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SISS32ADN-T1-GE3 Vishay Siliconix
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Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 47.14 грн |
6000+ | 43.69 грн |
9000+ | 42.24 грн |
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Технічний опис SISS32ADN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V.
Інші пропозиції SISS32ADN-T1-GE3 за ціною від 43.86 грн до 104.16 грн
Фото | Назва | Виробник | Інформація |
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SISS32ADN-T1-GE3 | Виробник : Vishay / Siliconix |
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на замовлення 21162 шт: термін постачання 21-30 дні (днів) |
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SISS32ADN-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V |
на замовлення 14476 шт: термін постачання 21-31 дні (днів) |
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SISS32ADN-T1-GE3 | Виробник : Vishay |
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товар відсутній |
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SISS32ADN-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 36nC кількість в упаковці: 1 шт |
товар відсутній |
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SISS32ADN-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerPAK® 1212-8 Drain-source voltage: 80V Drain current: 50.3A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 36nC |
товар відсутній |