SISS65DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET P-CH 30V 25.9A/94A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.85 грн |
| 6000+ | 20.85 грн |
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Технічний опис SISS65DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 25.9A/94A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V, Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V.
Інші пропозиції SISS65DN-T1-GE3 за ціною від 20.44 грн до 60.16 грн
| Фото | Назва | Виробник | Інформація |
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SISS65DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET -30V Vds -/+20V Vgs PowerPAK 1212-8S |
на замовлення 104412 шт: термін постачання 21-30 дні (днів) |
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SISS65DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 25.9A/94A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V |
на замовлення 8435 шт: термін постачання 21-31 дні (днів) |
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| SISS65DN-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A Mounting: SMD Kind of package: reel; tape Pulsed drain current: -120A Type of transistor: P-MOSFET Power dissipation: 42.1W Polarisation: unipolar Drain current: 75.2A Drain-source voltage: -30V Case: PowerPAK® 1212-8 Gate charge: 138nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 7.5mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| SISS65DN-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A Mounting: SMD Kind of package: reel; tape Pulsed drain current: -120A Type of transistor: P-MOSFET Power dissipation: 42.1W Polarisation: unipolar Drain current: 75.2A Drain-source voltage: -30V Case: PowerPAK® 1212-8 Gate charge: 138nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 7.5mΩ |
товар відсутній |