Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6219) > Сторінка 80 з 104
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MAC97A8,412 | WeEn Semiconductors |
 Category: TriacsDescription: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 1 шт |
на замовлення 3850 шт: термін постачання 14-21 дні (днів) |
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| MCR08BT1,115 | WeEn Semiconductors |
MCR08BT1.115 SMD/THT thyristors |
на замовлення 660 шт: термін постачання 14-21 дні (днів) |
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MUR320J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 160A Case: SMC кількість в упаковці: 12000 шт |
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MUR440J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 140A Case: SMC кількість в упаковці: 12000 шт |
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MUR560J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.35V Max. forward impulse current: 130A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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MUR860J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 180A Case: SMC Max. forward voltage: 1.25V Reverse recovery time: 90ns кількість в упаковці: 3000 шт |
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| MURS160BJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Mounting: SMD Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.25V кількість в упаковці: 3000 шт |
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MURS360BJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.88V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5999 шт: термін постачання 14-21 дні (днів) |
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| N0118GA,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 7uA; TO92; THT; bulk Load current: 0.51A Gate current: 7µA Max. forward impulse current: 9A Kind of package: bulk Case: TO92 Mounting: THT Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A кількість в упаковці: 5 шт |
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| NCR100Q-6MX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 100uA; SOT89; SMD; Ifsm: 9A Mounting: SMD Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT89 Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.51A Gate current: 100µA Max. forward impulse current: 9A кількість в упаковці: 5 шт |
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| NCR100W-10LX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A Mounting: SMD Max. off-state voltage: 850V Max. load current: 1.1A Load current: 0.8A Gate current: 50µA Max. forward impulse current: 11A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 кількість в упаковці: 5 шт |
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| NCR100W-10MX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 100uA; SOT223; SMD; 2us Mounting: SMD Max. off-state voltage: 850V Max. load current: 1.1A Load current: 0.8A Gate current: 100µA Max. forward impulse current: 11A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 кількість в упаковці: 5 шт |
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| NCR100W-12LX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Max. off-state voltage: 1kV Max. load current: 1.1A Load current: 0.8A Gate current: 50µA Max. forward impulse current: 11A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 кількість в упаковці: 5 шт |
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| NCR125W-125MX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.25kV; Ifmax: 1.25A; 800mA; Igt: 100uA; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Max. forward impulse current: 22A Gate current: 100µA Load current: 0.8A Max. load current: 1.25A Max. off-state voltage: 1.25kV Type of thyristor: thyristor кількість в упаковці: 5 шт |
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NXPLQSC106506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 48A кількість в упаковці: 1000 шт |
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NXPLQSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 48A Kind of package: tube кількість в упаковці: 240 шт |
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NXPLQSC30650W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 30A Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 50A кількість в упаковці: 240 шт |
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NXPSC046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 24A Kind of package: tube кількість в упаковці: 1000 шт |
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NXPSC04650B | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Kind of package: reel; tape Max. off-state voltage: 650V Max. load current: 8A Max. forward voltage: 1.5V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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NXPSC04650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 24A Kind of package: reel; tape кількість в упаковці: 800 шт |
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NXPSC04650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward impulse current: 24A Kind of package: reel; tape кількість в упаковці: 2500 шт |
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NXPSC04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V Kind of package: tube Max. off-state voltage: 650V Max. load current: 8A Max. forward voltage: 1.5V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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NXPSC04650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward impulse current: 24A Kind of package: tube кількість в упаковці: 1000 шт |
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NXPSC066506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 36A кількість в упаковці: 1000 шт |
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NXPSC06650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 36A кількість в упаковці: 800 шт |
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NXPSC06650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 36A кількість в упаковці: 2500 шт |
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NXPSC06650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 36A кількість в упаковці: 1000 шт |
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| NXPSC086506Q | WeEn Semiconductors |
NXPSC086506Q THT Schottky diodes |
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| NXPSC08650B6J | WeEn Semiconductors |
NXPSC08650B6J SMD Schottky diodes |
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| NXPSC08650D6J | WeEn Semiconductors |
NXPSC08650D6J SMD Schottky diodes |
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NXPSC08650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.5V Mounting: THT Case: TO220AC Max. load current: 16A Max. forward voltage: 1.5V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 48A Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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| NXPSC08650X6Q | WeEn Semiconductors |
NXPSC08650X6Q THT Schottky diodes |
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NXPSC106506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 50A кількість в упаковці: 1000 шт |
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NXPSC10650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 800 шт |
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NXPSC10650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 2500 шт |
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NXPSC10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A кількість в упаковці: 1000 шт |
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NXPSC126506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 72A Kind of package: tube кількість в упаковці: 1000 шт |
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NXPSC12650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 72A Kind of package: reel; tape кількість в упаковці: 800 шт |
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NXPSC166506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 96A Kind of package: tube кількість в упаковці: 1000 шт |
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NXPSC16650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 16A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 96A Kind of package: reel; tape кількість в упаковці: 800 шт |
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NXPSC206506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 100A Kind of package: tube кількість в упаковці: 1000 шт |
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NXPSC20650W-AQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.1V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube Application: automotive industry кількість в упаковці: 240 шт |
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NXPSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube кількість в упаковці: 240 шт |
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OT407,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Mounting: THT Gate current: 5/7mA Max. forward impulse current: 12.5A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Case: TO92 Type of thyristor: triac Max. load current: 1A Max. off-state voltage: 0.8kV кількість в упаковці: 10000 шт |
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OT412,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 1A; SOT223; 4Q; sensitive gate Technology: 4Q Case: SOT223 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Type of thyristor: triac Max. load current: 1A кількість в упаковці: 1 шт |
на замовлення 783 шт: термін постачання 14-21 дні (днів) |
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P4SOD58AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SOD кількість в упаковці: 5 шт |
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| P6SMAL36AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Mounting: SMD Max. off-state voltage: 36V Semiconductor structure: unidirectional Case: SMA flat Max. forward impulse current: 10.4A Leakage current: 1µA Kind of package: reel; tape Breakdown voltage: 40...44.2V Manufacturer series: P6SMAL Peak pulse power dissipation: 0.6kW кількість в упаковці: 5 шт |
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| P6SMAL75AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Mounting: SMD Max. off-state voltage: 75V Semiconductor structure: unidirectional Case: SMA flat Max. forward impulse current: 5A Leakage current: 1µA Kind of package: reel; tape Breakdown voltage: 83.3...92.1V Manufacturer series: P6SMAL Peak pulse power dissipation: 0.6kW кількість в упаковці: 5 шт |
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PHD13003C,126 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 700V Collector current: 1.5A Power dissipation: 2.1W Case: TO92 Current gain: 8...25 Mounting: THT Kind of package: Ammo Pack Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 10000 шт |
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PHD13005,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Kind of package: tube Current gain: 10...40 Collector current: 4A Type of transistor: NPN Power dissipation: 75W Polarisation: bipolar Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220AB Collector-emitter voltage: 400V кількість в упаковці: 5000 шт |
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PHE13003A,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2.1W Case: TO92 Current gain: 5...30 Mounting: THT Kind of package: bulk кількість в упаковці: 10000 шт |
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PHE13003C,126 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1.5A Power dissipation: 2.1W Case: TO92 Current gain: 5...25 Mounting: THT Kind of package: Ammo Pack кількість в упаковці: 10000 шт |
товар відсутній |
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PHE13003C,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1.5A Power dissipation: 2.1W Case: TO92 Current gain: 5...25 Mounting: THT Kind of package: bulk кількість в упаковці: 10000 шт |
товар відсутній |
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PHE13005,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Kind of package: tube Current gain: 10...40 Collector current: 4A Type of transistor: NPN Power dissipation: 75W Polarisation: bipolar Mounting: THT Case: TO220AB Collector-emitter voltage: 400V кількість в упаковці: 1 шт |
на замовлення 684 шт: термін постачання 14-21 дні (днів) |
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PHE13007,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB Kind of package: tube Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 8A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Mounting: THT Case: TO220AB кількість в упаковці: 1 шт |
на замовлення 952 шт: термін постачання 14-21 дні (днів) |
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PHE13009,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB Mounting: THT Kind of package: tube Power dissipation: 80W Polarisation: bipolar Case: TO220AB Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 12A Type of transistor: NPN кількість в упаковці: 1 шт |
на замовлення 952 шт: термін постачання 14-21 дні (днів) |
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PHE13009/DG,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm Mounting: THT Kind of package: tube Power dissipation: 80W Polarisation: bipolar Heatsink thickness: max. 1.3mm Case: TO220AB Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 12A Type of transistor: NPN кількість в упаковці: 1000 шт |
товар відсутній |
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SK8DJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1V; Ifsm: 165A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Max. forward impulse current: 165A Load current: 8A Max. forward voltage: 1V Type of diode: rectifying кількість в упаковці: 7500 шт |
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| SM8S33CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 124A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S кількість в упаковці: 1 шт |
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| SM8S43CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 95.1A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S кількість в упаковці: 1 шт |
товар відсутній |
| MAC97A8,412 | |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 3850 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.6 грн |
| 16+ | 18.16 грн |
| 100+ | 10.02 грн |
| 149+ | 6.94 грн |
| 409+ | 6.5 грн |
| MCR08BT1,115 |
|
Виробник: WeEn Semiconductors
MCR08BT1.115 SMD/THT thyristors
MCR08BT1.115 SMD/THT thyristors
на замовлення 660 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.18 грн |
| 100+ | 10.28 грн |
| 275+ | 9.75 грн |
| MUR320J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
кількість в упаковці: 12000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
кількість в упаковці: 12000 шт
товар відсутній
| MUR440J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
кількість в упаковці: 12000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
кількість в упаковці: 12000 шт
товар відсутній
| MUR560J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.48 грн |
| 25+ | 14.78 грн |
| 91+ | 11.42 грн |
| 248+ | 10.81 грн |
| 3000+ | 10.54 грн |
| MUR860J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: SMC
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: SMC
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
кількість в упаковці: 3000 шт
товар відсутній
| MURS160BJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
кількість в упаковці: 3000 шт
товар відсутній
| MURS360BJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5999 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.48 грн |
| 25+ | 11.77 грн |
| 100+ | 10.02 грн |
| 113+ | 9.14 грн |
| 310+ | 8.61 грн |
| 3000+ | 8.43 грн |
| N0118GA,412 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 7uA; TO92; THT; bulk
Load current: 0.51A
Gate current: 7µA
Max. forward impulse current: 9A
Kind of package: bulk
Case: TO92
Mounting: THT
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 7uA; TO92; THT; bulk
Load current: 0.51A
Gate current: 7µA
Max. forward impulse current: 9A
Kind of package: bulk
Case: TO92
Mounting: THT
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
кількість в упаковці: 5 шт
товар відсутній
| NCR100Q-6MX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT89
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Max. forward impulse current: 9A
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT89
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Max. forward impulse current: 9A
кількість в упаковці: 5 шт
товар відсутній
| NCR100W-10LX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A
Mounting: SMD
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A
Mounting: SMD
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
кількість в упаковці: 5 шт
товар відсутній
| NCR100W-10MX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 100uA; SOT223; SMD; 2us
Mounting: SMD
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 100uA; SOT223; SMD; 2us
Mounting: SMD
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
кількість в упаковці: 5 шт
товар відсутній
| NCR100W-12LX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
кількість в упаковці: 5 шт
товар відсутній
| NCR125W-125MX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.25kV; Ifmax: 1.25A; 800mA; Igt: 100uA; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Max. forward impulse current: 22A
Gate current: 100µA
Load current: 0.8A
Max. load current: 1.25A
Max. off-state voltage: 1.25kV
Type of thyristor: thyristor
кількість в упаковці: 5 шт
Category: SMD/THT thyristors
Description: Thyristor; 1.25kV; Ifmax: 1.25A; 800mA; Igt: 100uA; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Max. forward impulse current: 22A
Gate current: 100µA
Load current: 0.8A
Max. load current: 1.25A
Max. off-state voltage: 1.25kV
Type of thyristor: thyristor
кількість в упаковці: 5 шт
товар відсутній
| NXPLQSC106506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 48A
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 48A
кількість в упаковці: 1000 шт
товар відсутній
| NXPLQSC20650W6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
кількість в упаковці: 240 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
кількість в упаковці: 240 шт
товар відсутній
| NXPLQSC30650W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 30A
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
кількість в упаковці: 240 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 30A
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
кількість в упаковці: 240 шт
товар відсутній
| NXPSC046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC04650B |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.05 грн |
| 5+ | 75.73 грн |
| 18+ | 57.99 грн |
| 49+ | 54.47 грн |
| NXPSC04650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
кількість в упаковці: 800 шт
товар відсутній
| NXPSC04650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
кількість в упаковці: 2500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
кількість в упаковці: 2500 шт
товар відсутній
| NXPSC04650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Kind of package: tube
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Kind of package: tube
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.54 грн |
| 5+ | 106.75 грн |
| NXPSC04650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC066506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC06650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 800 шт
товар відсутній
| NXPSC06650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 2500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 2500 шт
товар відсутній
| NXPSC06650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 36A
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 36A
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC08650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.99 грн |
| NXPSC106506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC10650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 800 шт
товар відсутній
| NXPSC10650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 2500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 2500 шт
товар відсутній
| NXPSC10650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC126506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC12650B6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
кількість в упаковці: 800 шт
товар відсутній
| NXPSC166506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 96A
Kind of package: tube
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 96A
Kind of package: tube
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC16650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 16A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 96A
Kind of package: reel; tape
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 16A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 96A
Kind of package: reel; tape
кількість в упаковці: 800 шт
товар відсутній
| NXPSC206506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
кількість в упаковці: 1000 шт
товар відсутній
| NXPSC20650W-AQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
кількість в упаковці: 240 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
кількість в упаковці: 240 шт
товар відсутній
| NXPSC20650W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
кількість в упаковці: 240 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
кількість в упаковці: 240 шт
товар відсутній
| OT407,116 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Mounting: THT
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Case: TO92
Type of thyristor: triac
Max. load current: 1A
Max. off-state voltage: 0.8kV
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Mounting: THT
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Case: TO92
Type of thyristor: triac
Max. load current: 1A
Max. off-state voltage: 0.8kV
кількість в упаковці: 10000 шт
товар відсутній
| OT412,115 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Technology: 4Q
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Max. load current: 1A
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Technology: 4Q
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Max. load current: 1A
кількість в упаковці: 1 шт
на замовлення 783 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.48 грн |
| 25+ | 17.06 грн |
| 76+ | 13.53 грн |
| 209+ | 12.83 грн |
| 1000+ | 12.3 грн |
| P4SOD58AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
кількість в упаковці: 5 шт
товар відсутній
| P6SMAL36AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
кількість в упаковці: 5 шт
товар відсутній
| P6SMAL75AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
кількість в упаковці: 5 шт
товар відсутній
| PHD13003C,126 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 700V
Collector current: 1.5A
Power dissipation: 2.1W
Case: TO92
Current gain: 8...25
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 10000 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 700V
Collector current: 1.5A
Power dissipation: 2.1W
Case: TO92
Current gain: 8...25
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 10000 шт
товар відсутній
| PHD13005,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Kind of package: tube
Current gain: 10...40
Collector current: 4A
Type of transistor: NPN
Power dissipation: 75W
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
кількість в упаковці: 5000 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Kind of package: tube
Current gain: 10...40
Collector current: 4A
Type of transistor: NPN
Power dissipation: 75W
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
кількість в упаковці: 5000 шт
товар відсутній
| PHE13003A,412 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...30
Mounting: THT
Kind of package: bulk
кількість в упаковці: 10000 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...30
Mounting: THT
Kind of package: bulk
кількість в упаковці: 10000 шт
товар відсутній
| PHE13003C,126 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...25
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 10000 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...25
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 10000 шт
товар відсутній
| PHE13003C,412 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...25
Mounting: THT
Kind of package: bulk
кількість в упаковці: 10000 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...25
Mounting: THT
Kind of package: bulk
кількість в упаковці: 10000 шт
товар відсутній
| PHE13005,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Kind of package: tube
Current gain: 10...40
Collector current: 4A
Type of transistor: NPN
Power dissipation: 75W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Kind of package: tube
Current gain: 10...40
Collector current: 4A
Type of transistor: NPN
Power dissipation: 75W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
кількість в упаковці: 1 шт
на замовлення 684 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 32.17 грн |
| 11+ | 26.09 грн |
| 50+ | 20.82 грн |
| 61+ | 16.87 грн |
| 166+ | 15.99 грн |
| 500+ | 15.55 грн |
| PHE13007,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
кількість в упаковці: 1 шт
на замовлення 952 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.45 грн |
| 7+ | 39.78 грн |
| 25+ | 35.06 грн |
| 36+ | 28.73 грн |
| 99+ | 27.15 грн |
| PHE13009,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
кількість в упаковці: 1 шт
на замовлення 952 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.45 грн |
| 10+ | 55.84 грн |
| 33+ | 31.45 грн |
| 90+ | 29.7 грн |
| 1000+ | 28.55 грн |
| PHE13009/DG,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm
Mounting: THT
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Heatsink thickness: max. 1.3mm
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
кількість в упаковці: 1000 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm
Mounting: THT
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Heatsink thickness: max. 1.3mm
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
кількість в упаковці: 1000 шт
товар відсутній
| SK8DJ |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1V; Ifsm: 165A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Max. forward impulse current: 165A
Load current: 8A
Max. forward voltage: 1V
Type of diode: rectifying
кількість в упаковці: 7500 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1V; Ifsm: 165A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Max. forward impulse current: 165A
Load current: 8A
Max. forward voltage: 1V
Type of diode: rectifying
кількість в упаковці: 7500 шт
товар відсутній
| SM8S33CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
кількість в упаковці: 1 шт
товар відсутній
| SM8S43CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
кількість в упаковці: 1 шт
товар відсутній