SISS94DN-T1-GE3 VISHAY
Виробник: VISHAYDescription: VISHAY - SISS94DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 200 V, 19.5 A, 0.061 ohm, PowerPAK 1212-S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 19.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 65.8W
Bauform - Transistor: PowerPAK 1212-S
Anzahl der Pins: 8Pins
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.061ohm
SVHC: To Be Advised
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 38.72 грн |
| 28+ | 29.78 грн |
| 100+ | 22.78 грн |
| 500+ | 21.08 грн |
| 1000+ | 19.39 грн |
| 5000+ | 19.32 грн |
Відгуки про товар
Написати відгук
Технічний опис SISS94DN-T1-GE3 VISHAY
Description: VISHAY - SISS94DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 200 V, 19.5 A, 0.061 ohm, PowerPAK 1212-S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 19.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 65.8W, Bauform - Transistor: PowerPAK 1212-S, Anzahl der Pins: 8Pins, Produktpalette: TrenchFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.061ohm, SVHC: To Be Advised.
Інші пропозиції SISS94DN-T1-GE3 за ціною від 28.13 грн до 68.48 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SISS94DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S |
на замовлення 35986 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| SISS94DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A Case: PowerPAK® 1212-8 Mounting: SMD Power dissipation: 42.1W Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape On-state resistance: 78mΩ Drain current: 15.6A Gate charge: 21nC Technology: ThunderFET; TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 200V кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
 |
SISS94DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
товар відсутній |
|||||||||||||||||
|
|
SISS94DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
товар відсутній |
|||||||||||||||||
| SISS94DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A Case: PowerPAK® 1212-8 Mounting: SMD Power dissipation: 42.1W Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape On-state resistance: 78mΩ Drain current: 15.6A Gate charge: 21nC Technology: ThunderFET; TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 200V |
товар відсутній |