Технічний опис APTM20DUM08TG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor,common source; 200V; 155A; SP4, On-state resistance: 10mΩ, Drain current: 155A, Drain-source voltage: 200V, Semiconductor structure: common source; transistor/transistor, Power dissipation: 781W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Case: SP4, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET x2; NTC thermistor, Pulsed drain current: 832A, кількість в упаковці: 1 шт.
Інші пропозиції APTM20DUM08TG
| Фото | Назва | Виробник | Інформація |
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| APTM20DUM08TG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor,common source; 200V; 155A; SP4 On-state resistance: 10mΩ Drain current: 155A Drain-source voltage: 200V Semiconductor structure: common source; transistor/transistor Power dissipation: 781W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP4 Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x2; NTC thermistor Pulsed drain current: 832A кількість в упаковці: 1 шт |
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| APTM20DUM08TG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 200V 208A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Active |
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| APTM20DUM08TG | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC4087 |
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| APTM20DUM08TG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 155A; SP4 On-state resistance: 10mΩ Drain current: 155A Drain-source voltage: 200V Semiconductor structure: common source; transistor/transistor Power dissipation: 781W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP4 Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x2; NTC thermistor Pulsed drain current: 832A |
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