SIZ926DT-T1-GE3 Vishay Semiconductors
на замовлення 690 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.82 грн |
| 10+ | 92.74 грн |
| 100+ | 62.57 грн |
| 500+ | 51.65 грн |
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Технічний опис SIZ926DT-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 25V 40A 8PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.2W, 40W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Інші пропозиції SIZ926DT-T1-GE3
| Фото | Назва | Виробник | Інформація |
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SIZ926DT-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 25V 22A/37A 8-Pin PowerPAIR EP T/R |
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| SIZ926DT-T1-GE3 | Виробник : VISHAY |
SIZ926DT-T1-GE3 SMD N channel transistors |
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SIZ926DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 25V 40A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
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SIZ926DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 25V 40A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
товар відсутній |