Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6099) > Сторінка 78 з 102
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BYV410-600,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 132A кількість в упаковці: 1 шт |
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BYV410X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 20ns Max. forward impulse current: 137A кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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BYV410X-600/L01Q | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 132A кількість в упаковці: 3000 шт |
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BYV410X-600PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; Ufmax: 1.3V Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 120A кількість в упаковці: 1 шт |
на замовлення 845 шт: термін постачання 14-21 дні (днів) |
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BYV415J-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.1V кількість в упаковці: 2400 шт |
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BYV415K-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1.1V Case: SOT1259; TO3P Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 140A Load current: 15A x2 Max. off-state voltage: 0.6kV кількість в упаковці: 900 шт |
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BYV415W-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3 Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1.1V Case: TO247-3 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Load current: 15A x2 Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
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BYV42E-150,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 0.78V Heatsink thickness: max. 1.3mm кількість в упаковці: 1 шт |
на замовлення 471 шт: термін постачання 14-21 дні (днів) |
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BYV42E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1V Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns кількість в упаковці: 1 шт |
на замовлення 688 шт: термін постачання 14-21 дні (днів) |
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BYV42EB-200,118 | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A Case: D2PAK; SOT404 Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 200V Max. load current: 30A Max. forward voltage: 0.85V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 28ns Max. forward impulse current: 160A кількість в упаковці: 1 шт |
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BYV42G-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK Semiconductor structure: common cathode; double Max. forward impulse current: 150A Max. load current: 30A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: I2PAK Max. forward voltage: 0.78V Mounting: THT Load current: 15A x2 кількість в упаковці: 2000 шт |
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BYV430J-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 1.25V кількість в упаковці: 2400 шт |
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BYV430K-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P Mounting: THT Case: SOT1259; TO3P Kind of package: tube Max. forward impulse current: 300A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 300V Max. load current: 60A Max. forward voltage: 0.85V Load current: 30A x2 Semiconductor structure: common cathode; double кількість в упаковці: 900 шт |
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BYV430W-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1V Case: TO247-3 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward impulse current: 330A Reverse recovery time: 50ns Load current: 15A x2 Max. off-state voltage: 300V кількість в упаковці: 1 шт |
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BYV430W-600PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 2V Case: TO247-3 Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 180A Reverse recovery time: 90ns Load current: 30A x2 Max. off-state voltage: 0.6kV кількість в упаковці: 600 шт |
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BYV44-500,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1.15V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns кількість в упаковці: 1 шт |
на замовлення 271 шт: термін постачання 14-21 дні (днів) |
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BYV5ED-600PJ | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward impulse current: 70A Kind of package: reel; tape кількість в упаковці: 7500 шт |
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BYV60W-600PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; Ufmax: 1.2V; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 600A Case: TO247AC Modified Max. forward voltage: 1.2V Reverse recovery time: 55ns кількість в упаковці: 1 шт |
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BYV60W-600PT2Q | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 40ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 120A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 600A Case: TO247-2 Max. forward voltage: 1.4V Reverse recovery time: 40ns кількість в упаковці: 1 шт |
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BYV72EW-200,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns Semiconductor structure: common cathode; double Reverse recovery time: 28ns Max. forward impulse current: 185A Max. load current: 30A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Case: TO247-3 Max. forward voltage: 1.2V Mounting: THT Load current: 15A x2 кількість в упаковці: 1 шт |
на замовлення 226 шт: термін постачання 14-21 дні (днів) |
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BYV74W-400,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns Mounting: THT Kind of package: tube Type of diode: rectifying Case: TO247-3 Max. off-state voltage: 0.4kV Max. load current: 30A Max. forward voltage: 1.36V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 185A кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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BYV79E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 160A Case: SOD59; TO220AC Max. forward voltage: 0.83V Heatsink thickness: max. 1.3mm Reverse recovery time: 30ns кількість в упаковці: 1 шт |
