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WNSC2D10650TJ WeEn Semiconductors
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Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 190.84 грн |
10+ | 154.04 грн |
100+ | 124.63 грн |
500+ | 103.96 грн |
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Технічний опис WNSC2D10650TJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 310pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції WNSC2D10650TJ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
WNSC2D10650TJ | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape кількість в упаковці: 3000 шт |
товар відсутній |
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![]() |
WNSC2D10650TJ | Виробник : WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товар відсутній |
|
![]() |
WNSC2D10650TJ | Виробник : WeEn Semiconductors |
![]() |
товар відсутній |
|
WNSC2D10650TJ | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 50A Kind of package: reel; tape |
товар відсутній |