Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6099) > Сторінка 81 з 102
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WNSC051200Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.4V кількість в упаковці: 1000 шт |
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| WNSC06650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A кількість в упаковці: 3000 шт |
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| WNSC08650T6J | WeEn Semiconductors |
WNSC08650T6J SMD Schottky diodes |
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WNSC101200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.6V кількість в упаковці: 1 шт |
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WNSC101200Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.4V кількість в упаковці: 1000 шт |
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WNSC101200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 20A Max. forward voltage: 1.4V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 110A Kind of package: tube кількість в упаковці: 1 шт |
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| WNSC10650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 3000 шт |
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WNSC10650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 50A кількість в упаковці: 1200 шт |
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| WNSC12650T6J | WeEn Semiconductors |
WNSC12650T6J SMD Schottky diodes |
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WNSC12650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 72A кількість в упаковці: 1200 шт |
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WNSC16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube кількість в упаковці: 480 шт |
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WNSC201200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 110A Load current: 10A x2 кількість в упаковці: 1 шт |
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WNSC201200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.4V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 220A Kind of package: tube кількість в упаковці: 1 шт |
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WNSC2D04650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 24A кількість в упаковці: 7500 шт |
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| WNSC2D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A Max. forward voltage: 2.2V кількість в упаковці: 1 шт |
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| WNSC2D04650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 24A кількість в упаковці: 3000 шт |
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WNSC2D04650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 20A кількість в упаковці: 3000 шт |
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WNSC2D06650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A кількість в упаковці: 2500 шт |
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| WNSC2D06650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 36A Load current: 6A кількість в упаковці: 3000 шт |
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WNSC2D06650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 30A Load current: 6A кількість в упаковці: 3000 шт |
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WNSC2D08650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A кількість в упаковці: 7500 шт |
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| WNSC2D08650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A кількість в упаковці: 3000 шт |
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WNSC2D101200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.88V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 72A Kind of package: tube кількість в упаковці: 3000 шт |
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| WNSC2D10650BJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Max. forward voltage: 2.2V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 1 шт |
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WNSC2D10650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 2500 шт |
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| WNSC2D10650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 3000 шт |
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WNSC2D10650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A кількість в упаковці: 3000 шт |
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WNSC2D151200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.95V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 102A Kind of package: tube кількість в упаковці: 3000 шт |
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WNSC2D16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A Max. forward voltage: 1.8V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 48A кількість в упаковці: 240 шт |
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WNSC2D201200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 72A Load current: 10A x2 кількість в упаковці: 480 шт |
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WNSC2D201200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 125A Kind of package: tube кількість в упаковці: 3000 шт |
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WNSC2D20650CJQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube кількість в упаковці: 2400 шт |
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WNSC2D20650CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube кількість в упаковці: 480 шт |
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WNSC2D301200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 30A Type of diode: Schottky rectifying Max. forward impulse current: 102A Load current: 15A x2 кількість в упаковці: 600 шт |
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WNSC2D401200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 125A Kind of package: tube кількість в упаковці: 600 шт |
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| WNSC2D401200W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 80A Max. forward voltage: 2.5V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 350A Kind of package: tube кількість в упаковці: 1 шт |
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| WNSC2D501200W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 100A Max. forward voltage: 2.5V Load current: 50A Semiconductor structure: single diode Max. forward impulse current: 420A Kind of package: tube кількість в упаковці: 1 шт |
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| WNSC2M1K0170WQ | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 240 шт |
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| WNSC2M20120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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| WNSC2M40120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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WNSC401200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 200A Kind of package: tube кількість в упаковці: 480 шт |
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| WNSC5D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 28A Max. forward voltage: 2.2V кількість в упаковці: 1 шт |
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| WNSC5D04650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 26A Max. forward voltage: 2.2V кількість в упаковці: 1 шт |
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| WNSC5D06650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.2V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A кількість в упаковці: 3000 шт |
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| WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. load current: 40A Max. forward impulse current: 80A Kind of package: tube кількість в упаковці: 1 шт |
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| WNSC6D01650MBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: SMB Kind of package: reel; tape Max. forward impulse current: 18A кількість в упаковці: 1 шт |
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| WNSC6D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 36A Max. forward voltage: 1.55V кількість в упаковці: 1000 шт |
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WNSC6D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 30A кількість в упаковці: 3000 шт |
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WNSC6D06650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 46A кількість в упаковці: 3000 шт |
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| WNSC6D06650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.55V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 45A кількість в упаковці: 3000 шт |
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| WNSC6D08650Q | WeEn Semiconductors | WNSC6D08650Q THT Schottky diodes |
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| WNSC6D10650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 80A кількість в упаковці: 1 шт |
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WNSC6D10650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 75A кількість в упаковці: 3000 шт |
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| WNSC6D16650CW6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Max. forward impulse current: 110A кількість в упаковці: 1 шт |
