Технічний опис WNSC5D04650D6J Ween
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Case: DPAK, Max. forward voltage: 2.2V, Max. load current: 8A, Max. forward impulse current: 26A, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції WNSC5D04650D6J
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WNSC5D04650D6J | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 26A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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WNSC5D04650D6J | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 2.2V Max. load current: 8A Max. forward impulse current: 26A Kind of package: reel; tape |
товар відсутній |