Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6219) > Сторінка 100 з 104
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| WND35P08XQ | WeEn Semiconductors |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD113; TO220FP-2 Max. forward voltage: 1.35V |
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| WND35P12BJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 35A; D2PAK,SOT404; Ufmax: 1.35V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 35A Semiconductor structure: single diode Case: D2PAK; SOT404 Max. forward voltage: 1.35V Max. forward impulse current: 0.4kA Kind of package: reel; tape |
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WNSC2D201200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 72A Load current: 10A x2 |
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WNSC2D201200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 125A Kind of package: tube |
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BUJD203A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB Collector-emitter voltage: 425V Current gain: 11...22 Collector current: 4A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220AB |
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| BUJD203AD,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 425V; 4A; 80W; DPAK Collector-emitter voltage: 425V Current gain: 11...22 Collector current: 4A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Mounting: SMD Case: DPAK |
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BUJD203AX,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 425V; 4A; 26W; TO220FP Collector-emitter voltage: 425V Current gain: 11...22 Collector current: 4A Type of transistor: NPN Power dissipation: 26W Polarisation: bipolar Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220FP |
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BYV32G-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A Max. load current: 20A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: I2PAK Max. forward voltage: 0.85V Mounting: THT Load current: 10A x2 |
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BYC10-600CT,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 40A Case: SOT78; TO220AB Max. forward voltage: 1.4V Max. load current: 10A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 19ns |
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TYN16X-600CT,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 15mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 180A Turn-on time: 2µs |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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BTA225-600BT,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA225B-600B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
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| N0118GA,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 7uA; TO92; THT; bulk Load current: 0.51A Gate current: 7µA Max. forward impulse current: 9A Kind of package: bulk Case: TO92 Mounting: THT Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A |
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| NCR125W-125MX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.25kV; Ifmax: 1.25A; 800mA; Igt: 100uA; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Max. forward impulse current: 22A Gate current: 100µA Load current: 0.8A Max. load current: 1.25A Max. off-state voltage: 1.25kV Type of thyristor: thyristor |
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| SM8S43CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 95.1A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
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BT258-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 0.2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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BYC8-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 100A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 46ns |
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BYC8B-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 60A Case: D2PAK; SOT404 Max. forward voltage: 2.3V Reverse recovery time: 40ns |
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BYC8B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 100A Case: D2PAK; SOT404 Max. forward voltage: 1.9V Reverse recovery time: 18ns |
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BYC8D-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 60A Case: SOD59; TO220AC Max. forward voltage: 1.85V Reverse recovery time: 40ns |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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BYV10ED-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Kind of package: reel; tape Max. forward impulse current: 70A |
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SMBJ20AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.41...24.28V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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| SMBJ78AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 87.4...95.1V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
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| SMCJ58AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 65...70.6V Max. forward impulse current: 16.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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| SMDJ30AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ33AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.98...40.3V Max. forward impulse current: 56.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SM8S33CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 124A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
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| SMBJ40CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.7...48.8V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
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| SMCJ15CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 16.86÷18.33V; 61.5A; bidirectional; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.86...18.33V Max. forward impulse current: 61.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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| SMCJ36CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40.3...43.9V Max. forward impulse current: 25.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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| SMCJ40CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.7...48.8V Max. forward impulse current: 23.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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| SMDJ28CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.34...34.16V Max. forward impulse current: 66.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ30CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ33CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.98...40.3V Max. forward impulse current: 56.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ43CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 48.2÷52.4V; 43.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 43V Breakdown voltage: 48.2...52.4V Max. forward impulse current: 43.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ48CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.7...58.5V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ51CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 51V Breakdown voltage: 57.1...62.3V Max. forward impulse current: 36.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ58CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.9...70.7V Max. forward impulse current: 32.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ64CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 64V Breakdown voltage: 71.6...78V Max. forward impulse current: 29.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| ESDHD03UFX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1 Mounting: SMD Case: DFN1006-2 Manufacturer series: HD Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. forward impulse current: 24A Breakdown voltage: 4...8V Leakage current: 1µA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V |
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| ESDHD05UFX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape Type of diode: TVS Peak pulse power dissipation: 320W Max. off-state voltage: 5V Breakdown voltage: 6...9.5V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Manufacturer series: HD |
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| ESDUD05BFX | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 88W Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Manufacturer series: UD |
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| P6SMAL36AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Mounting: SMD Max. off-state voltage: 36V Semiconductor structure: unidirectional Case: SMA flat Max. forward impulse current: 10.4A Leakage current: 1µA Kind of package: reel; tape Breakdown voltage: 40...44.2V Manufacturer series: P6SMAL Peak pulse power dissipation: 0.6kW |
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| P6SMAL75AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Mounting: SMD Max. off-state voltage: 75V Semiconductor structure: unidirectional Case: SMA flat Max. forward impulse current: 5A Leakage current: 1µA Kind of package: reel; tape Breakdown voltage: 83.3...92.1V Manufacturer series: P6SMAL Peak pulse power dissipation: 0.6kW |
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BYC20-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 274A Case: SOD59; TO220AC Max. forward voltage: 2.34V Reverse recovery time: 40ns |
на замовлення 830 шт: термін постачання 21-30 дні (днів) |
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BYC20D-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 275A Case: SOD59; TO220AC Max. forward voltage: 1.97V Reverse recovery time: 20ns |
на замовлення 825 шт: термін постачання 21-30 дні (днів) |
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BYC20X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 274A Case: SOD113; TO220FP-2 Max. forward voltage: 2.05V Reverse recovery time: 40ns |
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BYC20X-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Max. load current: 40A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: SOD113; TO220FP-2 Max. forward voltage: 1.6V Reverse recovery time: 35ns |
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BYQ28ED-200,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V Mounting: SMD Case: DPAK Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 200V Max. load current: 10A Max. forward voltage: 1.25V Load current: 5A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 55A |
на замовлення 2436 шт: термін постачання 21-30 дні (днів) |
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WNSC021200Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Max. load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 26A Max. forward voltage: 1.4V |
товар відсутній |
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BT158W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 70mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 1.1kA Turn-on time: 2µs |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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BYQ28E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. off-state voltage: 200V Max. load current: 10A Max. forward voltage: 0.8V Load current: 5A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 55A |
на замовлення 154 шт: термін постачання 21-30 дні (днів) |
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BT258S-800LT,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Case: DPAK Mounting: SMD Kind of package: reel; tape Turn-on time: 2µs Max. off-state voltage: 0.8kV Gate current: 50µA Type of thyristor: thyristor Max. forward impulse current: 75A Load current: 5A Max. load current: 8A |
на замовлення 2403 шт: термін постачання 21-30 дні (днів) |
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BUJ105A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB Mounting: THT Kind of package: tube Power dissipation: 80W Polarisation: bipolar Case: TO220AB Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN |
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| BUJ105AB,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 125W Polarisation: bipolar Case: D2PAK Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN |
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| BUJ105AD,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 80W Polarisation: bipolar Case: DPAK Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN |
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BYC10-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOD59; TO220AC Max. forward voltage: 2V Max. load current: 20A Reverse recovery time: 18ns |
товар відсутній |
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BYC100W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 100A Reverse recovery time: 115ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward voltage: 2.2V Case: TO247-2 Kind of package: tube Max. forward impulse current: 0.9kA |
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BYC10D-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 18ns |
товар відсутній |
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BYC10DX-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 18ns |
на замовлення 626 шт: термін постачання 21-30 дні (днів) |
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| WND35P08XQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
товар відсутній
| WND35P12BJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 35A; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: single diode
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 35A; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: single diode
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
товар відсутній
| WNSC2D201200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 72A
Load current: 10A x2
товар відсутній
| WNSC2D201200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.1V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Kind of package: tube
товар відсутній
| BUJD203A,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220AB
товар відсутній
| BUJD203AD,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; DPAK
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Case: DPAK
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; DPAK
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Case: DPAK
товар відсутній
| BUJD203AX,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 26W; TO220FP
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 26W; TO220FP
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
товар відсутній
| BYV32G-200,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: I2PAK
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: I2PAK
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
товар відсутній
| BYC10-600CT,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 19ns
товар відсутній
| TYN16X-600CT,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.04 грн |
| 14+ | 27.82 грн |
| 25+ | 24.31 грн |
| 40+ | 21.74 грн |
| 109+ | 20.57 грн |
| BTA225-600BT,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA225B-600B,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| N0118GA,412 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 7uA; TO92; THT; bulk
Load current: 0.51A
Gate current: 7µA
Max. forward impulse current: 9A
Kind of package: bulk
Case: TO92
Mounting: THT
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 7uA; TO92; THT; bulk
Load current: 0.51A
Gate current: 7µA
Max. forward impulse current: 9A
Kind of package: bulk
Case: TO92
Mounting: THT
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
товар відсутній
| NCR125W-125MX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.25kV; Ifmax: 1.25A; 800mA; Igt: 100uA; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Max. forward impulse current: 22A
Gate current: 100µA
Load current: 0.8A
Max. load current: 1.25A
Max. off-state voltage: 1.25kV
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.25kV; Ifmax: 1.25A; 800mA; Igt: 100uA; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Max. forward impulse current: 22A
Gate current: 100µA
Load current: 0.8A
Max. load current: 1.25A
Max. off-state voltage: 1.25kV
Type of thyristor: thyristor
товар відсутній
| SM8S43CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
товар відсутній
| BT258-500R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.04 грн |
| 10+ | 36.61 грн |
| 25+ | 25.48 грн |
| 50+ | 17.42 грн |
| 136+ | 16.47 грн |
| BYC8-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
товар відсутній
| BYC8B-600,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK; SOT404
Max. forward voltage: 2.3V
Reverse recovery time: 40ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK; SOT404
Max. forward voltage: 2.3V
Reverse recovery time: 40ns
товар відсутній
| BYC8B-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
товар відсутній
| BYC8D-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.93 грн |
| 10+ | 48.69 грн |
| 25+ | 36.9 грн |
| 30+ | 28.55 грн |
| 82+ | 27.02 грн |
| BYV10ED-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 70A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 70A
товар відсутній
| SMBJ20AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.41 грн |
| 65+ | 5.93 грн |
| 100+ | 5.2 грн |
| 175+ | 4.98 грн |
| 475+ | 4.69 грн |
| SMBJ78AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товар відсутній
| SMCJ58AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товар відсутній
| SMDJ30AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ33AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SM8S33CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
товар відсутній
| SMBJ40CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товар відсутній
| SMCJ15CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 16.86÷18.33V; 61.5A; bidirectional; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.86...18.33V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 16.86÷18.33V; 61.5A; bidirectional; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.86...18.33V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товар відсутній
| SMCJ36CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товар відсутній
| SMCJ40CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товар відсутній
| SMDJ28CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.34...34.16V
Max. forward impulse current: 66.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.34...34.16V
Max. forward impulse current: 66.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ30CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ33CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ43CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 48.2÷52.4V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 48.2...52.4V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 48.2÷52.4V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 48.2...52.4V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ48CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ51CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ58CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ64CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| ESDHD03UFX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Case: DFN1006-2
Manufacturer series: HD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 24A
Breakdown voltage: 4...8V
Leakage current: 1µA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Case: DFN1006-2
Manufacturer series: HD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 24A
Breakdown voltage: 4...8V
Leakage current: 1µA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
товар відсутній
| ESDHD05UFX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 320W
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: HD
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 320W
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: HD
товар відсутній
| ESDUD05BFX |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 88W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: UD
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 88W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: UD
товар відсутній
| P6SMAL36AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
товар відсутній
| P6SMAL75AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Manufacturer series: P6SMAL
Peak pulse power dissipation: 0.6kW
товар відсутній
| BYC20-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 274A
Case: SOD59; TO220AC
Max. forward voltage: 2.34V
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 274A
Case: SOD59; TO220AC
Max. forward voltage: 2.34V
Reverse recovery time: 40ns
на замовлення 830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.5 грн |
| 8+ | 51.4 грн |
| 20+ | 43.2 грн |
| 54+ | 40.78 грн |
| 500+ | 39.24 грн |
| BYC20D-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 275A
Case: SOD59; TO220AC
Max. forward voltage: 1.97V
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 275A
Case: SOD59; TO220AC
Max. forward voltage: 1.97V
Reverse recovery time: 20ns
на замовлення 825 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.92 грн |
| 8+ | 50.08 грн |
| 22+ | 39.39 грн |
| 60+ | 37.19 грн |
| 250+ | 36.83 грн |
| BYC20X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 274A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.05V
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 274A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.05V
Reverse recovery time: 40ns
товар відсутній
| BYC20X-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.6V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.6V
Reverse recovery time: 35ns
товар відсутній
| BYQ28ED-200,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
на замовлення 2436 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.77 грн |
| 9+ | 40.71 грн |
| 25+ | 28.55 грн |
| 41+ | 21.32 грн |
| 111+ | 20.16 грн |
| WNSC021200Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 26A
Max. forward voltage: 1.4V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 26A
Max. forward voltage: 1.4V
товар відсутній
| BT158W-1200TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 318.54 грн |
| 4+ | 248.93 грн |
| 10+ | 235.75 грн |
| 25+ | 235.02 грн |
| BYQ28E-200,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 0.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 0.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
на замовлення 154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.04 грн |
| 15+ | 25.04 грн |
| 25+ | 22.26 грн |
| 46+ | 18.82 грн |
| 124+ | 17.79 грн |
| BT258S-800LT,118 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Max. off-state voltage: 0.8kV
Gate current: 50µA
Type of thyristor: thyristor
Max. forward impulse current: 75A
Load current: 5A
Max. load current: 8A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Max. off-state voltage: 0.8kV
Gate current: 50µA
Type of thyristor: thyristor
Max. forward impulse current: 75A
Load current: 5A
Max. load current: 8A
на замовлення 2403 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.62 грн |
| 10+ | 42.39 грн |
| 47+ | 18.52 грн |
| 128+ | 17.5 грн |
| BUJ105A,127 |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
товар відсутній
| BUJ105AB,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 125W
Polarisation: bipolar
Case: D2PAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 125W
Polarisation: bipolar
Case: D2PAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
товар відсутній
| BUJ105AD,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 80W
Polarisation: bipolar
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 80W
Polarisation: bipolar
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
товар відсутній
| BYC10-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 20A
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 20A
Reverse recovery time: 18ns
товар відсутній
| BYC100W-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Reverse recovery time: 115ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward voltage: 2.2V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.9kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Reverse recovery time: 115ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward voltage: 2.2V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.9kA
товар відсутній
| BYC10D-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
товар відсутній
| BYC10DX-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 626 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.04 грн |
| 11+ | 35.44 грн |
| 25+ | 31.34 грн |
| 29+ | 29.43 грн |
| 80+ | 27.82 грн |
| 500+ | 26.72 грн |