Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6294) > Сторінка 102 з 105
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
WNS20S100CXQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.95V |
товар відсутній |
|||||||||||||
 |
OT407,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Mounting: THT Gate current: 5/7mA Max. forward impulse current: 12.5A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Case: TO92 Type of thyristor: triac Max. load current: 1A Max. off-state voltage: 0.8kV |
товар відсутній |
|||||||||||||
| BTA45-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Max. forward impulse current: 495A Kind of package: tube Features of semiconductor devices: high temperature Technology: 4Q Type of thyristor: triac Mounting: THT Case: SOT1292; TO3P |
товар відсутній |
||||||||||||||
| TYN40Y-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 40A Load current: 25A Gate current: 15mA Case: SOT78D Mounting: THT Kind of package: tube Max. forward impulse current: 495A Turn-on time: 2µs |
товар відсутній |
||||||||||||||
|
|
BT236X-800G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Gate current: 50/100mA Max. forward impulse current: 65A |
товар відсутній |
|||||||||||||
| ACTT16-800CTNQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 16A Gate current: 35mA Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
||||||||||||||
| ACTT16B-800CTNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; D2PAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 16A Gate current: 35mA Case: D2PAK Mounting: SMD Kind of package: reel; tape |
товар відсутній |
||||||||||||||
 |
EC103D1,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape Mounting: THT Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Max. forward impulse current: 8A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: TO92 Max. off-state voltage: 0.4kV |
товар відсутній |
|||||||||||||
 |
EC103D1,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A Case: TO92 Mounting: THT Kind of package: bulk Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Max. forward impulse current: 8A Turn-on time: 2µs Type of thyristor: thyristor |
на замовлення 1622 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| EC103D1WF | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A Mounting: SMD Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Max. forward impulse current: 9A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 Max. off-state voltage: 0.4kV |
товар відсутній |
||||||||||||||
 |
EC103D1WX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Max. forward impulse current: 8A Turn-on time: 2µs Type of thyristor: thyristor |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BUJ106A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 80W Case: TO220AB Current gain: 14...33 Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
 |
WNSC2D301200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 15A x2 Max. load current: 30A Max. forward impulse current: 102A |
товар відсутній |
|||||||||||||
| ACTT12-800CTQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35mA Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
||||||||||||||
| BT234-800D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q Technology: 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: logic level; sensitive gate Gate current: 10mA Type of thyristor: triac Max. forward impulse current: 35A Max. load current: 4A |
товар відсутній |
||||||||||||||
 |
NXPSC126506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 72A Kind of package: tube |
товар відсутній |
|||||||||||||
 |
NXPSC12650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 72A Kind of package: reel; tape |
товар відсутній |
|||||||||||||
 |
BT258U-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товар відсутній |
|||||||||||||
|
|
BT258X-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товар відсутній |
|||||||||||||
|
|
BT258X-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товар відсутній |
|||||||||||||
|
|
BYT28-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 55A Max. load current: 10A Max. off-state voltage: 500V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 1.4V Mounting: THT Load current: 5A x2 |
товар відсутній |
|||||||||||||
 |
BYV30JT-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF Mounting: THT Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Max. off-state voltage: 0.6kV Max. forward voltage: 0.96V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 170A Kind of package: tube Type of diode: rectifying |
товар відсутній |
|||||||||||||
|
|
BYV415J-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.1V |
товар відсутній |
|||||||||||||
|
|
BYV430J-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 1.25V |
товар відсутній |
|||||||||||||
|
|
BYV10-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD59; TO220AC Kind of package: tube Max. forward impulse current: 80A |
товар відсутній |
|||||||||||||
 |
BYV430K-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P Mounting: THT Case: SOT1259; TO3P Kind of package: tube Max. forward impulse current: 300A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 300V Max. load current: 60A Max. forward voltage: 0.85V Load current: 30A x2 Semiconductor structure: common cathode; double |
товар відсутній |
|||||||||||||
|
|
TOPT12-800C0,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Protection: anti-overload OPP; overheating OTP Features of semiconductor devices: high temperature Technology: Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35mA Max. forward impulse current: 95A |
товар відсутній |
|||||||||||||
 |
ACTT4S-800E,118 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD Max. load current: 4A Max. off-state voltage: 0.8kV Kind of package: reel; tape Case: DPAK Mounting: SMD Type of thyristor: AC switch Gate current: 10mA |
на замовлення 2346 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BUJ303AX,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 500V; 5A; 32W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 5A Power dissipation: 32W Case: TO220FP Current gain: 14...35 Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
|
|
BYV415K-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1.1V Case: SOT1259; TO3P Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 140A Load current: 15A x2 Max. off-state voltage: 0.6kV |
товар відсутній |
|||||||||||||
|
|
BTA308X-800B0Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 60A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
|
|
BTA308Y-800C0TQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35mA Max. forward impulse current: 60A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 465 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
WNSC201200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 10A x2 Max. forward voltage: 1.4V Max. load current: 20A Max. forward impulse current: 110A |
товар відсутній |
|||||||||||||
|
|
WNSC101200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.6V Max. load current: 10A Max. forward impulse current: 65A Kind of package: tube |
товар відсутній |
|||||||||||||
| WNSC6D01650MBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: SMB Kind of package: reel; tape Max. forward impulse current: 18A |
товар відсутній |
||||||||||||||