на замовлення 1154 шт: термін постачання 14-21 дні (днів) |
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BYW29E-100,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.895V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 752 шт: термін постачання 14-21 дні (днів) |
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BYW29E-150,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.8V Heatsink thickness: 1.15...1.4mm Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 994 шт: термін постачання 14-21 дні (днів) |
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BYW29E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.8V Heatsink thickness: 1.15...1.4mm Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 1443 шт: термін постачання 14-21 дні (днів) |
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BYW29ED-200,118 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A Mounting: SMD Case: DPAK Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 200V Max. forward voltage: 0.8V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 80A кількість в упаковці: 1 шт |
на замовлення 1581 шт: термін постачання 14-21 дні (днів) |
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BYW29EX-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD113; TO220FP-2 Max. forward voltage: 0.8V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 471 шт: термін постачання 14-21 дні (днів) |
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EC103D1,116 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape Mounting: THT Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Max. forward impulse current: 8A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: TO92 Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
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EC103D1,412 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A Mounting: THT Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Max. forward impulse current: 8A Turn-on time: 2µs Kind of package: bulk Type of thyristor: thyristor Case: TO92 Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
на замовлення 1637 шт: термін постачання 14-21 дні (днів) |
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EC103D1WF | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A Mounting: SMD Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Max. forward impulse current: 9A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 Max. off-state voltage: 0.4kV кількість в упаковці: 5 шт |
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EC103D1WX | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape Mounting: SMD Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Max. forward impulse current: 8A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
на замовлення 269 шт: термін постачання 14-21 дні (днів) |
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ESDAHD712BE2X | WeEn Semiconductors |
![]() Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 19A Peak pulse power dissipation: 0.5kW Semiconductor structure: asymmetric; bidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 7...12V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Manufacturer series: HD кількість в упаковці: 90000 шт |
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ESDALD03BCX | WeEn Semiconductors |
![]() Description: Diode: diode arrays; 4.5V; 20A; 350W; bidirectional; SOD323; Ch: 1 Case: SOD323 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Manufacturer series: LD Leakage current: 1µA Type of diode: diode arrays Features of semiconductor devices: ESD protection Peak pulse power dissipation: 350W Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 20A Breakdown voltage: 4.5V кількість в упаковці: 90000 шт |
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ESDALD05BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD Case: SOD323 Mounting: SMD Manufacturer series: LD Number of channels: 1 Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Semiconductor structure: bidirectional Max. forward impulse current: 15A Breakdown voltage: 6.5V Leakage current: 1µA кількість в упаковці: 90000 шт |
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ESDALD05UD4X | WeEn Semiconductors |
![]() Description: Diode: diode arrays; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4 Type of diode: diode arrays Breakdown voltage: 6V Max. forward impulse current: 5.5A Peak pulse power dissipation: 88W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Manufacturer series: LD кількість в упаковці: 90000 шт |
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ESDALD05UE2X | WeEn Semiconductors |
![]() Description: Diode: diode arrays; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2 Type of diode: diode arrays Breakdown voltage: 6V Max. forward impulse current: 4A Peak pulse power dissipation: 60W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape Manufacturer series: LD кількість в упаковці: 90000 шт |
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ESDALD05UG4X | WeEn Semiconductors |
![]() Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 4A Peak pulse power dissipation: 60W Semiconductor structure: unidirectional Mounting: SMD Case: DFN2510 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Manufacturer series: LD кількість в упаковці: 90000 шт |
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ESDALD05UJ2X | WeEn Semiconductors |
![]() Description: Diode: diode arrays; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2 Type of diode: diode arrays Breakdown voltage: 6V Max. forward impulse current: 8A Peak pulse power dissipation: 136W Semiconductor structure: unidirectional Mounting: SMD Case: SOT143 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape Manufacturer series: LD кількість в упаковці: 90000 шт |
