| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SISS30LDN-T1-GE3 | VISHAY |
 SISS30LDN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS32ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 36nC кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS32DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 42nC кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS32LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 57nC кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS40DN-T1-GE3 | VISHAY |
SISS40DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS42DN-T1-GE3 | VISHAY | SISS42DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS42LDN-T1-GE3 | VISHAY |
SISS42LDN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS46DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 14.6mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Drain current: 36.2A Drain-source voltage: 100V Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS50DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 86A; Idm: 300A; 42W Mounting: SMD Polarisation: unipolar Drain-source voltage: 45V Drain current: 86A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Power dissipation: 42W Kind of package: reel; tape Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 300A Case: PowerPAK® 1212-8 кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS5108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 55.9A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 6000 шт |
товару немає в наявності |
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| SISS54DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A Mounting: SMD Pulsed drain current: 300A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 148.5A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 72nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS5808DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Polarisation: unipolar Gate charge: 24nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 66.6A On-state resistance: 11mΩ Type of transistor: N-MOSFET кількість в упаковці: 6000 шт |
товару немає в наявності |
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| SISS588DN-T1-GE3 | VISHAY |
SISS588DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS60DN-T1-GE3 | VISHAY |
SISS60DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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SISS61DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -89.6A Pulsed drain current: -200A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 5939 шт: термін постачання 14-21 дні (днів) |
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| SISS63DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -102A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -102A Pulsed drain current: -200A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 236nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS64DN-T1-GE3 | VISHAY |
SISS64DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS65DN-T1-GE3 | VISHAY |
SISS65DN-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SISS66DN-T1-GE3 | VISHAY |
SISS66DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS67DN-T1-GE3 | VISHAY |
SISS67DN-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SISS70DN-T1-GE3 | VISHAY |
SISS70DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SiSS71DN-T1-GE3 | VISHAY |
SISS71DN-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SISS72DN-T1-GE3 | VISHAY |
SISS72DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS73DN-T1-GE3 | VISHAY |
SISS73DN-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SISS76LDN-T1-GE3 | VISHAY |
SISS76LDN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS78LDN-T1-GE3 | VISHAY |
SISS78LDN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS80DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 169A Pulsed drain current: 300A Power dissipation: 42W Case: PowerPAK® 1212-8 Gate-source voltage: -8...12V On-state resistance: 3mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SISS92DN-T1-GE3 | VISHAY |
SISS92DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SISS94DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A Case: PowerPAK® 1212-8 Mounting: SMD Power dissipation: 42.1W Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape On-state resistance: 78mΩ Drain current: 15.6A Gate charge: 21nC Technology: ThunderFET; TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 200V кількість в упаковці: 1 шт |
товару немає в наявності |
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| SiSS98DN-T1-GE3 | VISHAY |
SISS98DN-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIUD401ED-T1-GE3 | VISHAY |
SIUD401ED-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIUD402ED-T1-GE3 | VISHAY |
SIUD402ED-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SiUD403ED-T1-GE3 | VISHAY |
SIUD403ED-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIUD406ED-T1-GE3 | VISHAY |
SIUD406ED-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SiUD412ED-T1-GE3 | VISHAY |
SIUD412ED-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ200DT-T1-GE3 | VISHAY |
SIZ200DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ240DT-T1-GE3 | VISHAY |
SIZ240DT-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIZ250DT-T1-GE3 | VISHAY |
SIZ250DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ256DT-T1-GE3 | VISHAY |
SIZ256DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ260DT-T1-GE3 | VISHAY |
SIZ260DT-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIZ270DT-T1-GE3 | VISHAY |
SIZ270DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ300DT-T1-GE3 | VISHAY |
SIZ300DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ320DT-T1-GE3 | VISHAY |
SIZ320DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ322DT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 30A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 30A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 9mΩ Mounting: SMD Gate charge: 20.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIZ340ADT-T1-GE3 | VISHAY |
SIZ340ADT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ340BDT-T1-GE3 | VISHAY |
SIZ340BDT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ340DT-T1-GE3 | VISHAY |
SIZ340DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ342ADT-T1-GE3 | VISHAY |
SIZ342ADT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ342DT-T1-GE3 | VISHAY |
SIZ342DT-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIZ346DT-T1-GE3 | VISHAY |
SIZ346DT-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIZ348DT-T1-GE3 | VISHAY |
SIZ348DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ350DT-T1-GE3 | VISHAY |
SIZ350DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ704DT-T1-GE3 | VISHAY |
SIZ704DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ710DT-T1-GE3 | VISHAY |
SIZ710DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ902DT-T1-GE3 | VISHAY |
SIZ902DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ904DT-T1-GE3 | VISHAY |
SIZ904DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ918DT-T1-GE3 | VISHAY |
SIZ918DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ926DT-T1-GE3 | VISHAY |
SIZ926DT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIZ980BDT-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 54.8/197A Pulsed drain current: 90...130A Power dissipation: 20/66W On-state resistance: 7.12/1.72mΩ Mounting: SMD Gate charge: 18/79nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIZ980DT-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20/66W On-state resistance: 10/2.2mΩ Mounting: SMD Gate charge: 18/77nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
| SISS30LDN-T1-GE3 |
|
Виробник: VISHAY
SISS30LDN-T1-GE3 SMD N channel transistors
SISS30LDN-T1-GE3 SMD N channel transistors
товару немає в наявності
| SISS32ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 36nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 36nC
кількість в упаковці: 1 шт
товару немає в наявності
| SISS32DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 42nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 42nC
кількість в упаковці: 1 шт
товару немає в наявності
| SISS32LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 57nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Drain-source voltage: 80V
Drain current: 50.3A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 57nC
кількість в упаковці: 1 шт
товару немає в наявності
| SISS42LDN-T1-GE3 |
|
Виробник: VISHAY
SISS42LDN-T1-GE3 SMD N channel transistors
SISS42LDN-T1-GE3 SMD N channel transistors
товару немає в наявності
| SISS46DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: 36.2A
Drain-source voltage: 100V
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: 36.2A
Drain-source voltage: 100V
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
кількість в упаковці: 1 шт
товару немає в наявності
| SISS50DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 86A; Idm: 300A; 42W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 86A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 300A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 86A; Idm: 300A; 42W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 86A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 300A
Case: PowerPAK® 1212-8
кількість в упаковці: 1 шт
товару немає в наявності
| SISS5108DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Pulsed drain current: 120A
Drain-source voltage: 100V
Drain current: 55.9A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Pulsed drain current: 120A
Drain-source voltage: 100V
Drain current: 55.9A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 6000 шт
товару немає в наявності
| SISS54DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
Pulsed drain current: 300A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 148.5A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
Pulsed drain current: 300A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 148.5A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
кількість в упаковці: 1 шт
товару немає в наявності
| SISS5808DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 6000 шт
товару немає в наявності
| SISS588DN-T1-GE3 |
|
Виробник: VISHAY
SISS588DN-T1-GE3 SMD N channel transistors
SISS588DN-T1-GE3 SMD N channel transistors
товару немає в наявності
| SISS61DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -89.6A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -89.6A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5939 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 72.61 грн |
| 10+ | 61.26 грн |
| 25+ | 46.49 грн |
| 26+ | 40.19 грн |
| 71+ | 37.97 грн |
| 1000+ | 37.61 грн |
| 3000+ | 36.64 грн |
| SISS63DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -102A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -102A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 236nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -102A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -102A
Pulsed drain current: -200A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 236nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SISS76LDN-T1-GE3 |
|
Виробник: VISHAY
SISS76LDN-T1-GE3 SMD N channel transistors
SISS76LDN-T1-GE3 SMD N channel transistors
товару немає в наявності
| SISS78LDN-T1-GE3 |
|
Виробник: VISHAY
SISS78LDN-T1-GE3 SMD N channel transistors
SISS78LDN-T1-GE3 SMD N channel transistors
товару немає в наявності
| SISS80DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 169A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 169A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SISS94DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A
Case: PowerPAK® 1212-8
Mounting: SMD
Power dissipation: 42.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
On-state resistance: 78mΩ
Drain current: 15.6A
Gate charge: 21nC
Technology: ThunderFET; TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 200V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A
Case: PowerPAK® 1212-8
Mounting: SMD
Power dissipation: 42.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
On-state resistance: 78mΩ
Drain current: 15.6A
Gate charge: 21nC
Technology: ThunderFET; TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 200V
кількість в упаковці: 1 шт
товару немає в наявності
| SIUD401ED-T1-GE3 |
|
Виробник: VISHAY
SIUD401ED-T1-GE3 SMD P channel transistors
SIUD401ED-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIUD402ED-T1-GE3 |
|
Виробник: VISHAY
SIUD402ED-T1-GE3 SMD N channel transistors
SIUD402ED-T1-GE3 SMD N channel transistors
товару немає в наявності
| SiUD403ED-T1-GE3 |
|
Виробник: VISHAY
SIUD403ED-T1-GE3 SMD P channel transistors
SIUD403ED-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIUD406ED-T1-GE3 |
|
Виробник: VISHAY
SIUD406ED-T1-GE3 SMD N channel transistors
SIUD406ED-T1-GE3 SMD N channel transistors
товару немає в наявності
| SiUD412ED-T1-GE3 |
|
Виробник: VISHAY
SIUD412ED-T1-GE3 SMD N channel transistors
SIUD412ED-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIZ322DT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 30A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 16.7W
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 30A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 16.7W
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIZ340ADT-T1-GE3 |
|
Виробник: VISHAY
SIZ340ADT-T1-GE3 SMD N channel transistors
SIZ340ADT-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIZ340BDT-T1-GE3 |
|
Виробник: VISHAY
SIZ340BDT-T1-GE3 SMD N channel transistors
SIZ340BDT-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIZ342ADT-T1-GE3 |
|
Виробник: VISHAY
SIZ342ADT-T1-GE3 SMD N channel transistors
SIZ342ADT-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIZ980BDT-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54.8/197A
Pulsed drain current: 90...130A
Power dissipation: 20/66W
On-state resistance: 7.12/1.72mΩ
Mounting: SMD
Gate charge: 18/79nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54.8/197A
Pulsed drain current: 90...130A
Power dissipation: 20/66W
On-state resistance: 7.12/1.72mΩ
Mounting: SMD
Gate charge: 18/79nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIZ980DT-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20/60A
Pulsed drain current: 90...130A
Power dissipation: 20/66W
On-state resistance: 10/2.2mΩ
Mounting: SMD
Gate charge: 18/77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20/60A
Pulsed drain current: 90...130A
Power dissipation: 20/66W
On-state resistance: 10/2.2mΩ
Mounting: SMD
Gate charge: 18/77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності