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SiUD403ED-T1-GE3 Vishay / Siliconix
на замовлення 26440 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
15+ | 22.14 грн |
21+ | 15.76 грн |
100+ | 7.45 грн |
1000+ | 4.64 грн |
3000+ | 4.15 грн |
9000+ | 3.87 грн |
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Технічний опис SiUD403ED-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V.
Інші пропозиції SiUD403ED-T1-GE3 за ціною від 6.67 грн до 28.89 грн
Фото | Назва | Виробник | Інформація |
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SiUD403ED-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
на замовлення 5533 шт: термін постачання 21-31 дні (днів) |
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SIUD403ED-T1-GE3 | Виробник : Vishay |
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товар відсутній |
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SiUD403ED-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A On-state resistance: 4.4Ω Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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SiUD403ED-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
товар відсутній |
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SiUD403ED-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A On-state resistance: 4.4Ω Type of transistor: P-MOSFET |
товар відсутній |