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ESDALD08BCX | WeEn Semiconductors |
![]() Description: Diode: diode arrays; 8.5V; 15A; 350W; bidirectional; SOD323; Ch: 1 Type of diode: diode arrays Breakdown voltage: 8.5V Max. forward impulse current: 15A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 8V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Manufacturer series: LD кількість в упаковці: 90000 шт |
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ESDALD12BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1 Mounting: SMD Manufacturer series: LD Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.35kW Case: SOD323 Max. off-state voltage: 12V Semiconductor structure: bidirectional Max. forward impulse current: 10A Breakdown voltage: 13.3V Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape кількість в упаковці: 90000 шт |
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ESDALD15BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD Type of diode: TVS array Kind of package: reel; tape Case: SOD323 Mounting: SMD Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.35kW Max. off-state voltage: 15V Max. forward impulse current: 8A Breakdown voltage: 16.5V Number of channels: 1 Features of semiconductor devices: ESD protection Manufacturer series: LD кількість в упаковці: 90000 шт |
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ESDALD18BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD Type of diode: TVS array Breakdown voltage: 19V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 18V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Manufacturer series: LD кількість в упаковці: 90000 шт |
товар відсутній |
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ESDALD24BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD Type of diode: TVS array Case: SOD323 Max. off-state voltage: 24V Semiconductor structure: bidirectional Max. forward impulse current: 6A Breakdown voltage: 26V Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Features of semiconductor devices: ESD protection Manufacturer series: LD Peak pulse power dissipation: 0.35kW Mounting: SMD кількість в упаковці: 90000 шт |
товар відсутній |
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ESDALD36BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD Mounting: SMD Manufacturer series: LD Kind of package: reel; tape Breakdown voltage: 38V Leakage current: 1µA Number of channels: 1 Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.35kW Case: SOD323 Max. off-state voltage: 36V Semiconductor structure: bidirectional Max. forward impulse current: 3A кількість в упаковці: 90000 шт |
товар відсутній |
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ESDHD03UFX | WeEn Semiconductors |
![]() Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1 Mounting: SMD Case: DFN1006-2 Manufacturer series: HD Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. forward impulse current: 24A Breakdown voltage: 4...8V Leakage current: 1µA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V кількість в упаковці: 10000 шт |
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ESDHD05UFX | WeEn Semiconductors |
![]() Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape Type of diode: TVS Peak pulse power dissipation: 320W Max. off-state voltage: 5V Breakdown voltage: 6...9.5V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Manufacturer series: HD кількість в упаковці: 10000 шт |
товар відсутній |
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ESDUD05BFX | WeEn Semiconductors |
![]() Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 88W Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Manufacturer series: UD кількість в упаковці: 300000 шт |
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MAC223A6,127 | WeEn Semiconductors |
![]() Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q Case: TO220AB Mounting: THT Kind of package: tube Max. load current: 25A Gate current: 50/75mA Max. forward impulse current: 190A Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
на замовлення 938 шт: термін постачання 14-21 дні (днів) |
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MAC223A8X,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. load current: 20A Gate current: 50/75mA Max. forward impulse current: 190A Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
на замовлення 818 шт: термін постачання 14-21 дні (днів) |
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MAC97A6,116 | WeEn Semiconductors |
![]() Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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MAC97A6,412 | WeEn Semiconductors |
![]() Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 1 шт |
на замовлення 3551 шт: термін постачання 14-21 дні (днів) |
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MAC97A8,116 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1271 шт: термін постачання 14-21 дні (днів) |
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MAC97A8,412 | WeEn Semiconductors |
![]() ![]() ![]() Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 1 шт |
на замовлення 4090 шт: термін постачання 14-21 дні (днів) |
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MCR08BT1,115 | WeEn Semiconductors |
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на замовлення 660 шт: термін постачання 14-21 дні (днів) |
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MUR320J | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 160A Case: SMC кількість в упаковці: 12000 шт |
товар відсутній |
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MUR440J | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 140A Case: SMC кількість в упаковці: 12000 шт |
товар відсутній |
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MUR560J | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.35V Max. forward impulse current: 130A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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MUR860J | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 180A Case: SMC Max. forward voltage: 1.25V Reverse recovery time: 90ns кількість в упаковці: 3000 шт |
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MURS160BJ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Mounting: SMD Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.25V кількість в упаковці: 3000 шт |
товар відсутній |
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MURS360BJ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.88V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5999 шт: термін постачання 14-21 дні (днів) |
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BYV410-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 132A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 132A
кількість в упаковці: 1 шт
товар відсутній
BYV410X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 96 грн |
5+ | 82.39 грн |
17+ | 63.29 грн |
46+ | 59.73 грн |
500+ | 57.94 грн |
BYV410X-600/L01Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 132A
кількість в упаковці: 3000 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 132A
кількість в упаковці: 3000 шт
товар відсутній
BYV410X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
на замовлення 845 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.96 грн |
5+ | 63.32 грн |
22+ | 48.14 грн |
60+ | 45.46 грн |
500+ | 44.93 грн |
BYV415J-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
кількість в упаковці: 2400 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
кількість в упаковці: 2400 шт
товар відсутній
BYV415K-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: SOT1259; TO3P
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Load current: 15A x2
Max. off-state voltage: 0.6kV
кількість в упаковці: 900 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: SOT1259; TO3P
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Load current: 15A x2
Max. off-state voltage: 0.6kV
кількість в упаковці: 900 шт
товар відсутній
BYV415W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Load current: 15A x2
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Load current: 15A x2
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
товар відсутній
BYV42E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Heatsink thickness: max. 1.3mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Heatsink thickness: max. 1.3mm
кількість в упаковці: 1 шт
на замовлення 471 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 81.6 грн |
5+ | 71.28 грн |
19+ | 55.27 грн |
52+ | 51.7 грн |
250+ | 50.81 грн |
BYV42E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
кількість в упаковці: 1 шт
на замовлення 688 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.44 грн |
5+ | 74.06 грн |
19+ | 56.16 грн |
51+ | 53.49 грн |
500+ | 50.81 грн |
BYV42EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Case: D2PAK; SOT404
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.85V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Case: D2PAK; SOT404
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.85V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
товар відсутній
BYV42G-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Max. load current: 30A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: I2PAK
Max. forward voltage: 0.78V
Mounting: THT
Load current: 15A x2
кількість в упаковці: 2000 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Max. load current: 30A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: I2PAK
Max. forward voltage: 0.78V
Mounting: THT
Load current: 15A x2
кількість в упаковці: 2000 шт
товар відсутній
BYV430J-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.25V
кількість в упаковці: 2400 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.25V
кількість в упаковці: 2400 шт
товар відсутній
BYV430K-300PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Max. forward impulse current: 300A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 300V
Max. load current: 60A
Max. forward voltage: 0.85V
Load current: 30A x2
Semiconductor structure: common cathode; double
кількість в упаковці: 900 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Max. forward impulse current: 300A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 300V
Max. load current: 60A
Max. forward voltage: 0.85V
Load current: 30A x2
Semiconductor structure: common cathode; double
кількість в упаковці: 900 шт
товар відсутній
BYV430W-300PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Reverse recovery time: 50ns
Load current: 15A x2
Max. off-state voltage: 300V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Reverse recovery time: 50ns
Load current: 15A x2
Max. off-state voltage: 300V
кількість в упаковці: 1 шт
товар відсутній
BYV430W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Reverse recovery time: 90ns
Load current: 30A x2
Max. off-state voltage: 0.6kV
кількість в упаковці: 600 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Reverse recovery time: 90ns
Load current: 30A x2
Max. off-state voltage: 0.6kV
кількість в упаковці: 600 шт
товар відсутній
BYV44-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
кількість в упаковці: 1 шт
на замовлення 271 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.05 грн |
10+ | 104.3 грн |
18+ | 57.05 грн |
50+ | 54.38 грн |
BYV5ED-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward impulse current: 70A
Kind of package: reel; tape
кількість в упаковці: 7500 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward impulse current: 70A
Kind of package: reel; tape
кількість в упаковці: 7500 шт
товар відсутній
BYV60W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; Ufmax: 1.2V; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247AC Modified
Max. forward voltage: 1.2V
Reverse recovery time: 55ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; Ufmax: 1.2V; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247AC Modified
Max. forward voltage: 1.2V
