| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SBC846BWT1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.2W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 4975 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| BAV19TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 120V; 200mA; Ifsm: 4A; DO35; Ufmax: 1.25V; 50ns Type of diode: switching Mounting: THT Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: DO35 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.1mA Power dissipation: 0.5W |
товар відсутній |
||||||||||||||
 |
SBAV199LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 80nA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 2590 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SBAV199LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 80nA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
товар відсутній |
|||||||||||||
 |
FJPF5027OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 40W; TO220FP Mounting: THT Current gain: 15...30 Collector current: 3A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: tube Case: TO220FP Frequency: 15MHz Collector-emitter voltage: 800V |
товар відсутній |
|||||||||||||
 |
NTK3134NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.64A; 0.45W; SOT723 Kind of package: reel; tape Mounting: SMD Drain current: 0.64A On-state resistance: 1.2Ω Type of transistor: N-MOSFET Power dissipation: 0.45W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±6V Case: SOT723 Drain-source voltage: 20V |
на замовлення 1430 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MC33274ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; SO14; ±1.5÷18VDC,3÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 24MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 10V/μs Operating temperature: -40...85°C Input offset voltage: 1.8mV Voltage supply range: ± 1.5...18V DC; 3...36V DC Kind of package: reel; tape |
на замовлення 2316 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| FDMC86320 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Pulsed drain current: 50A Power dissipation: 40W Gate charge: 41nC Polarisation: unipolar Drain current: 22A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power33 On-state resistance: 18mΩ Gate-source voltage: ±20V Mounting: SMD |
товар відсутній |
||||||||||||||
 |
FDMC86324 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Power dissipation: 41W Gate charge: 18nC Polarisation: unipolar Technology: PowerTrench® Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PQFN8 On-state resistance: 40mΩ Gate-source voltage: ±20V Mounting: SMD |
товар відсутній |
|||||||||||||
| FDMS86320 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Pulsed drain current: 160A Power dissipation: 69W Gate charge: 41nC Polarisation: unipolar Drain current: 44A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power56 On-state resistance: 19mΩ Gate-source voltage: ±20V Mounting: SMD |
товар відсутній |
||||||||||||||
| FDMS86322 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56 Case: Power56 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Power dissipation: 104W Gate charge: 55nC Polarisation: unipolar Drain current: 60A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET On-state resistance: 14mΩ Gate-source voltage: ±20V |
товар відсутній |
||||||||||||||
| 74LCX14BQX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; DQFN14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: DQFN14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
товар відсутній |
||||||||||||||
|
|
74LCX14M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LCX; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of input: with Schmitt trigger |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
74LCX14MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
на замовлення 2497 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
74LCX14MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
товар відсутній |
|||||||||||||
 |
MC74LCX14DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: LCX |
товар відсутній |
|||||||||||||
|
|
MC74LCX14DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
товар відсутній |
|||||||||||||
 |
MC74LCX14DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MC74LCX14DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
товар відсутній |
|||||||||||||
| NCP606MN28T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 2.8V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
товар відсутній |
||||||||||||||
| NCP606MN33T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 3.3V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
товар відсутній |
||||||||||||||
| NCP606MN50T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 5V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
товар відсутній |
||||||||||||||
| NCP606MNADJT2G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...5V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
товар відсутній |
||||||||||||||
 |
BD239CTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
 |
FPF2107 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5 Supply voltage: 1.8...5.5V DC Mounting: SMD Output current: 0.4A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: SOT23-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 125mΩ |
товар відсутній |
|||||||||||||
| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.3A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| CAT24C08HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 400kHz Kind of interface: serial Memory: 8kb EEPROM Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 1024x8bit Access time: 900ns |
товар відсутній |
||||||||||||||
| CAT25010HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 1kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit |
товар відсутній |
||||||||||||||
| CAT25080HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 8kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 1024x8bit |
товар відсутній |
||||||||||||||
| CAT25128HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 128kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns |
товар відсутній |
||||||||||||||
| CAT25160HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 16kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 40ns |
товар відсутній |
||||||||||||||
| CAT25320HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 10MHz Kind of interface: serial Memory: 32kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 4kx8bit Access time: 40ns |
товар відсутній |
||||||||||||||
| CAT25640HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 64kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 40ns |
товар відсутній |
||||||||||||||
| CAT34C02HU4IGT4A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
товар відсутній |
||||||||||||||
| NCP51402MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: -40...125°C Application: for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
товар відсутній |
||||||||||||||
| NCP51403MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
товар відсутній |
||||||||||||||
| NCP51510MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10 Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.5...1.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: -40...125°C Application: for DDR memories Operating voltage: 1.1...3.6/2.7...3.6V |
товар відсутній |
||||||||||||||
| NCV51198PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.675...1.35V Output current: 1.5A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: -40...125°C Application: automotive industry; for DDR memories Operating voltage: 1.35...2.5/2.2...5.5V |
товар відсутній |
||||||||||||||
| NCV51199PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.75...2.5V Output current: 2A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: max. 125°C Application: automotive industry; for DDR memories Operating voltage: 1.5...5.5/4.75...5.5V |
товар відсутній |
||||||||||||||
| NCV51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: automotive industry; for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
товар відсутній |
||||||||||||||
| NCV51400MWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: automotive industry; for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
товар відсутній |
||||||||||||||
| NCV51510MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10 Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.5...1.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: -40...125°C Application: automotive industry; for DDR memories Operating voltage: 1.1...3.6/2.7...3.6V |
товар відсутній |
||||||||||||||
|
|
FCP067N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
| NTH027N65S3F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| NTHL027N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 27.4mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
1SMB5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Zener current: 66.9mA Mounting: SMD Tolerance: ±5% Zener resistance: 2Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 1765 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MCT2EM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Type of optocoupler: optocoupler Collector-emitter voltage: 30V |
на замовлення 492 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MJD127G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 100...12000 Mounting: SMD Kind of package: tube Frequency: 4MHz |
на замовлення 302 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MCT9001 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Collector-emitter voltage: 55V Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 |
товар відсутній |
|||||||||||||
| BAS21M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Leakage current: 0.1mA Power dissipation: 640mW Kind of package: reel; tape |
товар відсутній |
||||||||||||||
|
|
BAS21SLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: double series Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SBAS21DW5T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
товар відсутній |
||||||||||||||
| SBAS21DW5T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
товар відсутній |
||||||||||||||
 |
NSVBAS21HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товар відсутній |
|||||||||||||
|
|
MC33204DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2.2MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1V/μs Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Integrated circuit features: rail-to-rail Kind of package: reel; tape |
товар відсутній |
|||||||||||||
 |
KSC2383YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92L Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
товар відсутній |
|||||||||||||
| NRVUD320VT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A Mounting: SMD Application: automotive industry Max. forward impulse current: 75A Max. forward voltage: 0.95V Max. off-state voltage: 200V Load current: 3A Max. load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: DPAK Type of diode: rectifying Reverse recovery time: 35ns |
товар відсутній |
||||||||||||||
| 74ALVC16245MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 16 Supply voltage: 1.65...3.6V DC Mounting: SMD Case: TSSOP48 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Quiescent current: 40µA |
товар відсутній |
||||||||||||||
 |
MC78M05CDTRKG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC78M00 |
товар відсутній |
| SBC846BWT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 4975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.44 грн |
| 150+ | 2.58 грн |
| 500+ | 2.17 грн |
| 575+ | 1.5 грн |
| 1575+ | 1.41 грн |
| BAV19TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 120V; 200mA; Ifsm: 4A; DO35; Ufmax: 1.25V; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO35
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.1mA
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 120V; 200mA; Ifsm: 4A; DO35; Ufmax: 1.25V; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO35
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.1mA
Power dissipation: 0.5W
товар відсутній
| SBAV199LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 2590 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.32 грн |
| 45+ | 8.42 грн |
| 100+ | 7.55 грн |
| 140+ | 6.13 грн |
| 385+ | 5.79 грн |
| SBAV199LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| FJPF5027OTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 40W; TO220FP
Mounting: THT
Current gain: 15...30
Collector current: 3A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Frequency: 15MHz
Collector-emitter voltage: 800V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 40W; TO220FP
Mounting: THT
Current gain: 15...30
Collector current: 3A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Frequency: 15MHz
Collector-emitter voltage: 800V
товар відсутній
| NTK3134NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.64A; 0.45W; SOT723
Kind of package: reel; tape
Mounting: SMD
Drain current: 0.64A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±6V
Case: SOT723
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.64A; 0.45W; SOT723
Kind of package: reel; tape
Mounting: SMD
Drain current: 0.64A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±6V
Case: SOT723
Drain-source voltage: 20V
на замовлення 1430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 30+ | 13.79 грн |
| 75+ | 11.58 грн |
| 205+ | 10.95 грн |
| MC33274ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; SO14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; SO14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
на замовлення 2316 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.71 грн |
| 8+ | 45.44 грн |
| 25+ | 34.99 грн |
| 67+ | 33.1 грн |
| FDMC86320 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Pulsed drain current: 50A
Power dissipation: 40W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power33
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Pulsed drain current: 50A
Power dissipation: 40W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power33
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Mounting: SMD
товар відсутній
| FDMC86324 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Power dissipation: 41W
Gate charge: 18nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Power dissipation: 41W
Gate charge: 18nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Mounting: SMD
товар відсутній