| ACTT10-800CQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube Mounting: THT Kind of package: tube Gate current: 35mA Max. load current: 10A Max. off-state voltage: 0.8kV Case: TO220AB Type of thyristor: AC switch |
товар відсутній |
||||||||||||||
|
|
TYN50W-1600TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 79A Load current: 50A Gate current: 80mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
товар відсутній |
|||||||||||||
|
|
BYV34-400,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: SOT78; TO220AB Max. forward voltage: 0.87V Max. load current: 20A Heatsink thickness: 1.25...1.4mm |
на замовлення 769 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BYV25F-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 66A Case: SOD59; TO220AC Max. forward voltage: 1.7V Reverse recovery time: 35ns |
товар відсутній |
|||||||||||||
 |
BYV25G-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 66A Case: I2PAK Max. forward voltage: 1.11V Reverse recovery time: 60ns |
товар відсутній |
|||||||||||||
 |
BYV25X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 66A Case: SOD113; TO220FP-2 Max. forward voltage: 1.11V Reverse recovery time: 60ns |
товар відсутній |
|||||||||||||
|
|
BYV34G-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: I2PAK Max. forward voltage: 0.92V Max. load current: 20A |
товар відсутній |
|||||||||||||
|
|
BYV34X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.16V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 132A Case: SOD113; TO220FP-2 Max. forward voltage: 1.16V Max. load current: 20A Reverse recovery time: 60ns |
товар відсутній |
|||||||||||||
|
|
BYV74W-400,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 185A Case: TO247-3 Max. forward voltage: 1.36V Max. load current: 30A Reverse recovery time: 60ns |
на замовлення 629 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BYV79E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 160A Case: SOD59; TO220AC Max. forward voltage: 0.83V Heatsink thickness: max. 1.3mm Reverse recovery time: 30ns |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BYV410X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOD113; TO220FP-2 Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 20ns |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
NXPLQSC30650W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 30A Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 50A |
товар відсутній |
|||||||||||||
|
|
BTA204-800E.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
|
|
BYV29-500.127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
товар відсутній |
|||||||||||||
|
|
BT138-800.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
|
|
BT137-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
|
|
BT137-800.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
| WNSC06650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DFN8x8N Max. forward impulse current: 36A Kind of package: reel; tape |
товар відсутній |
||||||||||||||
|
|
NXPSC066506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 36A |
товар відсутній |
|||||||||||||
|
|
NXPSC06650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 36A |
товар відсутній |
|||||||||||||
 |
NXPSC06650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 36A |
товар відсутній |
|||||||||||||
|
|
NXPSC06650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 36A |
товар відсутній |
|||||||||||||
|
|
WNSC2D06650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 6A Max. forward impulse current: 36A |
товар відсутній |
|||||||||||||
| WNSC2D06650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 6A Max. forward impulse current: 36A |
товар відсутній |
||||||||||||||
|
|
WNSC2D06650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 6A Max. forward impulse current: 30A |
товар відсутній |
| WNS20S100CXQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
товар відсутній
| OT407,116 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Mounting: THT
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Case: TO92
Type of thyristor: triac
Max. load current: 1A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Mounting: THT
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Case: TO92
Type of thyristor: triac
Max. load current: 1A
Max. off-state voltage: 0.8kV
товар відсутній
| BTA45-800BQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
товар відсутній
| TYN40Y-800TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
товар відсутній
| BT236X-800G,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 50/100mA
Max. forward impulse current: 65A
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 50/100mA
Max. forward impulse current: 65A
товар відсутній
| ACTT16-800CTNQ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| ACTT16B-800CTNJ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| EC103D1,116 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Mounting: THT
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: TO92
Max. off-state voltage: 0.4kV
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Mounting: THT
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: TO92
Max. off-state voltage: 0.4kV
товар відсутній
| EC103D1,412 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Type of thyristor: thyristor
на замовлення 1622 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.49 грн |
| 58+ | 6.52 грн |
| 100+ | 5.84 грн |
| 176+ | 5.02 грн |
| 484+ | 4.72 грн |
| 1000+ | 4.65 грн |
| EC103D1WF |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A
Mounting: SMD
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 9A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 0.4kV
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A
Mounting: SMD
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 9A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Max. off-state voltage: 0.4kV
товар відсутній
| EC103D1WX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Type of thyristor: thyristor
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 26.63 грн |
| 21+ | 18.06 грн |
| 100+ | 10.42 грн |
| 124+ | 7.12 грн |
| BUJ106A,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
товар відсутній
| WNSC2D301200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 102A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 102A
товар відсутній
| ACTT12-800CTQ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| BT234-800D,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
товар відсутній
| NXPSC126506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
товар відсутній
| NXPSC12650B6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
товар відсутній
| BT258U-600R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товар відсутній
| BT258X-500R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товар відсутній
| BT258X-600R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товар відсутній
| BYT28-500,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 500V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 500V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
товар відсутній
| BYV30JT-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF
Mounting: THT
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.96V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 170A
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF
Mounting: THT
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.96V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 170A
