| Фото | Назва | Виробник | Інформація |
Доступність |
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| NSR201MXT5G | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 1330 шт: термін постачання 21-30 дні (днів) |
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FDH047AN08A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 138nC Kind of package: tube Kind of channel: enhanced |
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| NCP3237MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷16V; Uout: 0.6÷12V; QFN18; buck Type of integrated circuit: PMIC Input voltage: 4.5...16V Output voltage: 0.6...12V Output current: 8A Case: QFN18 Mounting: SMD Frequency: 495...605kHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
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BZX84C68LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 68V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 2924 шт: термін постачання 21-30 дні (днів) |
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| MMBTA13 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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| FDMS7670 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 150A Power dissipation: 62W Case: Power56 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
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MC74VHCT50ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Mounting: SMD Case: TSSOP14 Manufacturer series: VHCT Supply voltage: 2...5.5V DC Operating temperature: -40...125°C |
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GBU6M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 773 шт: термін постачання 21-30 дні (днів) |
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MMSZ5237BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1118 шт: термін постачання 21-30 дні (днів) |
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MMBTA06 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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| 1N4937RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
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MPSA42 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
на замовлення 6263 шт: термін постачання 21-30 дні (днів) |
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MMBTA92 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
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| FGH4L40T120LQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
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| TL431IDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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| FDMC86520DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 73W; PQFN8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PQFN8 Drain-source voltage: 60V Drain current: 40A On-state resistance: 10.2mΩ |
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GBU8M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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SBAV99RWT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SC70 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M Mounting: THT Manufacturer series: MOC3063M Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Type of optocoupler: optotriac |
на замовлення 643 шт: термін постачання 21-30 дні (днів) |
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| MMSZ5241B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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| NCP511SN50T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,fixed; 5V; 0.15A; TSOP5; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 75mV Output voltage: 5V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...6V Manufacturer series: NCP511 |
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NTF5P03T3G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Power dissipation: 3.13W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NTR1P02LT3G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NVTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| NTTFS5116PLTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; 20W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -14A Power dissipation: 20W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Power dissipation: 5W Kind of package: reel; tape |
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FDS8928A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-20V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-20V Drain current: 5.5/4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±8V On-state resistance: 38/72mΩ Mounting: SMD Gate charge: 28/28nC Kind of package: reel; tape Kind of channel: enhanced |
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MMSZ5260BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 547 шт: термін постачання 21-30 дні (днів) |
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BC547B | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Frequency: 300MHz |
на замовлення 2275 шт: термін постачання 21-30 дні (днів) |
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| NCP177AMX120TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 0.5A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.6...5.5V Manufacturer series: NCP177 |
товар відсутній |
| NSR201MXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 1330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 141+ | 18.84 грн |
| FDH047AN08A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP3237MNTXG |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷16V; Uout: 0.6÷12V; QFN18; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...16V
Output voltage: 0.6...12V
Output current: 8A
Case: QFN18
Mounting: SMD
Frequency: 495...605kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷16V; Uout: 0.6÷12V; QFN18; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...16V
Output voltage: 0.6...12V
Output current: 8A
Case: QFN18
Mounting: SMD
Frequency: 495...605kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
товар відсутній
| BZX84C68LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 68V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 68V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 2924 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.47 грн |
| 100+ | 4.57 грн |
| 250+ | 3.67 грн |
| 650+ | 3.47 грн |
| MMBTA13 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
| FDMS7670 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 62W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 62W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC74VHCT50ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
товар відсутній
| GBU6M |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 773 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.74 грн |
| 6+ | 66.06 грн |
| 16+ | 55.9 грн |
| 42+ | 52.99 грн |
| MMSZ5237BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 8.6 грн |
| 59+ | 6.17 грн |
| 94+ | 3.89 грн |
| 131+ | 2.78 грн |
| 250+ | 2.33 грн |
| 500+ | 2.1 грн |
| 525+ | 1.62 грн |
| MMBTA06 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| 1N4937RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
товар відсутній
| MPSA42 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
на замовлення 6263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 19+ | 19.82 грн |
| 21+ | 17.71 грн |
| 27+ | 13.79 грн |
| 100+ | 8.28 грн |
| 141+ | 6.03 грн |
| 389+ | 5.74 грн |
| 2500+ | 5.52 грн |
| MMBTA92 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FGY140T120SWD |
|
товар відсутній
| FGH4L40T120LQD |
|
товар відсутній
| TL431IDR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товар відсутній
| FDMC86520DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 73W; PQFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PQFN8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 10.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 73W; PQFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PQFN8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 10.2mΩ
товар відсутній
| GBU8M |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| SBAV99RWT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SC70
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SC70
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| MOC3063M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Mounting: THT
Manufacturer series: MOC3063M
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Mounting: THT
Manufacturer series: MOC3063M
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Type of optocoupler: optotriac
на замовлення 643 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.63 грн |
| 10+ | 39.35 грн |
| 27+ | 31.8 грн |
| 74+ | 30.05 грн |
| 500+ | 28.97 грн |
| MMSZ5241B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| NCP511SN50T1G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.15A; TSOP5; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 75mV
Output voltage: 5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.15A; TSOP5; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 75mV
Output voltage: 5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...6V
Manufacturer series: NCP511
товар відсутній
| NTF5P03T3G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 3.13W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 3.13W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTR1P02LT3G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NVTR4502PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTTFS5116PLTAG |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; 20W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Power dissipation: 20W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; 20W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Power dissipation: 20W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SB540 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Power dissipation: 5W
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Power dissipation: 5W
Kind of package: reel; tape
товар відсутній
| FDS8928A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-20V
Drain current: 5.5/4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 38/72mΩ
Mounting: SMD
Gate charge: 28/28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-20V
Drain current: 5.5/4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 38/72mΩ
Mounting: SMD
Gate charge: 28/28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMSZ5260BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 547 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.82 грн |
| 61+ | 5.95 грн |
| 81+ | 4.53 грн |
| 138+ | 2.64 грн |
| 503+ | 1.7 грн |
| BC547B |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.24 грн |
| 23+ | 16.12 грн |
| 100+ | 7.91 грн |
| 168+ | 5.09 грн |
| 461+ | 4.81 грн |
| NCP177AMX120TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: NCP177
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: NCP177
товар відсутній