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| WNSC6D20650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 120A Kind of package: reel; tape кількість в упаковці: 1 шт |
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WNSC6D20650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 155A Kind of package: tube кількість в упаковці: 1200 шт |
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| WNSCM80120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 81A Power dissipation: 270W Case: TO247-4 Gate-source voltage: -10...25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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Z0103MA,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 389 шт: термін постачання 14-21 дні (днів) |
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Z0103MA,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: Ammo Pack кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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Z0103MA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 1 шт |
товар відсутній |
| WNSC051200Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 65A
Max. forward voltage: 1.4V
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 65A
Max. forward voltage: 1.4V
кількість в упаковці: 1000 шт
товар відсутній
| WNSC06650T6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC101200CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 65A
Max. forward voltage: 1.6V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 65A
Max. forward voltage: 1.6V
кількість в упаковці: 1 шт
товар відсутній
| WNSC101200Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.4V
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 110A
Max. forward voltage: 1.4V
кількість в упаковці: 1000 шт
товар відсутній
| WNSC101200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| WNSC10650T6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC10650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 1200 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 1200 шт
товар відсутній
| WNSC12650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 72A
кількість в упаковці: 1200 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 72A
кількість в упаковці: 1200 шт
товар відсутній
| WNSC16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
кількість в упаковці: 480 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
кількість в упаковці: 480 шт
товар відсутній
| WNSC201200CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 110A
Load current: 10A x2
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 110A
Load current: 10A x2
кількість в упаковці: 1 шт
товар відсутній
| WNSC201200WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| WNSC2D04650DJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 7500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 7500 шт
товар відсутній
| WNSC2D04650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
| WNSC2D04650TJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D04650XQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 20A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 20A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D06650DJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 2500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 2500 шт
товар відсутній
| WNSC2D06650TJ |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 36A
Load current: 6A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D06650XQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Load current: 6A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Load current: 6A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D08650DJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 7500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 7500 шт
товар відсутній
| WNSC2D08650TJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D101200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.88V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 72A
Kind of package: tube
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.88V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 72A
Kind of package: tube
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D10650BJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 1 шт
товар відсутній
| WNSC2D10650DJ |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 2500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 2500 шт
товар відсутній
| WNSC2D10650TJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D10650XQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D151200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 102A
Kind of package: tube
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 102A
Kind of package: tube
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D16650CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Max. forward voltage: 1.8V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 48A
кількість в упаковці: 240 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 16A
Max. forward voltage: 1.8V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 48A
кількість в упаковці: 240 шт
товар відсутній
| WNSC2D201200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A x2
кількість в упаковці: 480 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A x2
кількість в упаковці: 480 шт
товар відсутній
| WNSC2D201200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Kind of package: tube
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Kind of package: tube
кількість в упаковці: 3000 шт
товар відсутній
| WNSC2D20650CJQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
кількість в упаковці: 2400 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
кількість в упаковці: 2400 шт
товар відсутній
| WNSC2D20650CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
кількість в упаковці: 480 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
кількість в упаковці: 480 шт
товар відсутній
| WNSC2D301200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A x2
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A x2
кількість в упаковці: 600 шт
товар відсутній
| WNSC2D401200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 125A
Kind of package: tube
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 125A
Kind of package: tube
кількість в упаковці: 600 шт
товар відсутній
| WNSC2D401200W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 80A
Max. forward voltage: 2.5V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 350A
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 80A
Max. forward voltage: 2.5V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 350A
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| WNSC2D501200W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 100A
Max. forward voltage: 2.5V
Load current: 50A
Semiconductor structure: single diode
Max. forward impulse current: 420A
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 100A
Max. forward voltage: 2.5V
Load current: 50A
Semiconductor structure: single diode
Max. forward impulse current: 420A
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| WNSC2M1K0170WQ |
|
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 240 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 240 шт
товар відсутній
| WNSC2M20120R6Q |
|
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
| WNSC2M40120R6Q |
|
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
| WNSC401200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 200A
Kind of package: tube
кількість в упаковці: 480 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 200A
Kind of package: tube
кількість в упаковці: 480 шт
товар відсутній
| WNSC5D046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
| WNSC5D04650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
| WNSC5D06650T6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC5D20650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| WNSC6D01650MBJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
кількість в упаковці: 1 шт
товар відсутній
| WNSC6D046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
кількість в упаковці: 1000 шт
товар відсутній
| WNSC6D04650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC6D06650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC6D06650T6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC6D10650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
товар відсутній
| WNSC6D10650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
кількість в упаковці: 3000 шт
товар відсутній
| WNSC6D16650CW6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
товар відсутній
| WNSC6D20650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 120A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 120A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| WNSC6D20650WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
кількість в упаковці: 1200 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
кількість в упаковці: 1200 шт
товар відсутній
| WNSCM80120R6Q |
|
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
| Z0103MA,116 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 389 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.79 грн |
| 28+ | 10.28 грн |
| 100+ | 8.83 грн |
| 126+ | 8.2 грн |
| 346+ | 7.84 грн |
| 2500+ | 7.49 грн |
| Z0103MA,126 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.8 грн |
| 25+ | 11.11 грн |
| 100+ | 8.83 грн |
| 128+ | 8.11 грн |
| 353+ | 7.67 грн |
| 2500+ | 7.4 грн |
| Z0103MA,412 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
товар відсутній