025-BNDE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
MB89713APF-G-526-BND-TN |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 260 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 260 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
MB90561APMC-G-269-BNDE1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 32KB MROM 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB MROM 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
товар відсутній
MB90673PF-G-269-BND-B |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
товар відсутній
MB89215-G-104-CHIP |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 320BGA
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM 320BGA
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 21
DigiKey Programmable: Not Verified
товар відсутній
MB89485-G-212-CHIP-CN |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
товар відсутній
MB89193PF-G-317-BND-RE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
товар відсутній
MB90467PFM-G-258E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB MROM 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
товар відсутній
MB89P568-101PFV-GE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 48KB OTP 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 48KB OTP 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
IHW25N120E1XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT/TRENCH 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 800µJ (off)
Gate Charge: 147 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 231 W
Description: IGBT NPT/TRENCH 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 800µJ (off)
Gate Charge: 147 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 231 W
на замовлення 91 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 234.25 грн |
30+ | 178.75 грн |
ICE1CS02GXUMA1 |
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Виробник: Infineon Technologies
Description: IC PFC CTR AV CURR 65KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: PG-DSO-16-22
Part Status: Obsolete
Current - Startup: 1.3 mA
Description: IC PFC CTR AV CURR 65KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: PG-DSO-16-22
Part Status: Obsolete
Current - Startup: 1.3 mA
товар відсутній
IPA80R1K4P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 607 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 96.91 грн |
50+ | 75.01 грн |
100+ | 59.44 грн |
500+ | 47.28 грн |
IPS80R1K4P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
товар відсутній
IPU80R1K4P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.25 грн |
IPU80R4K5P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.94 грн |
75+ | 44 грн |
150+ | 31.94 грн |
525+ | 25.05 грн |
1050+ | 21.32 грн |
IPD80R1K4P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 30.18 грн |
5000+ | 27.68 грн |
12500+ | 26.4 грн |
IPD80R450P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 63.62 грн |
5000+ | 58.96 грн |
IPD80R1K4P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 17277 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.25 грн |
10+ | 57.46 грн |
100+ | 44.71 грн |
500+ | 35.57 грн |
1000+ | 28.98 грн |
IPD80R450P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 12167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 141.16 грн |
10+ | 112.86 грн |
100+ | 89.82 грн |
500+ | 71.32 грн |
1000+ | 60.52 грн |
PTFA080551EV4T500XWSA1 |
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 55W H-36265-2
Description: IC FET RF LDMOS 55W H-36265-2
товар відсутній
PTFA211801EV5T350XWSA1 |
Виробник: Infineon Technologies
Description: IC RF FET LDMOS H-36260-2
Description: IC RF FET LDMOS H-36260-2
товар відсутній
PTRA093302DC V1 |
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товар відсутній
IPP80R1K4P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 505 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 96.14 грн |
50+ | 73.95 грн |
100+ | 58.61 грн |
500+ | 46.61 грн |
IPP80R450P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 6561 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 150.32 грн |
50+ | 115.95 грн |
100+ | 95.39 грн |
500+ | 75.75 грн |
1000+ | 64.27 грн |
2000+ | 61.06 грн |
5000+ | 57.8 грн |
IPP80R280P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 151.08 грн |
50+ | 114.82 грн |
100+ | 98.42 грн |
IPD80R280P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 96.06 грн |
5000+ | 88.75 грн |
S70GL02GT11FHA010 |
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Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
на замовлення 205 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2515.75 грн |
10+ | 2278.49 грн |
25+ | 2199.47 грн |
40+ | 1998.84 грн |
180+ | 1759.54 грн |
S70GL02GT11FHI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
на замовлення 1788 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1916 грн |
10+ | 1734.97 грн |
25+ | 1674.78 грн |
40+ | 1522.01 грн |
180+ | 1339.8 грн |
360+ | 1303.75 грн |
IRFC3004EB |
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товар відсутній
IRFC3006EB |
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товар відсутній
IRFC3107EB |
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товар відсутній
IRFC3205ZEB |
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товар відсутній
IRFC3206EB |
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товар відсутній
IRFC3710ZEB |
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товар відсутній
IRFC4020D |
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товар відсутній
IRFC4104EB |
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товар відсутній
IRFC4115ED |
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товар відсутній
IRFC4127ED |
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товар відсутній
IRFC4227EB |
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товар відсутній
IRFC4227ED |
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товар відсутній
IRFC4332ED |
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товар відсутній
IRFC4368D |
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товар відсутній
IRFC4410ZEB |
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товар відсутній
IRFC4468D |
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товар відсутній
IRFC4468ED |
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товар відсутній
IRFC4568EF |
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товар відсутній
IRFC4668D |
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товар відсутній
IRFC4668EF |
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товар відсутній
IRFC4768ED |
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товар відсутній
IRFC8721ED |
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товар відсутній
IRS2092C |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
товар відсутній
IRS2092CD |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
товар відсутній
S25FS064SAGNFV030 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8LGA
Packaging: Tray
Package / Case: 8-WLGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 8LGA
Packaging: Tray
Package / Case: 8-WLGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товар відсутній
S26KS128SDGBHV030 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
S26KS256SDPBHA020 |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Description: IC FLASH 256MBIT PAR 24FBGA
товар відсутній
S26KS256SDPBHV020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товар відсутній
TLE8261EXUMA3 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Supplier Device Package: PG-DSO-36-38
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Supplier Device Package: PG-DSO-36-38
Grade: Automotive
DigiKey Programmable: Not Verified
товар відсутній