Kind of package: tube
Type of diode: rectifying
товар відсутній
| BYV415J-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
товар відсутній
| BYV430J-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.25V
товар відсутній
| BYV10-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 80A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 80A
товар відсутній
| BYV430K-300PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Max. forward impulse current: 300A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 300V
Max. load current: 60A
Max. forward voltage: 0.85V
Load current: 30A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Max. forward impulse current: 300A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 300V
Max. load current: 60A
Max. forward voltage: 0.85V
Load current: 30A x2
Semiconductor structure: common cathode; double
товар відсутній
| TOPT12-800C0,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
Features of semiconductor devices: high temperature
Technology: Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Max. forward impulse current: 95A
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
Features of semiconductor devices: high temperature
Technology: Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Max. forward impulse current: 95A
товар відсутній
| ACTT4S-800E,118 |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
на замовлення 2346 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 48.7 грн |
| 10+ | 42.71 грн |
| 25+ | 32.07 грн |
| 44+ | 20.31 грн |
| 119+ | 19.18 грн |
| BUJ303AX,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 32W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 5A
Power dissipation: 32W
Case: TO220FP
Current gain: 14...35
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 32W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 5A
Power dissipation: 32W
Case: TO220FP
Current gain: 14...35
Mounting: THT
Kind of package: tube
товар відсутній
| BYV415K-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: SOT1259; TO3P
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Load current: 15A x2
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: SOT1259; TO3P
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Load current: 15A x2
Max. off-state voltage: 0.6kV
товар відсутній
| BTA308X-800B0Q |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA308Y-800C0TQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.1 грн |
| 13+ | 29.82 грн |
| 25+ | 25.63 грн |
| 39+ | 22.55 грн |
| 107+ | 21.28 грн |
| WNSC201200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A x2
Max. forward voltage: 1.4V
Max. load current: 20A
Max. forward impulse current: 110A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A x2
Max. forward voltage: 1.4V
Max. load current: 20A
Max. forward impulse current: 110A
товар відсутній
| WNSC101200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.6V
Max. load current: 10A
Max. forward impulse current: 65A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.6V
Max. load current: 10A
Max. forward impulse current: 65A
Kind of package: tube
товар відсутній
| WNSC6D01650MBJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
товар відсутній
| ACTT10-800CQ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Gate current: 35mA
Max. load current: 10A
Max. off-state voltage: 0.8kV
Case: TO220AB
Type of thyristor: AC switch
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Gate current: 35mA
Max. load current: 10A
Max. off-state voltage: 0.8kV
Case: TO220AB
Type of thyristor: AC switch
товар відсутній
| TYN50W-1600TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
товар відсутній
| BYV34-400,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
на замовлення 769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.47 грн |
| 10+ | 63.69 грн |
| 20+ | 43.46 грн |
| 55+ | 41.21 грн |
| BYV25F-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
товар відсутній
| BYV25G-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: I2PAK
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: I2PAK
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
товар відсутній
| BYV25X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
товар відсутній
| BYV34G-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: I2PAK
Max. forward voltage: 0.92V
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; I2PAK
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: I2PAK
Max. forward voltage: 0.92V
Max. load current: 20A
товар відсутній
| BYV34X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.16V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.16V
Max. load current: 20A
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.16V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.16V
Max. load current: 20A
Reverse recovery time: 60ns
товар відсутній
| BYV74W-400,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-3
Max. forward voltage: 1.36V
Max. load current: 30A
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-3
Max. forward voltage: 1.36V
Max. load current: 30A
Reverse recovery time: 60ns
на замовлення 629 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.68 грн |
| 16+ | 57.7 грн |
| 42+ | 54.7 грн |
| BYV79E-200,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
на замовлення 840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.82 грн |
| 10+ | 57.32 грн |
| 29+ | 31.02 грн |
| 78+ | 29.3 грн |
| BYV410X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.69 грн |
| 6+ | 66.69 грн |
| 18+ | 51.7 грн |
| 47+ | 48.7 грн |
| NXPLQSC30650W6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 30A
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 30A
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
товар відсутній
| BTA204-800E.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BYV29-500.127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
товар відсутній
| BT138-800.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BT137-600.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BT137-800.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| WNSC06650T6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 36A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 36A
Kind of package: reel; tape
товар відсутній
| NXPSC066506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
товар відсутній
| NXPSC06650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 36A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 36A
товар відсутній
| NXPSC06650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 36A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 36A
товар відсутній
| NXPSC06650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 36A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 36A
товар відсутній
| WNSC2D06650DJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Max. forward impulse current: 36A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Max. forward impulse current: 36A
товар відсутній
| WNSC2D06650TJ |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Max. forward impulse current: 36A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Max. forward impulse current: 36A
товар відсутній
| WNSC2D06650XQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Max. forward impulse current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Max. forward impulse current: 30A
товар відсутній