Технічний опис APTM20SKM04G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper, Case: SP6C, Power dissipation: 1.25kW, Semiconductor structure: diode/transistor, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: buck chopper, Technology: POWER MOS 7®, Pulsed drain current: 1488A, Gate-source voltage: ±30V, Type of module: MOSFET transistor, Drain-source voltage: 200V, Drain current: 278A, On-state resistance: 5mΩ.
Інші пропозиції APTM20SKM04G
Фото | Назва | Виробник | Інформація |
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APTM20SKM04G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper Case: SP6C Power dissipation: 1.25kW Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: buck chopper Technology: POWER MOS 7® Pulsed drain current: 1488A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ |
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APTM20SKM04G | Виробник : MICROSEMI |
![]() кількість в упаковці: 1 шт |
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APTM20SKM04G | Виробник : Microchip Technology |
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APTM20SKM04G | Виробник : Microchip / Microsemi |
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APTM20SKM04G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper Case: SP6C Power dissipation: 1.25kW Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: buck chopper Technology: POWER MOS 7® Pulsed drain current: 1488A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ |
товар відсутній |