Технічний опис APTM20DUM04G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor,common source; 200V; 278A; SP6C, Type of module: MOSFET transistor, Semiconductor structure: common source; transistor/transistor, Drain-source voltage: 200V, Drain current: 278A, Case: SP6C, Topology: MOSFET x2, Electrical mounting: FASTON connectors; screw, On-state resistance: 5mΩ, Pulsed drain current: 1488A, Power dissipation: 1.25kW, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTM20DUM04G
Фото | Назва | Виробник | Інформація |
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APTM20DUM04G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 278A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APTM20DUM04G | Виробник : Microchip Technology |
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APTM20DUM04G | Виробник : Microchip / Microsemi |
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APTM20DUM04G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor,common source; 200V; 278A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |