SISS5108DN-T1-GE3 Vishay / Siliconix
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MOSFETs N-Channel 100-V (D-S) MOSFET PowerPAK 1212-8S, 10.5 mohm a. 10V 10.2 mohm a. 7.5V
на замовлення 2335 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 151.7 грн |
10+ | 115.58 грн |
100+ | 75.21 грн |
500+ | 62.55 грн |
1000+ | 55.31 грн |
3000+ | 50.89 грн |
6000+ | 49.27 грн |
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Технічний опис SISS5108DN-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V.
Інші пропозиції SISS5108DN-T1-GE3 за ціною від 110.41 грн до 177.91 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SISS5108DN-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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SISS5108DN-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 55.9A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 6000 шт |
товар відсутній |
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SISS5108DN-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
товар відсутній |
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SISS5108DN-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 55.9A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |