APTM50DAM17G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: boost chopper
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: boost chopper
кількість в упаковці: 1 шт
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Технічний опис APTM50DAM17G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw, Pulsed drain current: 720A, Power dissipation: 1.25kW, Technology: POWER MOS 7®, Drain current: 135A, Drain-source voltage: 500V, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Type of module: MOSFET transistor, Semiconductor structure: diode/transistor, Case: SP6C, On-state resistance: 20mΩ, Topology: boost chopper, кількість в упаковці: 1 шт.
Інші пропозиції APTM50DAM17G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTM50DAM17G | Виробник : Microchip Technology | Description: MOSFET N-CH 500V 180A SP6 |
товар відсутній |
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APTM50DAM17G | Виробник : Microsemi | Discrete Semiconductor Modules Power Module - Mosfet |
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APTM50DAM17G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw Pulsed drain current: 720A Power dissipation: 1.25kW Technology: POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 20mΩ Topology: boost chopper |
товар відсутній |