| FDMS86320 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56
Pulsed drain current: 160A
Power dissipation: 69W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power56
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56
Pulsed drain current: 160A
Power dissipation: 69W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power56
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Mounting: SMD
товар відсутній
| FDMS86322 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Power dissipation: 104W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Power dissipation: 104W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
On-state resistance: 14mΩ
Gate-source voltage: ±20V
товар відсутній
| 74LCX14BQX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; DQFN14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: DQFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; DQFN14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: DQFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
товар відсутній
| 74LCX14M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LCX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LCX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.88 грн |
| 15+ | 24.32 грн |
| 74LCX14MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
на замовлення 2497 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.94 грн |
| 15+ | 24.83 грн |
| 37+ | 22.9 грн |
| 50+ | 22.87 грн |
| 102+ | 21.66 грн |
| 300+ | 20.83 грн |
| 74LCX14MX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| MC74LCX14DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| MC74LCX14DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| MC74LCX14DTG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
на замовлення 316 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.29 грн |
| 10+ | 42.76 грн |
| 33+ | 25.86 грн |
| 91+ | 24.45 грн |
| MC74LCX14DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| NCP606MN28T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.8V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.8V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| NCP606MN33T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| NCP606MN50T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| NCP606MNADJT2G |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| BD239CTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
товар відсутній
| FPF2107 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Output current: 0.4A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 125mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Output current: 0.4A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 125mΩ
товар відсутній
| FCH125N65S3R0-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH165N65S3R0-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| CAT24C08HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Access time: 900ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Access time: 900ns
товар відсутній
| CAT25010HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
товар відсутній
| CAT25080HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 1024x8bit
товар відсутній
| CAT25128HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 128kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 128kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
товар відсутній
| CAT25160HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 16kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 16kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
товар відсутній
| CAT25320HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 10MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 10MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Access time: 40ns
товар відсутній
| CAT25640HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 64kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 64kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
товар відсутній
| CAT34C02HU4IGT4A |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NCP51402MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
товар відсутній
| NCP51403MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
товар відсутній
| NCP51510MNTAG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
товар відсутній
| NCV51198PDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
товар відсутній
| NCV51199PDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V
товар відсутній
| NCV51400MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
товар відсутній
| NCV51400MWTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
товар відсутній
| NCV51510MNTAG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
товар відсутній
| FCP067N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTH027N65S3F-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL027N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 1SMB5919BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Zener current: 66.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 2Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Zener current: 66.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 2Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 1765 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.57 грн |
| 40+ | 10.16 грн |
| 100+ | 8.42 грн |
| 110+ | 7.7 грн |
| 305+ | 7.26 грн |
| MCT2EM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 30V
на замовлення 492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.75 грн |
| 19+ | 19.53 грн |
| 50+ | 17.28 грн |
| 58+ | 14.37 грн |
| 160+ | 13.58 грн |
| MJD127G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
на замовлення 302 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 53.28 грн |
| 22+ | 40.65 грн |
| 58+ | 38.48 грн |
| 75+ | 37.75 грн |
| MCT9001 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Collector-emitter voltage: 55V
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Collector-emitter voltage: 55V
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
товар відсутній
| BAS21M3T5G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Leakage current: 0.1mA
Power dissipation: 640mW
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Leakage current: 0.1mA
Power dissipation: 640mW
Kind of package: reel; tape
товар відсутній
| BAS21SLT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 3.4 грн |
| 135+ | 2.9 грн |
| SBAS21DW5T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SBAS21DW5T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| NSVBAS21HT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| MC33204DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
товар відсутній
| KSC2383YTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92L
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92L
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
товар відсутній
| NRVUD320VT4G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Application: automotive industry
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Application: automotive industry
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
товар відсутній
| 74ALVC16245MTDX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 40µA
товар відсутній
| MC78M05CDTRKG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
товар відсутній