Reverse recovery time: 55ns
кількість в упаковці: 1 шт
товар відсутній
BYV60W-600PT2Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 120A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247-2
Max. forward voltage: 1.4V
Reverse recovery time: 40ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 120A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 600A
Case: TO247-2
Max. forward voltage: 1.4V
Reverse recovery time: 40ns
кількість в упаковці: 1 шт
товар відсутній
BYV72EW-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Max. load current: 30A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. forward voltage: 1.2V
Mounting: THT
Load current: 15A x2
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Max. load current: 30A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. forward voltage: 1.2V
Mounting: THT
Load current: 15A x2
кількість в упаковці: 1 шт
на замовлення 226 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111.36 грн |
5+ | 96.27 грн |
16+ | 66.86 грн |
43+ | 63.29 грн |
BYV74W-400,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.52 грн |
5+ | 93.5 грн |
16+ | 68.64 грн |
42+ | 65.07 грн |
BYV79E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
на замовлення 1154 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 56.47 грн |
25+ | 50.81 грн |
28+ | 37.44 грн |
76+ | 34.77 грн |
BYW29E-100,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 752 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.36 грн |
8+ | 36.84 грн |
25+ | 31.38 грн |
36+ | 28.44 грн |
100+ | 26.83 грн |
250+ | 26.21 грн |
BYW29E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 994 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.36 грн |
8+ | 38.69 грн |
25+ | 33.87 грн |
39+ | 26.39 грн |
107+ | 24.96 грн |
500+ | 24.87 грн |
BYW29E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 1443 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 66.24 грн |
7+ | 40.36 грн |
25+ | 31.38 грн |
37+ | 28.08 грн |
100+ | 27.99 грн |
101+ | 26.56 грн |
500+ | 25.49 грн |
BYW29ED-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
на замовлення 1581 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.88 грн |
7+ | 44.8 грн |
42+ | 24.96 грн |
115+ | 23.53 грн |
2500+ | 23.36 грн |
5000+ | 22.73 грн |
BYW29EX-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 471 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.36 грн |
9+ | 32.59 грн |
25+ | 25.41 грн |
45+ | 22.91 грн |
123+ | 21.66 грн |
500+ | 21.22 грн |
EC103D1,116 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Mounting: THT
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: TO92
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Mounting: THT
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: TO92
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
товар відсутній
EC103D1,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Mounting: THT
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: bulk
Type of thyristor: thyristor
Case: TO92
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Mounting: THT
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: bulk
Type of thyristor: thyristor
Case: TO92
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
на замовлення 1637 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.48 грн |
35+ | 8.05 грн |
100+ | 6.95 грн |
176+ | 5.97 грн |
484+ | 5.62 грн |
1000+ | 5.53 грн |
EC103D1WF |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A
Mounting: SMD
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 9A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 0.4kV
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A
Mounting: SMD
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 9A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 0.4kV
кількість в упаковці: 5 шт
товар відсутній
EC103D1WX |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
на замовлення 269 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.79 грн |
26+ | 10.92 грн |
100+ | 9.27 грн |
124+ | 8.47 грн |
250+ | 8.29 грн |
339+ | 8.02 грн |
1000+ | 7.76 грн |
ESDAHD712BE2X |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD03BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 4.5V; 20A; 350W; bidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: LD
Leakage current: 1µA
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 350W
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 20A
Breakdown voltage: 4.5V
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 4.5V; 20A; 350W; bidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: LD
Leakage current: 1µA
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 350W
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 20A
Breakdown voltage: 4.5V
кількість в упаковці: 90000 шт
товар відсутній
ESDALD05BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Case: SOD323
Mounting: SMD
Manufacturer series: LD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.5V
Leakage current: 1µA
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Case: SOD323
Mounting: SMD
Manufacturer series: LD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.5V
Leakage current: 1µA
кількість в упаковці: 90000 шт
товар відсутній
ESDALD05UD4X |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 88W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 88W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD05UE2X |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD05UG4X |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD05UJ2X |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 8A
Peak pulse power dissipation: 136W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 8A
Peak pulse power dissipation: 136W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD08BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 8.5V; 15A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: diode arrays
Breakdown voltage: 8.5V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 8V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 8.5V; 15A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: diode arrays
Breakdown voltage: 8.5V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 8V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD12BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Manufacturer series: LD
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Manufacturer series: LD
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
кількість в упаковці: 90000 шт
товар відсутній
ESDALD15BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 15V
Max. forward impulse current: 8A
Breakdown voltage: 16.5V
Number of channels: 1
Features of semiconductor devices: ESD protection
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 15V
Max. forward impulse current: 8A
Breakdown voltage: 16.5V
Number of channels: 1
Features of semiconductor devices: ESD protection
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD18BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Breakdown voltage: 19V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 18V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Breakdown voltage: 19V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 18V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD24BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Case: SOD323
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Max. forward impulse current: 6A
Breakdown voltage: 26V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Case: SOD323
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Max. forward impulse current: 6A
Breakdown voltage: 26V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
кількість в упаковці: 90000 шт
товар відсутній
ESDALD36BCX |
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Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD
Mounting: SMD
Manufacturer series: LD
Kind of package: reel; tape
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
кількість в упаковці: 90000 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD
Mounting: SMD
Manufacturer series: LD
Kind of package: reel; tape
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
кількість в упаковці: 90000 шт
товар відсутній
ESDHD03UFX |
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Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Case: DFN1006-2
Manufacturer series: HD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 24A
Breakdown voltage: 4...8V
Leakage current: 1µA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
кількість в упаковці: 10000 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Case: DFN1006-2
Manufacturer series: HD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 24A
Breakdown voltage: 4...8V
Leakage current: 1µA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
кількість в упаковці: 10000 шт
товар відсутній
ESDHD05UFX |
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Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 320W
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: HD
кількість в упаковці: 10000 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 320W
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: HD
кількість в упаковці: 10000 шт
товар відсутній
ESDUD05BFX |
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Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 88W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: UD
кількість в упаковці: 300000 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 88W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: UD
кількість в упаковці: 300000 шт
товар відсутній
MAC223A6,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
на замовлення 938 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.8 грн |
5+ | 69.61 грн |
22+ | 47.78 грн |
61+ | 45.2 грн |
MAC223A8X,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
на замовлення 818 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 99.84 грн |
21+ | 52.58 грн |
57+ | 47.87 грн |
MAC97A6,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
MAC97A6,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 3551 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.88 грн |
14+ | 20.18 грн |
25+ | 15.33 грн |
100+ | 10.16 грн |
158+ | 6.69 грн |
434+ | 6.24 грн |
5000+ | 6.06 грн |
MAC97A8,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1271 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.72 грн |
13+ | 22.87 грн |
100+ | 12.48 грн |
145+ | 7.13 грн |
399+ | 6.77 грн |
30000+ | 6.51 грн |
MAC97A8,412 | ![]() |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 4090 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.96 грн |
16+ | 18.42 грн |
100+ | 10.16 грн |
149+ | 6.95 грн |
409+ | 6.6 грн |
MCR08BT1,115 |
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Виробник: WeEn Semiconductors
MCR08BT1.115 SMD/THT thyristors
MCR08BT1.115 SMD/THT thyristors
на замовлення 660 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 16.42 грн |
100+ | 10.43 грн |
275+ | 9.89 грн |
MUR320J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
кількість в упаковці: 12000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
кількість в упаковці: 12000 шт
товар відсутній
MUR440J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
кількість в упаковці: 12000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
кількість в упаковці: 12000 шт
товар відсутній
MUR560J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.79 грн |
25+ | 15 грн |
91+ | 11.59 грн |
248+ | 10.96 грн |
3000+ | 10.7 грн |
MUR860J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: SMC
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: SMC
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
кількість в упаковці: 3000 шт
товар відсутній
MURS160BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
кількість в упаковці: 3000 шт
товар відсутній
MURS360BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5999 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.79 грн |
25+ | 11.94 грн |
100+ | 10.16 грн |
113+ | 9.27 грн |
310+ | 8.74 грн |
3000+ | 8.56 грн |