IRG7PH46UD-EP

IRG7PH46UD-EP Infineon Technologies


3240irg7ph46udpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 108A 390000mW 3-Pin(3+Tab) TO-247AD Tube
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Технічний опис IRG7PH46UD-EP Infineon Technologies

Description: IGBT 1200V 108A COPAK247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247AD, IGBT Type: Trench, Td (on/off) @ 25°C: 45ns/410ns, Switching Energy: 2.61mJ (on), 1.85mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 220 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 390 W.

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IRG7PH46UD-EP IRG7PH46UD-EP Виробник : Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 1200V 108A COPAK247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.61mJ (on), 1.85mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
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IRG7PH46UD-EP IRG7PH46UD-EP Виробник : Infineon Technologies irsds18739_1-2271491.pdf IGBT Transistors INDUSTRY 59
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IRG7PH46UD-EP IRG7PH46UD-EP Виробник : INFINEON TECHNOLOGIES irg7ph46udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 57A
Power dissipation: 390W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
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