SIZ340BDT-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 19.69 грн |
Відгуки про товар
Написати відгук
Технічний опис SIZ340BDT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 69.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 69.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm, Verlustleistung, p-Kanal: 31W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pins, Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 31W, Betriebstemperatur, max.: 150°C, SVHC: To Be Advised.
Інші пропозиції SIZ340BDT-T1-GE3 за ціною від 17.12 грн до 54.63 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIZ340BDT-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
на замовлення 8133 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
SIZ340BDT-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
на замовлення 8133 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
SIZ340BDT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16.9A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
на замовлення 5621 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
SIZ340BDT-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFETs PWRPR N CHAN 30V |
на замовлення 18817 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| SIZ340BDT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 36/69.3A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 36/69.3A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.03/6.7mΩ Mounting: SMD Gate charge: 23.5/12.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
| SIZ340BDT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 36/69.3A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 36/69.3A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.03/6.7mΩ Mounting: SMD Gate charge: 23.5/12.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |