SIZ704DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 31.5 грн |
6000+ | 28.89 грн |
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Технічний опис SIZ704DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 6-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W, 30W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A, 16A, Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-PowerPair™.
Інші пропозиції SIZ704DT-T1-GE3 за ціною від 30.24 грн до 76.14 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SIZ704DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 30W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PowerPair™ |
на замовлення 6077 шт: термін постачання 21-31 дні (днів) |
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SIZ704DT-T1-GE3 | Виробник : VISHAY | QFN |
на замовлення 90 шт: термін постачання 14-28 дні (днів) |
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SIZ704DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12/16A Pulsed drain current: 30...40A Power dissipation: 20/30W Gate-source voltage: ±20V On-state resistance: 30/17mΩ Mounting: SMD Gate charge: 12/23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIZ704DT-T1-GE3 | Виробник : Vishay Semiconductors | MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V |
товар відсутній |
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SIZ704DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12/16A Pulsed drain current: 30...40A Power dissipation: 20/30W Gate-source voltage: ±20V On-state resistance: 30/17mΩ Mounting: SMD Gate charge: 12/23nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |